UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

A 0.003-mm 2 440fs RMS -Jitter and −64dBc-Reference-Spur Ring-VCO-Based Type-I PLL Using a Current-Reuse Sampling Phase Detector in 28-nm CMOS

IEEE transactions on circuits and systems. I, Regular papers, 2021-06, Vol.68 (6), p.2307-2316

2021

Volltextzugriff (PDF)

A 0.003-mm2 440fsRMS-Jitter and -64dBc-Reference-Spur Ring-VCO-Based Type-I PLL Using a Current-Reuse Sampling Phase Detector in 28-nm CMOS

2019 IEEE Asian Solid-State Circuits Conference (A-SSCC), 2019, p.283-284

2019

Volltextzugriff (PDF)

A 0.003-mm2 440fsRMS-Jitter and −64dBc-Reference-Spur Ring-VCO-Based Type-I PLL Using a Current-Reuse Sampling Phase Detector in 28-nm CMOS

IEEE transactions on circuits and systems. I, Regular papers, 2021-06, Vol.68 (6), p.2307-2316

2021

Volltextzugriff (PDF)

A 0.0056-mm 2 −249-dB-FoM All-Digital MDLL Using a Block-Sharing Offset-Free Frequency-Tracking Loop and Dual Multiplexed-Ring VCOs

IEEE journal of solid-state circuits, 2019-01, Vol.54 (1), p.88-98

2019

Volltextzugriff (PDF)

A 0.0056-mm2 −249-dB-FoM All-Digital MDLL Using a Block-Sharing Offset-Free Frequency-Tracking Loop and Dual Multiplexed-Ring VCOs

IEEE journal of solid-state circuits, 2019-01, Vol.54 (1), p.88-98

2019

Volltextzugriff (PDF)

A 0.0056mm2 all-digital MDLL using edge re-extraction, dual-ring VCOs and a 0.3mW block-sharing frequency tracking loop achieving 292fsrms Jitter and −249dB FOM

2018 IEEE International Solid - State Circuits Conference - (ISSCC), 2018, p.118-120

2018

Volltextzugriff (PDF)

A 0.0071-mm 2 10.8ps pp -Jitter 4 to 10-Gb/s 5-Tap Current-Mode Transmitter Using a Hybrid Delay Line for Sub-1-UI Fractional De-Emphasis

IEEE transactions on circuits and systems. I, Regular papers, 2019-10, Vol.66 (10), p.3991-4004

2019

Volltextzugriff (PDF)

A 0.0071-mm2 10.8pspp-Jitter 4 to 10-Gb/s 5-Tap Current-Mode Transmitter Using a Hybrid Delay Line for Sub-1-UI Fractional De-Emphasis

IEEE transactions on circuits and systems. I, Regular papers, 2019-10, Vol.66 (10), p.3991-4004

2019

Volltextzugriff (PDF)

A 0.016mm 2 Active Area 4GHz Fully Ring-Oscillator-Based Cascaded Fractional-N PLL With Burst-Mode Sampling

IEEE transactions on circuits and systems. II, Express briefs, 2023-10, Vol.70 (10), p.3792-3796

2023

Volltextzugriff (PDF)

A 0.016mm2 Active Area 4GHz Fully Ring-Oscillator-based Cascaded Fractional-N PLL with Burst-Mode Sampling

IEEE transactions on circuits and systems. II, Express briefs, 2023-10, Vol.70 (10), p.1-1

2023

Volltextzugriff (PDF)

0.1-[Formula Omitted] InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71-76 and 81-86 GHz: Impact of Passivation and Gate Recess

IEEE transactions on electron devices, 2016-08, Vol.63 (8)

2016

Volltextzugriff (PDF)

A 0.1 ka-year Record of Environmental Evolution in Hongjiannao Lake, Shaanxi Province

Hu po ke xue, 2004, Vol.16 (2), p.106-113

2004

Volltextzugriff (PDF)

0.1- \mu \text InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71-76 and 81-86 GHz: Impact of Passivation and Gate Recess

IEEE transactions on electron devices, 2016-08, Vol.63 (8), p.3076-3083

2016

Volltextzugriff (PDF)

0.1 /spl mu/m RFCMOS on high resistivity substrates for system on chip (SOC) applications

Digest. International Electron Devices Meeting, 2002, p.667-670

2002

Volltextzugriff (PDF)

0.1 μm In02Al08Sb-InAs HEMT low-noise amplifiers for ultralow-power applications

2007 IEEE International Electron Devices Meeting, 2007, p.617-620

2007

Volltextzugriff (PDF)

0.1 μm RFCMOS on high resistivity substrates for system on chip (SOC) applications

2002

Volltextzugriff (PDF)

