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Light emission and charge trapping in Er-doped silicon dioxide films containing silicon nanocrystals

Applied physics letters, 2005-04, Vol.86 (15), p.151914-151914-3

2005

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Reactive plasma immersion ion implantation for surface passivation

Surface & coatings technology, 2007-04, Vol.201 (15), p.6752-6758

2007

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Strong blue and violet photoluminescence and electroluminescence from germanium-implanted and silicon-implanted silicon-dioxide layers

Applied physics letters, 1997-11, Vol.71 (19), p.2809-2811

1997

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Microarrays of silicon-based light emitters for novel biosensor and lab-on-a-chip applications

Optical materials, 2005-02, Vol.27 (5), p.1055-1058

2005

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Surface protection of titanium and titanium–aluminum alloys against environmental degradation at elevated temperatures

Surface & coatings technology, 2012-04, Vol.206 (17), p.3595-3600

2012

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Quenching of electroluminescence and charge trapping in high-efficiency Ge-implanted MOS light-emitting silicon diodes

Applied physics. B, Lasers and optics, 2007-03, Vol.87 (1), p.129-134

2007

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Room-temperature, short-wavelength (400–500 nm) photoluminescence from silicon-implanted silicon dioxide films

Applied physics letters, 1996-04, Vol.68 (17), p.2410-2412

1996

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Formation of light-emitting Si nanostructures in SiO2 by pulsed anneals

Nanotechnology, 2008-09, Vol.19 (35), p.355305-355305 (5)

2008

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Formation of nanoscale voids and related metallic impurity gettering in high-energy ion-implanted and annealed epitaxial silicon

Applied physics letters, 2003-08, Vol.83 (7), p.1367-1369

2003

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Carbon-mediated effects in silicon and in silicon-related materials

Materials chemistry and physics, 1996-05, Vol.44 (2), p.101-143

1996

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The effect of radio-frequency plasma treatment on the electroluminescent properties of violet light-emitting germanium implanted metal-oxide–semiconductor structures

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-12, Vol.124, p.458-461

2005

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Charge trapping phenomena in high-efficiency metal-oxide-silicon light-emitting diodes with ion-implanted oxide

Journal of luminescence, 2006-12, Vol.121 (2), p.213-216

2006

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Damage in silicon carbide induced by Rutherford backscattering analysis

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1998-08, Vol.142 (4), p.561-570

1998

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Effect of elevated substrate temperature on growth, properties, and structure of indium tin oxide films prepared by reactive magnetron sputtering

Journal of materials research, 2007-08, Vol.22 (8), p.2319-2329

2007

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Wave-ordered structures formed on SOI wafers by reactive ion beams

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1999, Vol.147 (1), p.310-315

1999

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Defects remaining in MeV-ion-implanted and annealed Si away from the peak of the nuclear energy deposition profile

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1999, Vol.147 (1), p.96-100

1999

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Trans-projected-range effect in proximity gettering of impurities in silicon

Vacuum, 2001-06, Vol.62 (2), p.309-313

2001

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Comparative Study of SIMOX Structures Using Four Analytical Techniques

Surface and interface analysis, 1996-04, Vol.24 (4), p.243-251

1996

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Modelling high-temperature co-implantation of N + and Al + ions in silicon carbide: the effect of stress on the implant and damage distributions

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1999, Vol.147 (1), p.279-285

1999

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Advanced thermal processing of semiconductor materials in the millisecond range

Vacuum, 2005-05, Vol.78 (2), p.673-677

2005

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Cross-Sectional Micro-Raman Spectroscopy: A Tool for Structural Investigations of Thin Polytypic SiC Layers

Materials science forum, 1998-01, Vol.264-268, p.661-664

1998

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Optical transitions in Ge nanocrystals formed by high-pressure annealing of Ge+ ion implanted SiO2 films

Solid state communications, 2004-01, Vol.129 (1), p.63-68

2004

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Overpressurized bubbles versus voids formed in helium implanted and annealed silicon

Applied physics letters, 1997-02, Vol.70 (6), p.732-734

1997

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(AlN) x(SiC) 1− x buried layers implanted in 6H–SiC: a theoretical study of their optimized composition

Applied surface science, 2001-12, Vol.184 (1), p.383-386

2001

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The effects of the annealing temperature on the formation of helium-filled structures in silicon

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1999, Vol.148 (1), p.329-333

1999

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Light emission and charge trapping in Er-doped silicon dioxide films containing silicon nanocrystals

Reactive plasma immersion ion implantation for surface passivation

Strong blue and violet photoluminescence and electroluminescence from germanium-implanted and silicon-implanted silicon-dioxide layers

Microarrays of silicon-based light emitters for novel biosensor and lab-on-a-chip applications

Surface protection of titanium and titanium–aluminum alloys against environmental degradation at elevated temperatures

Quenching of electroluminescence and charge trapping in high-efficiency Ge-implanted MOS light-emitting silicon diodes

Room-temperature, short-wavelength (400–500 nm) photoluminescence from silicon-implanted silicon dioxide films

Formation of light-emitting Si nanostructures in SiO2 by pulsed anneals

Formation of nanoscale voids and related metallic impurity gettering in high-energy ion-implanted and annealed epitaxial silicon

Carbon-mediated effects in silicon and in silicon-related materials

The effect of radio-frequency plasma treatment on the electroluminescent properties of violet light-emitting germanium implanted metal-oxide–semiconductor structures

Charge trapping phenomena in high-efficiency metal-oxide-silicon light-emitting diodes with ion-implanted oxide

Damage in silicon carbide induced by Rutherford backscattering analysis

Effect of elevated substrate temperature on growth, properties, and structure of indium tin oxide films prepared by reactive magnetron sputtering

Wave-ordered structures formed on SOI wafers by reactive ion beams

Defects remaining in MeV-ion-implanted and annealed Si away from the peak of the nuclear energy deposition profile

Trans-projected-range effect in proximity gettering of impurities in silicon

Comparative Study of SIMOX Structures Using Four Analytical Techniques

Modelling high-temperature co-implantation of N + and Al + ions in silicon carbide: the effect of stress on the implant and damage distributions

Advanced thermal processing of semiconductor materials in the millisecond range

Cross-Sectional Micro-Raman Spectroscopy: A Tool for Structural Investigations of Thin Polytypic SiC Layers

Optical transitions in Ge nanocrystals formed by high-pressure annealing of Ge+ ion implanted SiO2 films

Overpressurized bubbles versus voids formed in helium implanted and annealed silicon

(AlN) x(SiC) 1− x buried layers implanted in 6H–SiC: a theoretical study of their optimized composition

The effects of the annealing temperature on the formation of helium-filled structures in silicon

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