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Simulation Study of the Double-Gate Tunnel Field-Effect Transistor with Step Channel Thickness

Nanoscale research letters, 2020-06, Vol.15 (1), p.128-128, Article 128

2020

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A normally off high-voltage InGaZnO transistor with drain offset region modulated by an InZnO layer

Applied physics letters, 2024-08, Vol.125 (6)

2024

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Variation of Lateral Width Technique in SoI High-Voltage Lateral Double-Diffused Metal-Oxide-Semiconductor Transistors Using High-k Dielectric

IEEE electron device letters, 2015-03, Vol.36 (3), p.262-264

2015

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β-Ga2O3-Based Power Devices: A Concise Review

Crystals (Basel), 2022-03, Vol.12 (3), p.406

2022

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Automatic optimal design of field plate for silicon on insulator lateral double‐diffused metal oxide semiconductor using simulated annealing algorithm

IET power electronics, 2024-03, Vol.17 (4), p.487-493

2024

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Investigations of 4H‐SiC trench MOSFET with integrated high‐K deep trench and gate dielectric

IET power electronics, 2024-05, Vol.17 (7), p.869-877

2024

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Breakdown Characteristics of Ga2O3-on-SiC Metal-Oxide-Semiconductor Field-Effect Transistors

Crystals (Basel), 2023-06, Vol.13 (6), p.917

2023

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SiC-on-insulator based lateral power device and it’ s analytical models

Results in physics, 2024-03, Vol.58, p.107477, Article 107477

2024

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Extraction of Interface-Trap Densities of the Stacked Bonding Structure in 3D Integration Using High-Frequency Capacitance-Voltage Technique

Micromachines (Basel), 2022-02, Vol.13 (2), p.262

2022

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Prediction of Static Characteristic Parameters of an Insulated Gate Bipolar Transistor Using Artificial Neural Network

Micromachines (Basel), 2021-12, Vol.13 (1), p.4

2021

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Double dielectrics enhancement on the LDMOS using high-k field dielectric and low-k buried dielectric

Results in physics, 2022-07, Vol.38, p.105599, Article 105599

2022

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Off-State Performance Characterization of an AlGaN/GaN Device via Artificial Neural Networks

Micromachines (Basel), 2022-05, Vol.13 (5), p.737

2022

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A Novel Step–Doped Channel AlGaN/GaN HEMTs with Improved Breakdown Performance

Micromachines (Basel), 2021-10, Vol.12 (10), p.1244

2021

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Impact Ionization Coefficient Prediction of a Lateral Power Device Using Deep Neural Network

Micromachines (Basel), 2023-02, Vol.14 (3), p.522

2023

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The role of even longitudinal electric field distribution in optimizing carrier transport efficiency of field-effect transistors

Results in physics, 2022-09, Vol.40, p.105788, Article 105788

2022

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The Drift Region Width Modulation Technique for Breakdown Performance Enhancement of AlGaN/GaN HEMT

IEEE journal of the Electron Devices Society, 2022, Vol.10, p.1-1

2022

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A 121 A/cm2 High Current Density Copolymer OSC-Based Thin-Film Power OFET With 300 V Off-State Breakdown Voltage

IEEE journal of the Electron Devices Society, 2023, Vol.11, p.579-585

2023

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An Analytical Breakdown Model for the SOI LDMOS With Arbitrary Drift Doping Profile by Using Effective Substrate Voltage Method

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.49-56

2020

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Equivalent model and limit for the SOI lateral power device using high-k dielectric

Results in physics, 2019-12, Vol.15, p.102570, Article 102570

2019

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Numerical Analysis of the LDMOS With Side Triangular Field Plate

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.1055-1062

2019

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Analytical Study on the Breakdown Characteristics of Si-Substrated AlGaN/GaN HEMTs With Field Plates

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.1031-1038

2020

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Analytical model for silicon-on-insulator lateral high-voltage devices using variation of lateral thickness technique

Japanese Journal of Applied Physics, 2015-02, Vol.54 (2), p.24301-1-024301-6

2015

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Suppression of Peak Noise Caused by Time Delay of the Anti- Noise Source

Energy procedia, 2012, Vol.16, p.86-90

2012

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An Efficient Breakdown Characterization for D/T-RESURF SOI LDMOS Using Important Structure Parameters Selection Technique

IEEE transactions on electron devices, 2024-05, Vol.71 (5), p.2869-2875

2024

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Novel Bulk Silicon Lateral Double-Diffused Metal--Oxide--Semiconductor Field-Effect Transistors Using Step Thickness Technology in Drift Region

Japanese Journal of Applied Physics, 2013-12, Vol.52 (12), p.124301-124301-6

2013

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Simulation Study of the Double-Gate Tunnel Field-Effect Transistor with Step Channel Thickness

A normally off high-voltage InGaZnO transistor with drain offset region modulated by an InZnO layer

Variation of Lateral Width Technique in SoI High-Voltage Lateral Double-Diffused Metal-Oxide-Semiconductor Transistors Using High-k Dielectric

β-Ga2O3-Based Power Devices: A Concise Review

Automatic optimal design of field plate for silicon on insulator lateral double‐diffused metal oxide semiconductor using simulated annealing algorithm

Investigations of 4H‐SiC trench MOSFET with integrated high‐K deep trench and gate dielectric

Breakdown Characteristics of Ga2O3-on-SiC Metal-Oxide-Semiconductor Field-Effect Transistors

SiC-on-insulator based lateral power device and it’ s analytical models

Extraction of Interface-Trap Densities of the Stacked Bonding Structure in 3D Integration Using High-Frequency Capacitance-Voltage Technique

Prediction of Static Characteristic Parameters of an Insulated Gate Bipolar Transistor Using Artificial Neural Network

Double dielectrics enhancement on the LDMOS using high-k field dielectric and low-k buried dielectric

Off-State Performance Characterization of an AlGaN/GaN Device via Artificial Neural Networks

A Novel Step–Doped Channel AlGaN/GaN HEMTs with Improved Breakdown Performance

Impact Ionization Coefficient Prediction of a Lateral Power Device Using Deep Neural Network

The role of even longitudinal electric field distribution in optimizing carrier transport efficiency of field-effect transistors

The Drift Region Width Modulation Technique for Breakdown Performance Enhancement of AlGaN/GaN HEMT

A 121 A/cm2 High Current Density Copolymer OSC-Based Thin-Film Power OFET With 300 V Off-State Breakdown Voltage

An Analytical Breakdown Model for the SOI LDMOS With Arbitrary Drift Doping Profile by Using Effective Substrate Voltage Method

Equivalent model and limit for the SOI lateral power device using high-k dielectric

Numerical Analysis of the LDMOS With Side Triangular Field Plate

Analytical Study on the Breakdown Characteristics of Si-Substrated AlGaN/GaN HEMTs With Field Plates

Analytical model for silicon-on-insulator lateral high-voltage devices using variation of lateral thickness technique

Suppression of Peak Noise Caused by Time Delay of the Anti- Noise Source

An Efficient Breakdown Characterization for D/T-RESURF SOI LDMOS Using Important Structure Parameters Selection Technique

Novel Bulk Silicon Lateral Double-Diffused Metal--Oxide--Semiconductor Field-Effect Transistors Using Step Thickness Technology in Drift Region

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