A 0.12-mm 2 1.2-to-2.4-mW 1.3-to-2.65-GHz Fractional-N Bang-Bang Digital PLL With 8-$\mu$ s Settling Time for Multi-ISM-Band ULP Radios

IEEE transactions on circuits and systems. I, Regular papers, 2019-09, Vol.66 (9), p.3307-3316

2019

Volltextzugriff (PDF)

A 0.12-mm2 1.2-to-2.4-mW 1.3-to-2.65-GHz Fractional-N Bang-Bang Digital PLL With 8-[Formula Omitted]s Settling Time for Multi-ISM-Band ULP Radios

IEEE transactions on circuits and systems. I, Regular papers, 2019-01, Vol.66 (9), p.3307

2019

Volltextzugriff (PDF)

A 0.12-mm2 1.2-to-2.4-mW 1.3-to-2.65-GHz Fractional-N Bang-Bang Digital PLL With 8- \mu s Settling Time for Multi-ISM-Band ULP Radios

IEEE transactions on circuits and systems. I, Regular papers, 2019-09, Vol.66 (9), p.3307-3316

2019

Volltextzugriff (PDF)

A 0.13-/spl mu/m SOI CMOS technology for low-power digital and RF applications

2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184), 2001, p.85-86

2001

Volltextzugriff (PDF)

A 0.15 /spl mu/m CMOS foundry technology with 0.1 /spl mu/m devices for high performance applications

2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104), 2000, p.146-147

2000

Volltextzugriff (PDF)

0.18 µm BCD technology platform with best-in-class 6 V to 70 V power MOSFETs

2012 24th International Symposium on Power Semiconductor Devices and ICs, 2012, p.401-404

2012

Volltextzugriff (PDF)

A 0.2-V Energy-Harvesting BLE Transmitter With a Micropower Manager Achieving 25% System Efficiency at 0-dBm Output and 5.2-nW Sleep Power in 28-nm CMOS

IEEE journal of solid-state circuits, 2019-05, Vol.54 (5), p.1351-1362

2019

Volltextzugriff (PDF)

A 0.2 V Micro‐Electromechanical Switch Enabled by a Phase Transition

Small (Weinheim an der Bergstrasse, Germany), 2018-04, Vol.14 (14), p.e1703621-n/a

2018

Volltextzugriff (PDF)

A 0.22-to-2.4V-input fine-grained fully integrated rational buck-boost SC DC-DC converter using algorithmic voltage-feed-in (AVFI) topology achieving 84.1% peak efficiency at 13.2mW/mm2

2018 IEEE International Solid - State Circuits Conference - (ISSCC), 2018, p.422-424

2018

Volltextzugriff (PDF)

1 – 25 von 102.084

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(83.990)
Mit Volltextzugriff
(87.933)

Publikationsform

8 weitere anzeigen...

Weniger anzeigen...

Sprache

Englisch
(99.101)
Chinesisch
(2.821)
Japanisch
(132)
Russisch
(72)
Koreanisch
(62)
Deutsch
(49)
Französisch
(40)
Spanisch
(24)
Norwegisch
(14)
Portugiesisch
(13)
Italienisch
(4)
Polnisch
(3)
Croatian
(1)
Persisch
(1)

9 weitere anzeigen...

Weniger anzeigen...

Erscheinungsjahr

n.n

Thema

Science & Technology
(69.654)
Life Sciences & Biomedicine
(31.451)
Technology
(24.778)
Physical Sciences
(22.345)
Humans
(20.005)
Physics
(12.717)
Male
(11.360)
Animals
(11.161)
Female
(10.989)
Materials Science
(10.752)
Engineering
(10.617)
Biological And Medical Sciences
(9.520)
Materials Science, Multidisciplinary
(8.534)
Exact Sciences And Technology
(7.987)
Chemistry
(7.411)
Medical Sciences
(6.553)
Middle Aged
(5.848)
Adult
(5.835)
Computer Science
(5.827)
Mice
(5.063)

15 weitere anzeigen...

Weniger anzeigen...

Kollektion

Ingenta
(37.764)
EZB Electronic Journals Library
(36.940)
MEDLINE
(30.473)
Access via ScienceDirect (Elsevier)
(19.074)
WK Lippincott Williams & Wilkins–Connect here FIRST to enable access
(17.619)
Publisher or Other Site
(15.770)
Elsevier Journal Backfiles on ScienceDirect (DFG Nationallizenzen)
(12.396)
IngentaConnect Journals
(11.684)
Wiley Online Library
(9.749)
Springer journals
(8.086)
IEEE Electronic Library Online
(7.234)
Wiley Online Library
(6.810)
Ebook Central Perpetual and DDA
(4.859)
eBooks on EBSCOhost
(4.837)
APS: American Physical Society E-Journals (Physics)
(3.759)
SpringerLINK Contemporary (Konsortium Baden-Württemberg)
(3.669)
Nature
(3.405)
Taylor & Francis Journals
(2.861)
Oxford Journals
(2.859)
PROLA - Physical Review Online Archive
(2.656)

