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Palladium-catalyzed hydroamination of vinylidenecyclopropane-diester with pyrroles and indoles: an approach to azaaromatic vinylcyclopropanes

Chemical communications (Cambridge, England), 2022-09, Vol.58 (71), p.9926-9929

2022

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Stereo‐ and Regioselective Construction of Spirooxindoles Having Continuous Spiral Rings via Asymmetric [3+2] Cyclization of 3‐Isothiocyanato Oxindoles with Thioaurone Derivatives

European journal of organic chemistry, 2020-11, Vol.2020 (42), p.6614-6622

2020

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Mobility of Two‐Dimensional Hole Gas in H‐Terminated Diamond

Physica status solidi. PSS-RRL. Rapid research letters, 2018-03, Vol.12 (3), p.n/a

2018

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Characterization and Mobility Analysis of Normally off Hydrogen‐Terminated Diamond Metal–Oxide–Semiconductor Field‐Effect Transistors

Physica status solidi. A, Applications and materials science, 2020-01, Vol.217 (1), p.n/a

2020

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Phosphine‐Catalyzed Substitution of Allenoates with Oxindoles: An Approach to 3‐Allenic or 3‐Dienoic Oxindoles

ChemistrySelect (Weinheim), 2021-09, Vol.6 (36), p.9709-9713

2021

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Cesium Carbonate Mediated Cyclization of Oxotryptamines with Allenoates: An Approach to Spiro[azepane-4,3′-indol]-2′(1′H)-ones

Synlett, 2021-07, Vol.32 (11), p.1093-1097

2021

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Characterization and mobility analysis of MoO3-gated diamond MOSFET

Japanese Journal of Applied Physics, 2017-10, Vol.56 (10)

2017

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Characteristics of hydrogen terminated single crystalline diamond logic inverter

Wuli xuebao, 2022-04, Vol.71 (8), p.88102

2022

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Multiple enlarged growth of single crystal diamond by MPCVD with PCD-rimless top surface

Chinese physics B, 2019-12, Vol.28 (12), p.128103

2019

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Growth and Characterization of the Laterally Enlarged Single Crystal Diamond Grown by Microwave Plasma Chemical Vapor Deposition

Chinese physics letters, 2018-07, Vol.35 (7), p.78101

2018

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Fabrication of InAlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates by Pulsed Metal Organic Chemical Vapor Deposition

Chinese physics letters, 2016-10, Vol.33 (10), p.108104

2016

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Characteristics of H-terminated single crystalline diamond field effect transistors

Wuli xuebao, 2017-10, Vol.66 (20), p.208101

2017

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Characterization of high-transconductance long-channel hydrogen-terminated polycrystal diamond field effect transistor

Wuli xuebao, 2018-03, Vol.67 (6), p.68101

2018

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Semipolar $(11\bar{2}2)$ and polar (0001) InGaN grown on sapphire substrate by using pulsed metal organic chemical vapor deposition

Chinese physics B, 2017-02, Vol.26 (2), p.27801

2017

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Fabrication of GaN-Based Heterostructures with an InAlGaN/AlGaN Composite Barrier

Chinese physics letters, 2016-08, Vol.33 (8), p.127-130

全汝岱张进成薛军帅赵一宁静林志宇张雅超任泽阳郝跃

2016

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Growth of InAlGaN Quaternary Alloys by Pulsed Metalorganic Chemical Vapor Deposition

Chinese physics letters, 2016-04, Vol.33 (4), p.48101

2016

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Multi-Physics Simulation and Optimization of the MPCVD Device

2023 International Applied Computational Electromagnetics Society Symposium (ACES-China), 2023, p.1-2

2023

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Formation mechanism and regulation of silicon vacancy centers in polycrystalline diamond films

Wuli xuebao, 2023, Vol.72 (3), p.38102

2023

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Multiple enlarged growth of single crystal diamond by MPCVD with PCD-rimless top surfaceProject supported by the National Key Research and Development Program of China (Grant Nos. 2018YFB0406504 and 2016YFB0400105) and the National Postdoctoral Program for Innovative Talents, China (Grant No. BX20190263)

Chinese physics B, 2019-12, Vol.28 (12)

