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Noise, gain, and capture probability of p-type InAs-GaAs quantum-dot and quantum dot-in-well infrared photodetectors

Journal of applied physics, 2017-06, Vol.121 (24)

2017

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Analysis of Extended Threshold Wavelength Photoresponse in Nonsymmetrical p-GaAs/AlGaAs Heterostructure Photodetectors

IEEE journal of selected topics in quantum electronics, 2018-03, Vol.24 (2), p.1-7

2018

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InAs/GaAs p -type quantum dot infrared photodetector with higher efficiency

Applied physics letters, 2013-12, Vol.103 (24)

2013

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GaMnAs for Mid-Wave Infrared Photodetection

IEEE photonics technology letters, 2016-10, Vol.28 (20), p.2261-2264

2016

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Band offsets and carrier dynamics of type-II InAs/GaSb superlattice photodetectors studied by internal photoemission spectroscopy

Applied physics letters, 2013-10, Vol.103 (18)

2013

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Optical study of HgCdTe infrared photodetectors using internal photoemission spectroscopy

Applied physics letters, 2014-03, Vol.104 (13)

2014

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Band-offset non-commutativity of GaAs/AlGaAs interfaces probed by internal photoemission spectroscopy

Applied physics letters, 2014-10, Vol.105 (17)

2014

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Wavelength-extended photovoltaic infrared photodetectors

Applied physics letters, 2014-03, Vol.104 (13)

2014

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High temperature terahertz response in a p-type quantum dot-in-well photodetector

Applied physics letters, 2014-10, Vol.105 (15), p.151107

2014

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Study of valence-band intersublevel transitions in InAs/GaAs quantum dots-in-well infrared photodetectors

Applied physics letters, 2014-04, Vol.104 (17)

2014

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InAs/GaAs quantum dot and dots-in-well infrared photodetectors based on p-type valence-band intersublevel transitions

Infrared physics & technology, 2015-05, Vol.70, p.15-19

2015

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Tunable hot-carrier photodetection beyond the bandgap spectral limit

Nature photonics, 2014-05, Vol.8 (5), p.412-418

2014

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Dielectric function model for p -type semiconductor inter-valence band transitions

Journal of applied physics, 2011-05, Vol.109 (10), p.103528-103528-9

2011

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Tunable hot-carrier photodetector

2015 IEEE Summer Topicals Meeting Series (SUM), 2015, p.61-62

2015

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Design of resonant-cavity-enhanced multi-band photodetectors

Journal of applied physics, 2011-08, Vol.110 (4), p.043112-043112-7

2011

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Temperature-dependent far-infrared response of epitaxial multilayer graphene

Applied physics letters, 2013-06, Vol.102 (23), p.231906

2013

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Mid-infrared photodetectors operating over an extended wavelength range up to 90 K

Optics letters, 2016-01, Vol.41 (2), p.285-288

2016

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Optical Investigations of Directly Wafer-Bonded InP–GaAs Heterojunctions

Journal of the Electrochemical Society, 2009, Vol.156 (3), p.H220

2009

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Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well

Journal of alloys and compounds, 2010-02, Vol.491 (1-2), p.595-598

2010

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InAs0.45P0.55/InP strained multiple quantum wells intermixed by inductively coupled plasma etching

Materials research bulletin, 2009-12, Vol.44 (12), p.2217-2221

2009

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Microstructure and Optical Properties of Pb1-xSrxSe Thin Films

Wu ji cai liao xue bao, 2007-11, Vol.22 (6), p.1108-1112

2007

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Temperature-dependent internal photoemission probe for band parameters

Physical review. B, Condensed matter and materials physics, 2012-11, Vol.86 (19), Article 195315

2012

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Luminescent properties of annealed and directly wafer-bonded InAsP/InGaAsP multiple quantum wells

Semiconductor science and technology, 2005-06, Vol.20 (6), p.615-620

2005

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Study on infrared absorption of interfaces in direct wafer bonded InP-GaAs structures

Wuli xuebao, 2005-09, Vol.54 (9), p.4334

2005

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Direct observation of spin-orbit splitting and phonon-assisted optical transitions in the valence band by internal photoemission spectroscopy

Physical review. B, Condensed matter and materials physics, 2013-11, Vol.88 (20), Article 201302

2013

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Noise, gain, and capture probability of p-type InAs-GaAs quantum-dot and quantum dot-in-well infrared photodetectors

Analysis of Extended Threshold Wavelength Photoresponse in Nonsymmetrical p-GaAs/AlGaAs Heterostructure Photodetectors

InAs/GaAs p -type quantum dot infrared photodetector with higher efficiency

GaMnAs for Mid-Wave Infrared Photodetection

Band offsets and carrier dynamics of type-II InAs/GaSb superlattice photodetectors studied by internal photoemission spectroscopy

Optical study of HgCdTe infrared photodetectors using internal photoemission spectroscopy

Band-offset non-commutativity of GaAs/AlGaAs interfaces probed by internal photoemission spectroscopy

Wavelength-extended photovoltaic infrared photodetectors

High temperature terahertz response in a p-type quantum dot-in-well photodetector

Study of valence-band intersublevel transitions in InAs/GaAs quantum dots-in-well infrared photodetectors

InAs/GaAs quantum dot and dots-in-well infrared photodetectors based on p-type valence-band intersublevel transitions

Tunable hot-carrier photodetection beyond the bandgap spectral limit

Dielectric function model for p -type semiconductor inter-valence band transitions

Tunable hot-carrier photodetector

Design of resonant-cavity-enhanced multi-band photodetectors

Temperature-dependent far-infrared response of epitaxial multilayer graphene

Mid-infrared photodetectors operating over an extended wavelength range up to 90 K

Optical Investigations of Directly Wafer-Bonded InP–GaAs Heterojunctions

Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well

InAs0.45P0.55/InP strained multiple quantum wells intermixed by inductively coupled plasma etching

Microstructure and Optical Properties of Pb1-xSrxSe Thin Films

Temperature-dependent internal photoemission probe for band parameters

Luminescent properties of annealed and directly wafer-bonded InAsP/InGaAsP multiple quantum wells

Study on infrared absorption of interfaces in direct wafer bonded InP-GaAs structures

Direct observation of spin-orbit splitting and phonon-assisted optical transitions in the valence band by internal photoemission spectroscopy

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