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A 40 nm 512 kb Cross-Point 8 T Pipeline SRAM With Binary Word-Line Boosting Control, Ripple Bit-Line and Adaptive Data-Aware Write-Assist

IEEE transactions on circuits and systems. I, Regular papers, 2014-12, Vol.61 (12), p.3416-3425

2014

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IEEE_Xplore

Impacts of NBTI/PBTI on Timing Control Circuits and Degradation Tolerant Design in Nanoscale CMOS SRAM

IEEE transactions on circuits and systems. I, Regular papers, 2011-06, Vol.58 (6), p.1239-1251

2011

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IEEE_Xplore

Impacts of NBTI/PBTI and Contact Resistance on Power-Gated SRAM With High- \kappa Metal-Gate Devices

IEEE transactions on very large scale integration (VLSI) systems, 2011-07, Vol.19 (7), p.1192-1204

2011

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IEEE_Xplore

Review of copper and copper alloys as immune and antibacterial element

Transactions of Nonferrous Metals Society of China, 2022-10, Vol.32 (10), p.3163-3181

2022

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A 0.33-V, 500-kHz, 3.94- \mu\hbox 40-nm 72-Kb 9T Subthreshold SRAM With Ripple Bit-Line Structure and Negative Bit-Line Write-Assist

IEEE transactions on circuits and systems. II, Express briefs, 2012-12, Vol.59 (12), p.863-867

2012

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IEEE_Xplore

Hybrid Learning: Innovation in Educational Practices : 8th International Conference, ICHL 2015, Wuhan, China, July 27-29, 2015. Proceedings

2015, 2015

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Power-switch gate-oxide breakdown tolerance techniques for power-gated SRAM

2010 IEEE International Conference on Integrated Circuit Design and Technology, 2010, p.102-105

2010

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IEEE_Xplore

A 55nm 0.55v 6T SRAM with variation-tolerant dual-tracking word-line under-drive and data-aware write-assist

Proceedings of the 2012 ACM/IEEE international symposium on Low power electronics and design, 2012, p.79-84

2012

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A Micro-Watt Multi-port Register File with Wide Operating Voltage Range

2009 IEEE International Workshop on Memory Technology, Design, and Testing, 2009, p.34-37

2009

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IEEE_Xplore

Impacts of NBTI and PBTI on power-gated SRAM with high-k metal-gate devices

2009 IEEE International Symposium on Circuits and Systems (ISCAS), 2009, p.377-380

2009

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IEEE_Xplore

A 40nm 1.0Mb pipeline 6T SRAM with variation-tolerant Step-Up Word-Line and Adaptive Data-Aware Write-Assist

2013 IEEE International Symposium on Circuits and Systems (ISCAS), 2013, p.1468-1471

2013

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IEEE_Xplore

Impact of gate-oxide breakdown on power-gated SRAM

2009 IEEE International Conference on IC Design and Technology, 2009, p.93-96

2009

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IEEE_Xplore

A 40nm 1.0Mb 6T pipeline SRAM with digital-based Bit-Line Under-Drive, Three-Step-Up Word-Line, Adaptive Data-Aware Write-Assist with VCS tracking and Adaptive Voltage Detector for boosting control

2013 IEEE International SOC Conference, 2013, p.110-115

2013

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IEEE_Xplore

New Zircon U-Pb Age of Granodiorite in Chifeng at the Northern Margin of North China Craton and Constraints on Plate Tectonic Evolution

Acta geologica Sinica (Beijing), 2018-02, Vol.92 (1), p.410-413

English ed., 2018

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A Controllable low-power dual-port embedded SRAM for DSP processor

2007 IEEE International Workshop on Memory Technology, Design and Testing, 2007, p.27-30

2007

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IEEE_Xplore

Blended Learning. New Challenges and Innovative Practices: 10th International Conference, ICBL 2017, Hong Kong, China, June 27-29, 2017, Proceedings

1st Edition 2017, 2017

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Impacts of gate-oxide breakdown on power-gated SRAM

Microelectronics, 2011-01, Vol.42 (1), p.101-112

2011

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Variation trends of meteorological variables and their impacts on potential evaporation in Hailar region

