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P‑type Doping in Large-Area Monolayer MoS2 by Chemical Vapor Deposition

ACS applied materials & interfaces, 2020-02, Vol.12 (5), p.6276-6282

2020

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Stacking the MoS2/GeSe2 vertical van der Waals heterostructure for memory device

Applied physics letters, 2020-10, Vol.117 (15)

2020

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Measuring the Berry phase in a superconducting phase qubit by a shortcut to adiabaticity

Physical review. A, 2017-04, Vol.95 (4), Article 042345

2017

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Resistive memory based on single-crystalline black phosphorus flake/HfOx structure

AIP advances, 2020-07, Vol.10 (7), p.075013-075013-7

2020

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Design and build MoS2/Au/MoS2 sandwich structure to significantly enhance the photoluminescence

AIP advances, 2019-09, Vol.9 (9), p.095305-095305-7

2019

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Preparation of black phosphorus quantum dots and the surface decoration effect on the monolayer MoS2 photodetectors

Chemical physics letters, 2021-06, Vol.772, p.138571, Article 138571

2021

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Self-powered and high responsivity photodetector based on a n-Si/p-GaTe heterojunction

Nanotechnology, 2021-05, Vol.32 (22), p.225204

2021

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HfO2-passivated black phosphorus field effect transistor with long-termed stability and enhanced current on/off ratio

Nanotechnology, 2019-08, Vol.30 (34), p.345208-345208

2019

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Synthesis and electrical properties of single crystalline black phosphorus nanoribbons

CrystEngComm, 2020-06, Vol.22 (22), p.3824-383

2020

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Photoluminescence enhancement by stacking bi-layer MoS2 without interlayer coupling

Journal of luminescence, 2019-09, Vol.213, p.388-394

2019

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Improvement in the quality of black phosphorus by selecting a mineralizer

Nanoscale, 2019-11, Vol.11 (42), p.281-289

2019

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Single crystal growth of bulk SnS2 and high yield preparation of few-layer SnS2

Journal of crystal growth, 2020-04, Vol.535, p.125538, Article 125538

2020

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N-type doping of black phosphorus single crystal by tellurium

Nanotechnology, 2020-07, Vol.31 (31), p.315605-315605

2020

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Readout electronics for thermal neutron detector array

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2019-12, Vol.946, p.162639, Article 162639

2019

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Design of a two-layer structure to significantly improve the performance of zinc oxide resistive memory

Nanotechnology, 2020-03, Vol.31 (11), p.115209-115209

2020

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P-type Doping in Large-Area Monolayer MoS 2 by Chemical Vapor Deposition

ACS applied materials & interfaces, 2020-02, Vol.12 (5), p.6276-6282

2020

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HfO 2 -passivated black phosphorus field effect transistor with long-termed stability and enhanced current on/off ratio

Nanotechnology, 2019-08, Vol.30 (34), p.345208

2019

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Surface charge transfer doping and effective passivation of black phosphorus field effect transistors

Journal of materials chemistry. C, Materials for optical and electronic devices, 2020-05, Vol.8 (19), p.6595-664

2020

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Highly Sensitive Photodetector Based on the n‑Si/p-GaSe Vertical Heterojunction

ACS applied nano materials, 2022-06, Vol.5 (6), p.8012-8019

2022

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Gate induced charge transfer and hysteresis enlargement in MoS2/GeSe2 vertical heterostructures

Journal of materials chemistry. C, Materials for optical and electronic devices, 2021-07, Vol.9 (26), p.8213-8219

2021

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Enhanced performance of a n-Si/p-GaTe heterojunction through interfacial passivation and thermal oxidation

Journal of materials chemistry. C, Materials for optical and electronic devices, 2022-08, Vol.1 (32), p.11747-11754

2022

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Gate induced charge transfer and hysteresis enlargement in MoS 2 /GeSe 2 vertical heterostructures

Journal of materials chemistry. C, Materials for optical and electronic devices, 2021-07, Vol.9 (26), p.8213-8219

2021

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Gate induced charge transfer and hysteresis enlargement in MoS/GeSe vertical heterostructures

Journal of materials chemistry. C, Materials for optical and electronic devices, 2021-07, Vol.9 (26), p.8213-8219

2021

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Air stable and reversible n-type surface functionalization of MoS2 monolayer using Arg and Lys amino acids

Journal of materials chemistry. C, Materials for optical and electronic devices, 2020-01, Vol.8 (35), p.12181-12188

2020

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Air stable and reversible n-type surface functionalization of MoS monolayer using Arg and Lys amino acids

Journal of materials chemistry. C, Materials for optical and electronic devices, 2020-09, Vol.8 (35), p.12181-12188

2020

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P‑type Doping in Large-Area Monolayer MoS2 by Chemical Vapor Deposition

Stacking the MoS2/GeSe2 vertical van der Waals heterostructure for memory device

Measuring the Berry phase in a superconducting phase qubit by a shortcut to adiabaticity

Resistive memory based on single-crystalline black phosphorus flake/HfOx structure

Design and build MoS2/Au/MoS2 sandwich structure to significantly enhance the photoluminescence

Preparation of black phosphorus quantum dots and the surface decoration effect on the monolayer MoS2 photodetectors

Self-powered and high responsivity photodetector based on a n-Si/p-GaTe heterojunction

HfO2-passivated black phosphorus field effect transistor with long-termed stability and enhanced current on/off ratio

Synthesis and electrical properties of single crystalline black phosphorus nanoribbons

Photoluminescence enhancement by stacking bi-layer MoS2 without interlayer coupling

Improvement in the quality of black phosphorus by selecting a mineralizer

Single crystal growth of bulk SnS2 and high yield preparation of few-layer SnS2

N-type doping of black phosphorus single crystal by tellurium

Readout electronics for thermal neutron detector array

Design of a two-layer structure to significantly improve the performance of zinc oxide resistive memory

P-type Doping in Large-Area Monolayer MoS 2 by Chemical Vapor Deposition

HfO 2 -passivated black phosphorus field effect transistor with long-termed stability and enhanced current on/off ratio

Surface charge transfer doping and effective passivation of black phosphorus field effect transistors

Highly Sensitive Photodetector Based on the n‑Si/p-GaSe Vertical Heterojunction

Gate induced charge transfer and hysteresis enlargement in MoS2/GeSe2 vertical heterostructures

Enhanced performance of a n-Si/p-GaTe heterojunction through interfacial passivation and thermal oxidation

Gate induced charge transfer and hysteresis enlargement in MoS 2 /GeSe 2 vertical heterostructures

Gate induced charge transfer and hysteresis enlargement in MoS/GeSe vertical heterostructures

Air stable and reversible n-type surface functionalization of MoS2 monolayer using Arg and Lys amino acids

Air stable and reversible n-type surface functionalization of MoS monolayer using Arg and Lys amino acids

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