2019

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Analysis of Ozone Pollution Spatio-temporal Evolution Characteristics and Identification of Its Long-term Variation Driving Factor over Hunan Province

Huanjing kexue, 2022-03, Vol.43 (3), p.1246

2022

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Characteristics of hydrogen-terminated single crystalline diamond field effect transistors with different surface orientations

Wuli xuebao, 2020, Vol.69 (2), p.28101

2020

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Fabrication of InAlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates by Pulsed Metal Organic Chemical Vapor DepositionSupported by the National Science and Technology Major Project of China under Grant No 2013ZX02308-002, and the National Natural Sciences Foundation of China under Grant Nos 61574108, 61334002, 61474086 and 61306017

Chinese physics letters, 2016-10, Vol.33 (10)

2016

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Characterization and mobility analysis of MoO 3 -gated diamond MOSFET

Japanese Journal of Applied Physics, 2017-10, Vol.56 (10), p.100301

2017

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Characterization and mobility analysis of MoO^sub 3^-gated diamond MOSFET

Japanese Journal of Applied Physics, 2017-10, Vol.56 (10), p.100301

2017

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Immunoassay of chemical contaminants in milk： A review

Journal of Integrative Agriculture, 2015-11, Vol.14 (11), p.2282-2295

XU Fei, REN Kang, YANG Yu-ze, GUO Jiang-peng, MA Guang-peng, LIU Yi-ming, LU Yong-qiang, LI Xiu-bo (1International Food Policy Research Institute (IFPRI) 2Center for Chinese Agricultural Policy Institute of Geographical Sciences and Natural 3College of Food Science and Nutritional Engineering china Agricultural University Beijing, P.R.China 4Member of JIA Editorial Board Northwest AF University Yangling, P.R.China)

2015

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Palladium-catalyzed hydroamination of vinylidenecyclopropane-diester with pyrroles and indoles: an approach to azaaromatic vinylcyclopropanes

Stereo‐ and Regioselective Construction of Spirooxindoles Having Continuous Spiral Rings via Asymmetric [3+2] Cyclization of 3‐Isothiocyanato Oxindoles with Thioaurone Derivatives

Mobility of Two‐Dimensional Hole Gas in H‐Terminated Diamond

Characterization and Mobility Analysis of Normally off Hydrogen‐Terminated Diamond Metal–Oxide–Semiconductor Field‐Effect Transistors

Phosphine‐Catalyzed Substitution of Allenoates with Oxindoles: An Approach to 3‐Allenic or 3‐Dienoic Oxindoles

Cesium Carbonate Mediated Cyclization of Oxotryptamines with Allenoates: An Approach to Spiro[azepane-4,3′-indol]-2′(1′H)-ones

Characterization and mobility analysis of MoO3-gated diamond MOSFET

Characteristics of hydrogen terminated single crystalline diamond logic inverter

Multiple enlarged growth of single crystal diamond by MPCVD with PCD-rimless top surface

Growth and Characterization of the Laterally Enlarged Single Crystal Diamond Grown by Microwave Plasma Chemical Vapor Deposition

Fabrication of InAlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates by Pulsed Metal Organic Chemical Vapor Deposition

Characteristics of H-terminated single crystalline diamond field effect transistors

Characterization of high-transconductance long-channel hydrogen-terminated polycrystal diamond field effect transistor

Semipolar $(11\bar{2}2)$ and polar (0001) InGaN grown on sapphire substrate by using pulsed metal organic chemical vapor deposition

Fabrication of GaN-Based Heterostructures with an InAlGaN/AlGaN Composite Barrier

Growth of InAlGaN Quaternary Alloys by Pulsed Metalorganic Chemical Vapor Deposition

Multi-Physics Simulation and Optimization of the MPCVD Device

Formation mechanism and regulation of silicon vacancy centers in polycrystalline diamond films

Analysis of Ozone Pollution Spatio-temporal Evolution Characteristics and Identification of Its Long-term Variation Driving Factor over Hunan Province

Characteristics of hydrogen-terminated single crystalline diamond field effect transistors with different surface orientations

Characterization and mobility analysis of MoO 3 -gated diamond MOSFET

Characterization and mobility analysis of MoO^sub 3^-gated diamond MOSFET

Immunoassay of chemical contaminants in milk： A review

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