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A Reconfigurable 16/32 Gb/s Dual-Mode NRZ/PAM4 SerDes in 65-nm CMOS

IEEE journal of solid-state circuits, 2017-09, Vol.52 (9), p.2430-2447

2017

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IEEE_Xplore

A 56-Gb/s PAM4 Receiver With Low-Overhead Techniques for Threshold and Edge-Based DFE FIR- and IIR-Tap Adaptation in 65-nm CMOS

IEEE journal of solid-state circuits, 2019-03, Vol.54 (3), p.672-684

2019

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IEEE_Xplore

An 8-16 Gb/s, 0.65-1.05 pJ/b, Voltage-Mode Transmitter With Analog Impedance Modulation Equalization and Sub-3 ns Power-State Transitioning

IEEE journal of solid-state circuits, 2014-11, Vol.49 (11), p.2631-2643

2014

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IEEE_Xplore

Toward a nearly defect-free coating via high-energy plasma sparks

Scientific reports, 2017-05, Vol.7 (1), p.2378-10, Article 2378

2017

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Improving the electrochemical stability of AZ31 Mg alloy in a 3.5wt.% NaCl solution via the surface functionalization of plasma electrolytic oxidation coating

Journal of magnesium and alloys, 2022-05, Vol.10 (5), p.1311-1325

2022

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Effect of Deformation Temperature on Microstructure and Mechanical Properties of AZ31 Mg Alloy Processed by Differential-Speed Rolling

Journal of materials science & technology, 2015-05, Vol.31 (5), p.498-503

2015

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Moldflow Simulation and Characterization of Pure Copper Fabricated via Metal Injection Molding

Materials, 2023-07, Vol.16 (15), p.5252

2023

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A 0.47-0.66 pJ/bit, 4.8-8 Gb/s I/O Transceiver in 65 nm CMOS

IEEE journal of solid-state circuits, 2013-05, Vol.48 (5), p.1276-1289

2013

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IEEE_Xplore

In vitro biological response to the oxide layer in pure titanium formed at different current densities by plasma electrolytic oxidation

Applied surface science, 2014-09, Vol.314, p.221-227

2014

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A 16/32 Gb/s Dual-Mode NRZ/PAM4 SerDes in 65nm CMOS

2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2016, p.1-4

2016

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IEEE_Xplore

Grain Refinement by Extension Twin in Mg Alloy during Asymmetrical Rolling

Metals (Basel ), 2018-11, Vol.8 (11), p.891

2018

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A 56 Gb/s PAM4 receiver with low-overhead threshold and edge-based DFE FIR and IIR-tap adaptation in 65nm CMOS

2018 IEEE Custom Integrated Circuits Conference (CICC), 2018, p.1-4

2018

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IEEE_Xplore

A 32 Gb/s 0.55 mW/Gbps PAM4 1-FIR 2-IIR tap DFE receiver in 65-nm CMOS

2015 Symposium on VLSI Circuits (VLSI Circuits), 2015, p.C224-C225

2015

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IEEE_Xplore

A 6-b 1.6-GS/s ADC With Redundant Cycle One-Tap Embedded DFE in 90-nm CMOS

IEEE journal of solid-state circuits, 2013-08, Vol.48 (8), p.1885-1897

2013

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IEEE_Xplore

10 Gb/s adaptive receive-side merged near-end and far-end crosstalk cancellation circuitry in 65 nm CMOS

Analog integrated circuits and signal processing, 2016-08, Vol.88 (2), p.233-243

2016

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26.5 An 8-to-16Gb/s 0.65-to-1.05pJ/b 2-tap impedance-modulated voltage-mode transmitter with fast power-state transitioning in 65nm CMOS

2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2014, p.446-447

2014

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IEEE_Xplore

Electron-Donor and -Acceptor Agents Responsible for Surface Modification Optimizing Electrochemical Performance

ACS applied materials & interfaces, 2017-08, Vol.9 (34), p.28967-28979

2017

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Self-assembly of basket-weave organic layer formed on defective inorganic surface

Chemical engineering journal (Lausanne, Switzerland : 1996), 2019-03, Vol.360, p.385-392

2019

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Heat dissipation properties of oxide layers formed on 7075 Al alloy via plasma electrolytic oxidation

Surface & coatings technology, 2015-05, Vol.269, p.114-118

2015

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Plastic anisotropy calculation of severely-deformed Al-Mg-Si alloy considering texture changes in electron backscatter diffraction

