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Optimal Design, Proportional-Integral, and Model Predictive Control of Intensified Process for Formic Acid Production II: Reactive Dividing Wall Column without Uncontrollable Vapor Split

Industrial & engineering chemistry research, 2021-02, Vol.60 (4), p.1784-1798

2021

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Fault detection and diagnosis for reactive distillation based on convolutional neural network

Computers & chemical engineering, 2021-02, Vol.145, p.107172, Article 107172

2021

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Optimal Design, Proportional–Integral Control, and Model Predictive Control of Intensified Process for Formic Acid Production. 1. Reactive Distillation and Reactive Dividing Wall Column

Industrial & engineering chemistry research, 2020-12, Vol.59 (51), p.22215-22230

2020

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Carbon Stock of Larch Plantations and Its Comparison with an Old-growth Forest in Northeast China

Chinese geographical science, 2016-02, Vol.26 (1), p.10-21

2016

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Leachate from municipal solid waste landfills in a global perspective: Characteristics, influential factors and environmental risks

Journal of cleaner production, 2022-01, Vol.333, p.130234, Article 130234

2022

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Source-specific ecological risks and critical source identification of PPCPs in surface water: Comparing urban and rural areas

The Science of the total environment, 2023-01, Vol.854, p.158792-158792, Article 158792

2023

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A biodegradable multifunctional pectin–montmorillonite fertilizer coating: Controlled-release, water-retention and soil-cementation

International journal of biological macromolecules, 2024-10, Vol.277 (Pt 2), p.134118, Article 134118

2024

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Improved RF Power Performance of AlGaN/GaN HEMT Using by Ti/Au/Al/Ni/Au Shallow Trench Etching Ohmic Contact

IEEE transactions on electron devices, 2021-10, Vol.68 (10), p.4842-4846

2021

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930V and Low-Leakage Current GaN-on-Si Quasi-Vertical PiN Diode With Beveled-Sidewall Treated by Self-Aligned Fluorine Plasma

IEEE electron device letters, 2022-09, Vol.43 (9), p.1400-1403

2022

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Novel GaN-based double-channel p-heterostructure field-effect transistors with a p-GaN insertion layer

Chinese physics B, 2023-10, Vol.32 (10), p.108101

2023

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High V TH and Improved Gate Reliability in P-GaN Gate HEMTs With Oxidation Interlayer

IEEE electron device letters, 2023-09, Vol.44 (9), p.1404-1407

2023

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High Vth and Improved Gate Reliability in P-GaN Gate HEMTs with Oxidation Interlayer

IEEE electron device letters, 2023-09, Vol.44 (9), p.1-1

2023

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Analytical Model on the Threshold Voltage of p-Channel Heterostructure Field-Effect Transistors on a GaN-Based Complementary Circuit Platform

IEEE transactions on electron devices, 2022-01, Vol.69 (1), p.57-62

2022

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Influence of Mg Out‐Diffusion Effect on the Threshold Voltage of GaN‐Based p‐Channel Heterostructure Field‐Effect Transistors

physica status solidi (b), 2023-05, Vol.260 (5), p.n/a

2023

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Roadmap of China steel industry in the past 70 years

Ironmaking & steelmaking, 2019-11, Vol.46 (10), p.922-927

2019

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Improved device performance of recessed-gate AlGaN/GaN HEMTs by using in-situ N2O radical treatment

Chinese physics B, 2022-05, Vol.31 (5), p.689-694

2022

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High power-added-efficiency AlGaN/GaN HEMTs fabricated by atomic level controlled etching

Chinese physics B, 2022-01, Vol.31 (2), p.27301-625

2022

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Coupled TMD modeling of cryogenic treatment of borehole in coal under confinement

Geoenergy Science and Engineering, 2023-08, Vol.227, p.211860, Article 211860

2023

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Improved device performance of recessed-gate AlGaN/GaN HEMTs by using in-situ N 2 O radical treatment