15 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

Applied Mechanics And Materials
(1.724)
Physical Review Letters
(1.359)
The Journal Of High Energy Physics
(1.204)
Physics Letters. B
(1.192)
Applied Physics Letters
(894)
Physical Review. D
(723)
The European Physical Journal. C, Particles And Fields
(710)
Wuli Huaxue Xuebao
(693)
Information Technology Applications In Industry Ii, Pts 1-4
(633)
Cancer Research
(617)

5 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

Menü

Weitere Dienste

Einstellungen

A 0.003-mm 2 440fs RMS -Jitter and −64dBc-Reference-Spur Ring-VCO-Based Type-I PLL Using a Current-Reuse Sampling Phase Detector in 28-nm CMOS

A 0.003-mm2 440fsRMS-Jitter and -64dBc-Reference-Spur Ring-VCO-Based Type-I PLL Using a Current-Reuse Sampling Phase Detector in 28-nm CMOS

A 0.003-mm2 440fsRMS-Jitter and −64dBc-Reference-Spur Ring-VCO-Based Type-I PLL Using a Current-Reuse Sampling Phase Detector in 28-nm CMOS

A 0.0056-mm 2 −249-dB-FoM All-Digital MDLL Using a Block-Sharing Offset-Free Frequency-Tracking Loop and Dual Multiplexed-Ring VCOs

A 0.0056-mm2 −249-dB-FoM All-Digital MDLL Using a Block-Sharing Offset-Free Frequency-Tracking Loop and Dual Multiplexed-Ring VCOs

A 0.0056mm2 all-digital MDLL using edge re-extraction, dual-ring VCOs and a 0.3mW block-sharing frequency tracking loop achieving 292fsrms Jitter and −249dB FOM

A 0.0071-mm 2 10.8ps pp -Jitter 4 to 10-Gb/s 5-Tap Current-Mode Transmitter Using a Hybrid Delay Line for Sub-1-UI Fractional De-Emphasis

A 0.0071-mm2 10.8pspp-Jitter 4 to 10-Gb/s 5-Tap Current-Mode Transmitter Using a Hybrid Delay Line for Sub-1-UI Fractional De-Emphasis

A 0.016mm 2 Active Area 4GHz Fully Ring-Oscillator-Based Cascaded Fractional-N PLL With Burst-Mode Sampling

A 0.016mm2 Active Area 4GHz Fully Ring-Oscillator-based Cascaded Fractional-N PLL with Burst-Mode Sampling

0.1-[Formula Omitted] InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71-76 and 81-86 GHz: Impact of Passivation and Gate Recess

A 0.1 ka-year Record of Environmental Evolution in Hongjiannao Lake, Shaanxi Province

0.1- \mu \text InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71-76 and 81-86 GHz: Impact of Passivation and Gate Recess

0.1 /spl mu/m RFCMOS on high resistivity substrates for system on chip (SOC) applications

0.1 μm In02Al08Sb-InAs HEMT low-noise amplifiers for ultralow-power applications

0.1 μm RFCMOS on high resistivity substrates for system on chip (SOC) applications

A 0.12-mm 2 1.2-to-2.4-mW 1.3-to-2.65-GHz Fractional-N Bang-Bang Digital PLL With 8-$\mu$ s Settling Time for Multi-ISM-Band ULP Radios

A 0.12-mm2 1.2-to-2.4-mW 1.3-to-2.65-GHz Fractional-N Bang-Bang Digital PLL With 8-[Formula Omitted]s Settling Time for Multi-ISM-Band ULP Radios

A 0.12-mm2 1.2-to-2.4-mW 1.3-to-2.65-GHz Fractional-N Bang-Bang Digital PLL With 8- \mu s Settling Time for Multi-ISM-Band ULP Radios

A 0.13-/spl mu/m SOI CMOS technology for low-power digital and RF applications

A 0.15 /spl mu/m CMOS foundry technology with 0.1 /spl mu/m devices for high performance applications

0.18 µm BCD technology platform with best-in-class 6 V to 70 V power MOSFETs

A 0.2-V Energy-Harvesting BLE Transmitter With a Micropower Manager Achieving 25% System Efficiency at 0-dBm Output and 5.2-nW Sleep Power in 28-nm CMOS

A 0.2 V Micro‐Electromechanical Switch Enabled by a Phase Transition

A 0.22-to-2.4V-input fine-grained fully integrated rational buck-boost SC DC-DC converter using algorithmic voltage-feed-in (AVFI) topology achieving 84.1% peak efficiency at 13.2mW/mm2

Suchergebnisse filtern