Water Science and Engineering, 2012-06, Vol.5 (2), p.137-144

2012

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Impacts of NBTI/PBTI and Contact Resistance on Power-Gated SRAM With High-[Formula Omitted] Metal-Gate Devices

IEEE transactions on very large scale integration (VLSI) systems, 2011-07, Vol.19 (7), p.1192

2011

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Whole Genome Sequencing and Comparisons of Different Chinese Rabies Virus Lineages Including the First Complete Genome of an Arctic-like Strain in China

Biomedical and environmental sciences, 2016-05, Vol.29 (5), p.340-346

2016

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Advances in the Processing and Application of Polymer and Its Composites

2022

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Low-power floating bitline 8-T SRAM design with write assistant circuits

2008 IEEE International SOC Conference, 2008, p.239-242

2008

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IEEE_Xplore

Severe hypertension in China: results from the China PEACE million persons project

Journal of hypertension, 2021-03, Vol.39 (3), p.461

China PEACE MPP Collaborative Group

2021

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The volatility and future of democracy in Asia

2021

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Timing control degradation and NBTI/PBTI tolerant design for Write-replica circuit in nanoscale CMOS SRAM

2009 International Symposium on VLSI Design, Automation and Test, 2009, p.162-165

2009

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IEEE_Xplore

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A 40 nm 512 kb Cross-Point 8 T Pipeline SRAM With Binary Word-Line Boosting Control, Ripple Bit-Line and Adaptive Data-Aware Write-Assist

Impacts of NBTI/PBTI on Timing Control Circuits and Degradation Tolerant Design in Nanoscale CMOS SRAM

Impacts of NBTI/PBTI and Contact Resistance on Power-Gated SRAM With High- \kappa Metal-Gate Devices

Review of copper and copper alloys as immune and antibacterial element

A 0.33-V, 500-kHz, 3.94- \mu\hbox 40-nm 72-Kb 9T Subthreshold SRAM With Ripple Bit-Line Structure and Negative Bit-Line Write-Assist

Hybrid Learning: Innovation in Educational Practices : 8th International Conference, ICHL 2015, Wuhan, China, July 27-29, 2015. Proceedings

Power-switch gate-oxide breakdown tolerance techniques for power-gated SRAM

A 55nm 0.55v 6T SRAM with variation-tolerant dual-tracking word-line under-drive and data-aware write-assist

A Micro-Watt Multi-port Register File with Wide Operating Voltage Range

Impacts of NBTI and PBTI on power-gated SRAM with high-k metal-gate devices

A 40nm 1.0Mb pipeline 6T SRAM with variation-tolerant Step-Up Word-Line and Adaptive Data-Aware Write-Assist

Impact of gate-oxide breakdown on power-gated SRAM

A 40nm 1.0Mb 6T pipeline SRAM with digital-based Bit-Line Under-Drive, Three-Step-Up Word-Line, Adaptive Data-Aware Write-Assist with VCS tracking and Adaptive Voltage Detector for boosting control

New Zircon U-Pb Age of Granodiorite in Chifeng at the Northern Margin of North China Craton and Constraints on Plate Tectonic Evolution

A Controllable low-power dual-port embedded SRAM for DSP processor

Blended Learning. New Challenges and Innovative Practices: 10th International Conference, ICBL 2017, Hong Kong, China, June 27-29, 2017, Proceedings

Impacts of gate-oxide breakdown on power-gated SRAM

Variation trends of meteorological variables and their impacts on potential evaporation in Hailar region

Impacts of NBTI/PBTI and Contact Resistance on Power-Gated SRAM With High-[Formula Omitted] Metal-Gate Devices

Whole Genome Sequencing and Comparisons of Different Chinese Rabies Virus Lineages Including the First Complete Genome of an Arctic-like Strain in China

Advances in the Processing and Application of Polymer and Its Composites

Low-power floating bitline 8-T SRAM design with write assistant circuits

Severe hypertension in China: results from the China PEACE million persons project

The volatility and future of democracy in Asia

Timing control degradation and NBTI/PBTI tolerant design for Write-replica circuit in nanoscale CMOS SRAM

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