Journal of materials science & technology, 2019-07, Vol.35 (7), p.1439-1443

2019

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Effects of concentration of Ag nanoparticles on surface structure and in vitro biological responses of oxide layer on pure titanium via plasma electrolytic oxidation

Applied surface science, 2015-08, Vol.347, p.574-582

2015

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10 Gb/s adaptive receive-side near-end and far-end crosstalk cancellation circuitry

2014 IEEE 57th International Midwest Symposium on Circuits and Systems (MWSCAS), 2014, p.77-80

2014

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IEEE_Xplore

Achieving high fracture toughness and tribological properties in high-carbon steels via sub-zero treatment and low-temperature tempering

Journal of alloys and compounds, 2020-04, Vol.821, p.153195, Article 153195

2020

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A low-power dual-mode 20-Gb/s NRZ and 28-Gb/s PAM-4 voltage-mode transmitter

2017 IEEE Asian Solid-State Circuits Conference (A-SSCC), 2017, p.261-264

2017

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Guar gum-driven high-energy plasma electrolytic oxidation for concurrent improvements in the electrochemical and catalytic properties of Ti-15 Zr alloy

Surfaces and interfaces, 2022-11, Vol.34, p.102403, Article 102403

2022

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A Reconfigurable 16/32 Gb/s Dual-Mode NRZ/PAM4 SerDes in 65-nm CMOS

A 56-Gb/s PAM4 Receiver With Low-Overhead Techniques for Threshold and Edge-Based DFE FIR- and IIR-Tap Adaptation in 65-nm CMOS

An 8-16 Gb/s, 0.65-1.05 pJ/b, Voltage-Mode Transmitter With Analog Impedance Modulation Equalization and Sub-3 ns Power-State Transitioning

Toward a nearly defect-free coating via high-energy plasma sparks

Improving the electrochemical stability of AZ31 Mg alloy in a 3.5wt.% NaCl solution via the surface functionalization of plasma electrolytic oxidation coating

Effect of Deformation Temperature on Microstructure and Mechanical Properties of AZ31 Mg Alloy Processed by Differential-Speed Rolling

Moldflow Simulation and Characterization of Pure Copper Fabricated via Metal Injection Molding

A 0.47-0.66 pJ/bit, 4.8-8 Gb/s I/O Transceiver in 65 nm CMOS

In vitro biological response to the oxide layer in pure titanium formed at different current densities by plasma electrolytic oxidation

A 16/32 Gb/s Dual-Mode NRZ/PAM4 SerDes in 65nm CMOS

Grain Refinement by Extension Twin in Mg Alloy during Asymmetrical Rolling

A 56 Gb/s PAM4 receiver with low-overhead threshold and edge-based DFE FIR and IIR-tap adaptation in 65nm CMOS

A 32 Gb/s 0.55 mW/Gbps PAM4 1-FIR 2-IIR tap DFE receiver in 65-nm CMOS

A 6-b 1.6-GS/s ADC With Redundant Cycle One-Tap Embedded DFE in 90-nm CMOS

10 Gb/s adaptive receive-side merged near-end and far-end crosstalk cancellation circuitry in 65 nm CMOS

26.5 An 8-to-16Gb/s 0.65-to-1.05pJ/b 2-tap impedance-modulated voltage-mode transmitter with fast power-state transitioning in 65nm CMOS

Electron-Donor and -Acceptor Agents Responsible for Surface Modification Optimizing Electrochemical Performance

Self-assembly of basket-weave organic layer formed on defective inorganic surface

Heat dissipation properties of oxide layers formed on 7075 Al alloy via plasma electrolytic oxidation

Plastic anisotropy calculation of severely-deformed Al-Mg-Si alloy considering texture changes in electron backscatter diffraction

Effects of concentration of Ag nanoparticles on surface structure and in vitro biological responses of oxide layer on pure titanium via plasma electrolytic oxidation

10 Gb/s adaptive receive-side near-end and far-end crosstalk cancellation circuitry

Achieving high fracture toughness and tribological properties in high-carbon steels via sub-zero treatment and low-temperature tempering

A low-power dual-mode 20-Gb/s NRZ and 28-Gb/s PAM-4 voltage-mode transmitter

Guar gum-driven high-energy plasma electrolytic oxidation for concurrent improvements in the electrochemical and catalytic properties of Ti-15 Zr alloy

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