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Integrated polarization-sensitive amplification system for digital information transmission

Nature communications, 2021-11, Vol.12 (1), p.6476-6476, Article 6476

2021

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Electric-Field Tunable Band Offsets in Black Phosphorus and MoS2 van der Waals p‑n Heterostructure

The journal of physical chemistry letters, 2015-07, Vol.6 (13), p.2483-2488

2015

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The mechanism of improving germanium metal–oxide–semiconductor field-effect transistors’ reliability by high-k dielectric and yttrium-doping: From the view of charge trapping

Journal of applied physics, 2022-11, Vol.132 (17)

2022

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Direct Polarimetric Image Sensor and Wide Spectral Response Based on Quasi‐1D Sb2S3 Nanowire

Advanced functional materials, 2021-02, Vol.31 (6), p.n/a

2021

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Wavelength-selectivity polarization dependence of optical absorption and photoresponse in SnS nanosheets

Nano research, 2021-07, Vol.14 (7), p.2224-2230

2021

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Anisotropic photoresponse of layered 2D SnS-based near infrared photodetectors

Journal of materials chemistry. C, Materials for optical and electronic devices, 2017, Vol.5 (43), p.11288-11293

2017

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Tunable Polarity Behavior and Self-Driven Photoswitching in p-WSe2/n-WS2 Heterojunctions

Small (Weinheim an der Bergstrasse, Germany), 2015-10, Vol.11 (40), p.5430-5438

2015

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Low‐Noise Dual‐Band Polarimetric Image Sensor Based on 1D Bi2S3 Nanowire

Advanced science, 2021-07, Vol.8 (14), p.n/a

2021

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Flexible Sensors Based on Organic–Inorganic Hybrid Materials

Advanced materials technologies, 2021-04, Vol.6 (4), p.n/a

2021

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Photodetectors based on 2D material/Si heterostructure

Journal of semiconductors, 2020-08, Vol.41 (8), p.80401-4

2020

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Intercalation of Two-dimensional Layered Materials

Chemical research in Chinese universities, 2020-08, Vol.36 (4), p.584-596

2020

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Low temperature electrical and photo-responsive properties of MoSe2

Applied physics letters, 2014-05, Vol.104 (20)

2014

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Abnormal Photocurrent Response and Enhanced Photocatalytic Activity Induced by Charge Transfer between WS2 Nanosheets and WO3 Nanoparticles

Chemphyschem, 2013-12, Vol.14 (18), p.4069-4073

2013

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Wide-spectrum polarization-sensitive and fast-response photodetector based on 2D group IV-VI semiconductor tin selenide

Fundamental research (Beijing), 2022-11, Vol.2 (6), p.985-992

2022

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Polarization‐sensitive and wide‐spectrum photovoltaic detector based on quasi‐1D ZrGeTe4 nanoribbon

InfoMat, 2022-03, Vol.4 (3), p.n/a

2022

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Spectrometer‐Less Remote Sensing Image Classification Based on Gate‐Tunable van der Waals Heterostructures

Advanced science, 2024-06, Vol.11 (24), p.e2309781-n/a

2024

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Large unsaturated magnetoresistance of 2D magnetic semiconductor Fe-SnS2 homojunction

Journal of semiconductors, 2022-09, Vol.43 (9), p.57-62

2022

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Quantum Confinement Effects on Excitonic Properties in the 2D vdW quantum system: The ZnO/WSe2 Case

Advanced photonics research, 2021-05, Vol.2 (5), p.n/a

2021

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Effect of Electrical Contact on the Performance of Bi2S3 Single Nanowire Photodetectors

Chemphyschem, 2014-08, Vol.15 (12), p.2510-2516

2014

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Advanced Optoelectronic Devices for Neuromorphic Analog Based on Low‐Dimensional Semiconductors

Advanced functional materials, 2023-04, Vol.33 (15), p.n/a

2023

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Synthesis of the nanostructured Cd4GeS6 photocatalysts and their visible-light-driven photocatalytic degradation property

Journal of alloys and compounds, 2014-06, Vol.597, p.91-94

2014

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Flexible Smart Noncontact Control Systems with Ultrasensitive Humidity Sensors

Small (Weinheim an der Bergstrasse, Germany), 2019-09, Vol.15 (38), p.e1902801-n/a

2019

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Cross‐Substitution Promoted Ultrawide Bandgap up to 4.5 eV in a 2D Semiconductor: Gallium Thiophosphate

Advanced materials (Weinheim), 2021-06, Vol.33 (22), p.e2008761-n/a

2021

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Spectrum-Dependent Image Convolutional Processing via a Two-Dimensional Polarization-Sensitive Photodetector

Nano letters, 2024-06, Vol.24 (22), p.6788-6796

2024

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In-Plane Optical and Electrical Anisotropy of 2D Black Arsenic

ACS nano, 2021-01, Vol.15 (1), p.1701-1709

2021

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Integrated polarization-sensitive amplification system for digital information transmission

Electric-Field Tunable Band Offsets in Black Phosphorus and MoS2 van der Waals p‑n Heterostructure

The mechanism of improving germanium metal–oxide–semiconductor field-effect transistors’ reliability by high-k dielectric and yttrium-doping: From the view of charge trapping

Direct Polarimetric Image Sensor and Wide Spectral Response Based on Quasi‐1D Sb2S3 Nanowire

Wavelength-selectivity polarization dependence of optical absorption and photoresponse in SnS nanosheets

Anisotropic photoresponse of layered 2D SnS-based near infrared photodetectors

Tunable Polarity Behavior and Self-Driven Photoswitching in p-WSe2/n-WS2 Heterojunctions

Low‐Noise Dual‐Band Polarimetric Image Sensor Based on 1D Bi2S3 Nanowire

Flexible Sensors Based on Organic–Inorganic Hybrid Materials

Photodetectors based on 2D material/Si heterostructure

Intercalation of Two-dimensional Layered Materials

Low temperature electrical and photo-responsive properties of MoSe2

Abnormal Photocurrent Response and Enhanced Photocatalytic Activity Induced by Charge Transfer between WS2 Nanosheets and WO3 Nanoparticles

Wide-spectrum polarization-sensitive and fast-response photodetector based on 2D group IV-VI semiconductor tin selenide

Polarization‐sensitive and wide‐spectrum photovoltaic detector based on quasi‐1D ZrGeTe4 nanoribbon

Spectrometer‐Less Remote Sensing Image Classification Based on Gate‐Tunable van der Waals Heterostructures

Large unsaturated magnetoresistance of 2D magnetic semiconductor Fe-SnS2 homojunction

Quantum Confinement Effects on Excitonic Properties in the 2D vdW quantum system: The ZnO/WSe2 Case

Effect of Electrical Contact on the Performance of Bi2S3 Single Nanowire Photodetectors

Advanced Optoelectronic Devices for Neuromorphic Analog Based on Low‐Dimensional Semiconductors

Synthesis of the nanostructured Cd4GeS6 photocatalysts and their visible-light-driven photocatalytic degradation property

Flexible Smart Noncontact Control Systems with Ultrasensitive Humidity Sensors

Cross‐Substitution Promoted Ultrawide Bandgap up to 4.5 eV in a 2D Semiconductor: Gallium Thiophosphate

Spectrum-Dependent Image Convolutional Processing via a Two-Dimensional Polarization-Sensitive Photodetector

In-Plane Optical and Electrical Anisotropy of 2D Black Arsenic

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