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Observation of single optical site of Eu and Mg codoped GaN grown by NH3-source molecular beam epitaxy

Journal of applied physics, 2019-05, Vol.125 (17)

2019

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Mechanism of improved crystallinity by defect-modification in proton-irradiated GaAsPN photovoltaics: Experimental and first-principle calculations approach

Journal of applied physics, 2022-08, Vol.132 (6)

2022

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Origin of lattice bowing of freestanding GaN substrates grown by hydride vapor phase epitaxy

Journal of applied physics, 2016-01, Vol.119 (4)

2016

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Self‐Organized Eu‐Doped GaN Nanocolumn Light‐Emitting Diode Grown by RF‐Molecular‐Beam Epitaxy

Physica status solidi. A, Applications and materials science, 2019-01, Vol.216 (1), p.1800501-n/a

2019

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Fabrication and optical properties of regularly arranged GaN-based nanocolumns on Si substrate

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2019-05, Vol.37 (3)

2019

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Doping control of GaAsPN alloys by molecular beam epitaxy for monolithic III-V/Si tandem solar cells

Journal of crystal growth, 2017-09, Vol.473, p.55-59

2017

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GaN‐Based Monolithic Inverter Consisting of Enhancement‐ and Depletion‐Mode MOSFETs by Si Ion Implantation

Physica status solidi. A, Applications and materials science, 2020-02, Vol.217 (3), p.n/a

2020

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Regularly arranged Eu-doped GaN nanocolumns grown by RF-plasma-assisted molecular beam epitaxy through Ti-mask selective-area growth technique

Journal of crystal growth, 2019-04, Vol.511, p.73-78

2019

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Growth of phosphide-based type-II stacked quantum dots for III–V/Si photovoltaic applications

Japanese Journal of Applied Physics, 2021-04, Vol.60 (4), p.45502

2021

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Impact of temperature and nitrogen composition on the growth of GaAsPN alloys

Journal of crystal growth, 2018-03, Vol.486, p.24-29

2018

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Alternately double-sided growth of low-curvature GaN templates on sapphire substrates using hydride vapor phase epitaxy

Physica Status Solidi. B: Basic Solid State Physics, 2016-05, Vol.253 (5), p.819-823

2016

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Three‐phase voltage control method by single‐phase distributed generators connected to islanded distribution network

Electrical engineering in Japan, 2019-05, Vol.207 (3), p.14-22

2019

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Molecular-beam epitaxy growth of dilute GaAsN alloys by surface nitridation

Journal of crystal growth, 2016-02, Vol.435, p.19-23

2016

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Improved crystallinity of GaP-based dilute nitride alloys by proton/electron irradiation and rapid thermal annealing

Japanese Journal of Applied Physics, 2022-02, Vol.61 (2), p.20907

2022

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Growth of semipolar {20-21} GaN and {20-2-1} GaN for GaN substrate

Physica Status Solidi. B: Basic Solid State Physics, 2016-01, Vol.253 (1), p.36-45

2016

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Growth of low defect density GaP layers on Si substrates within the critical thickness by optimized shutter sequence and post-growth annealing

Journal of crystal growth, 2010-07, Vol.312 (15), p.2179-2184

2010

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Determination method of Volt‐Var and Volt‐Watt curve for smart inverters applying optimization of active/reactive power allocation for each inverter

Electrical engineering in Japan, 2019-11, Vol.209 (1-2), p.10-19

2019

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Metal‐organic vapor phase epitaxy of GaPN alloys via surface nitridation using ammonia

Physica Status Solidi. B: Basic Solid State Physics, 2017-02, Vol.254 (2), p.np-n/a

2017

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Fabrication of Si/SiO2/GaN structure by surface-activated bonding for monolithic integration of optoelectronic devices

Japanese Journal of Applied Physics, 2016-05, Vol.55 (5S)

2016

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Structural and optical properties of Eu-doped GaN nanocolumns on (111) Si substrates grown by RF-plasma-assisted molecular beam epitaxy