Chinese physics B, 2022-05, Vol.31 (5), p.57301

2022

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Characteristics and influencing factors of carbon emission from typical community household consumption: a case of Beijing

Sheng tai xue bao, 2019, Vol.39 (21), p.7840

2019

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Noninvasive Lift-off Technology for Integration of GaN HEMTs with Diamond

2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2022, p.122-124

2022

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A Modified Method for Sensitive Parameters of GaN HEMTs Large Signal Model

2018 15th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS), 2018, p.1-4

2018

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DC and RF characteristic comparison of recessed-gate AlGaN/GaN HEMTs with CF4-based and Ch-based plasma gate recessing process

2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS), 2017, p.213-215

2017

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Comparison of CF4 plasma versus Cl2 plasma dry etching for gate-recessed Normally-off GaN-based MISHEMT

2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), 2018, p.212-216

2018

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Forest Biomass Dynamics in Typical Changbai Mountain Forest Area, Northeast of China

2010 4th International Conference on Bioinformatics and Biomedical Engineering, 2010, p.1-4

2010

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Optimal Design, Proportional-Integral, and Model Predictive Control of Intensified Process for Formic Acid Production II: Reactive Dividing Wall Column without Uncontrollable Vapor Split

Fault detection and diagnosis for reactive distillation based on convolutional neural network

Optimal Design, Proportional–Integral Control, and Model Predictive Control of Intensified Process for Formic Acid Production. 1. Reactive Distillation and Reactive Dividing Wall Column

Carbon Stock of Larch Plantations and Its Comparison with an Old-growth Forest in Northeast China

Leachate from municipal solid waste landfills in a global perspective: Characteristics, influential factors and environmental risks

Source-specific ecological risks and critical source identification of PPCPs in surface water: Comparing urban and rural areas

A biodegradable multifunctional pectin–montmorillonite fertilizer coating: Controlled-release, water-retention and soil-cementation

Improved RF Power Performance of AlGaN/GaN HEMT Using by Ti/Au/Al/Ni/Au Shallow Trench Etching Ohmic Contact

930V and Low-Leakage Current GaN-on-Si Quasi-Vertical PiN Diode With Beveled-Sidewall Treated by Self-Aligned Fluorine Plasma

Novel GaN-based double-channel p-heterostructure field-effect transistors with a p-GaN insertion layer

High V TH and Improved Gate Reliability in P-GaN Gate HEMTs With Oxidation Interlayer

High Vth and Improved Gate Reliability in P-GaN Gate HEMTs with Oxidation Interlayer

Analytical Model on the Threshold Voltage of p-Channel Heterostructure Field-Effect Transistors on a GaN-Based Complementary Circuit Platform

Influence of Mg Out‐Diffusion Effect on the Threshold Voltage of GaN‐Based p‐Channel Heterostructure Field‐Effect Transistors

Roadmap of China steel industry in the past 70 years

Improved device performance of recessed-gate AlGaN/GaN HEMTs by using in-situ N2O radical treatment

High power-added-efficiency AlGaN/GaN HEMTs fabricated by atomic level controlled etching

Coupled TMD modeling of cryogenic treatment of borehole in coal under confinement

Improved device performance of recessed-gate AlGaN/GaN HEMTs by using in-situ N 2 O radical treatment

Characteristics and influencing factors of carbon emission from typical community household consumption: a case of Beijing

Noninvasive Lift-off Technology for Integration of GaN HEMTs with Diamond

A Modified Method for Sensitive Parameters of GaN HEMTs Large Signal Model

DC and RF characteristic comparison of recessed-gate AlGaN/GaN HEMTs with CF4-based and Ch-based plasma gate recessing process

Comparison of CF4 plasma versus Cl2 plasma dry etching for gate-recessed Normally-off GaN-based MISHEMT

Forest Biomass Dynamics in Typical Changbai Mountain Forest Area, Northeast of China

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