Japanese Journal of Applied Physics, 2016-05, Vol.55 (5S), p.5

2016

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Growth of pit-free GaP on Si by suppression of a surface reaction at an initial growth stage

Journal of crystal growth, 2009-01, Vol.311 (3), p.794-797

2009

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Crystalline property analysis of semipolar (20-21) GaN on (22-43) patterned sapphire substrate by X-ray microdiffraction and transmission electron microscopy

Physica Status Solidi. B: Basic Solid State Physics, 2015-05, Vol.252 (5), p.1149-1154

2015

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Self-Separation of Large Freestanding Semipolar {112̄2} GaN Films Using r-Plane Patterned Sapphire Substrates

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8S), p.8-08JA09

2013

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Thickness and growth condition dependence of crystallinity in semipolar (20-21) GaN films grown on (22-43) patterned sapphire substrates

Physica Status Solidi. B: Basic Solid State Physics, 2015-05, Vol.252 (5), p.1142-1148

2015

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Solar-Blind Focal Plane Array Photodetectors for Massive Parallel Processing Application Based on Optoelectronic Integrated Circuit and Field-Programmable Gate Array

Sensors and materials, 2015

2015

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Observation of single optical site of Eu and Mg codoped GaN grown by NH3-source molecular beam epitaxy

Mechanism of improved crystallinity by defect-modification in proton-irradiated GaAsPN photovoltaics: Experimental and first-principle calculations approach

Origin of lattice bowing of freestanding GaN substrates grown by hydride vapor phase epitaxy

Self‐Organized Eu‐Doped GaN Nanocolumn Light‐Emitting Diode Grown by RF‐Molecular‐Beam Epitaxy

Fabrication and optical properties of regularly arranged GaN-based nanocolumns on Si substrate

Doping control of GaAsPN alloys by molecular beam epitaxy for monolithic III-V/Si tandem solar cells

GaN‐Based Monolithic Inverter Consisting of Enhancement‐ and Depletion‐Mode MOSFETs by Si Ion Implantation

Regularly arranged Eu-doped GaN nanocolumns grown by RF-plasma-assisted molecular beam epitaxy through Ti-mask selective-area growth technique

Growth of phosphide-based type-II stacked quantum dots for III–V/Si photovoltaic applications

Impact of temperature and nitrogen composition on the growth of GaAsPN alloys

Alternately double-sided growth of low-curvature GaN templates on sapphire substrates using hydride vapor phase epitaxy

Three‐phase voltage control method by single‐phase distributed generators connected to islanded distribution network

Molecular-beam epitaxy growth of dilute GaAsN alloys by surface nitridation

Improved crystallinity of GaP-based dilute nitride alloys by proton/electron irradiation and rapid thermal annealing

Growth of semipolar {20-21} GaN and {20-2-1} GaN for GaN substrate

Growth of low defect density GaP layers on Si substrates within the critical thickness by optimized shutter sequence and post-growth annealing

Determination method of Volt‐Var and Volt‐Watt curve for smart inverters applying optimization of active/reactive power allocation for each inverter

Metal‐organic vapor phase epitaxy of GaPN alloys via surface nitridation using ammonia

Fabrication of Si/SiO2/GaN structure by surface-activated bonding for monolithic integration of optoelectronic devices

Structural and optical properties of Eu-doped GaN nanocolumns on (111) Si substrates grown by RF-plasma-assisted molecular beam epitaxy

Growth of pit-free GaP on Si by suppression of a surface reaction at an initial growth stage

Crystalline property analysis of semipolar (20-21) GaN on (22-43) patterned sapphire substrate by X-ray microdiffraction and transmission electron microscopy

Self-Separation of Large Freestanding Semipolar {112̄2} GaN Films Using r-Plane Patterned Sapphire Substrates

Thickness and growth condition dependence of crystallinity in semipolar (20-21) GaN films grown on (22-43) patterned sapphire substrates

Solar-Blind Focal Plane Array Photodetectors for Massive Parallel Processing Application Based on Optoelectronic Integrated Circuit and Field-Programmable Gate Array

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