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Self-Limiting Layer-by-Layer Oxidation of Atomically Thin WSe2

Nano letters, 2015-03, Vol.15 (3), p.2067-2073

2015

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Anisotropic Etching of Atomically Thin MoS2

Journal of physical chemistry. C, 2013-12, Vol.117 (48), p.25643-25649

2013

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Thickness Scaling Effect on Interfacial Barrier and Electrical Contact to Two-Dimensional MoS2 Layers

ACS nano, 2014-12, Vol.8 (12), p.12836-12842

2014

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Strong Enhancement of Raman Scattering from a Bulk-Inactive Vibrational Mode in Few-Layer MoTe2

ACS nano, 2014-04, Vol.8 (4), p.3895-3903

2014

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Electrostatic potential measurement at the Pt/TiO2 interface using electron holography

Journal of applied physics, 2021-05, Vol.129 (17)

2021

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Step-like resistance changes in VO2 thin films grown on hexagonal boron nitride with in situ optically observable metallic domains

Applied physics letters, 2022-01, Vol.120 (5)

2022

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Origin of Noise in Layered MoTe2 Transistors and its Possible Use for Environmental Sensors

Advanced materials (Weinheim), 2015-11, Vol.27 (42), p.6612-6619

2015

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Growth of vanadium dioxide thin films on hexagonal boron nitride flakes as transferrable substrates

Scientific reports, 2019-02, Vol.9 (1), p.2857-2857, Article 2857

2019

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Broad range thickness identification of hexagonal boron nitride by colors

Applied physics express, 2019-05, Vol.12 (5), p.55007

2019

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Virtual substrate method for nanomaterials characterization

Nature communications, 2017-05, Vol.8 (1), p.15629-15629, Article 15629

2017

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Barrier Formation at the Contacts of Vanadium Dioxide and Transition-Metal Dichalcogenides

ACS applied materials & interfaces, 2019-10, Vol.11 (40), p.36871-36879

2019

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“The Princess and the Pea” at the Nanoscale: Wrinkling and Delamination of Graphene on Nanoparticles

Physical review. X, 2012-12, Vol.2 (4), p.041018, Article 041018

2012

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Self-Limiting Oxides on WSe2 as Controlled Surface Acceptors and Low-Resistance Hole Contacts

Nano letters, 2016-04, Vol.16 (4), p.2720-2727

2016

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Pronounced photogating effect in atomically thin WSe2 with a self-limiting surface oxide layer

Applied physics letters, 2018-04, Vol.112 (18)

2018

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Correlation between Ni Valence and Resistance Modulation on a SmNiO3 Chemical Transistor

ACS applied electronic materials, 2019-01, Vol.1 (1), p.82-87

2019

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Carrier Polarity Control in α‑MoTe2 Schottky Junctions Based on Weak Fermi-Level Pinning

ACS applied materials & interfaces, 2016-06, Vol.8 (23), p.14732-14739

2016

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Spin injection and detection in a graphene lateral spin valve using an yttrium-oxide tunneling barrier

Applied physics express, 2014-08, Vol.7 (8), p.85101

2014

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Electrostatically Reversible Polarity of Ambipolar α‑MoTe2 Transistors

ACS nano, 2015-06, Vol.9 (6), p.5976-5983

2015

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Ambipolar MoTe2 Transistors and Their Applications in Logic Circuits

Advanced materials (Weinheim), 2014-05, Vol.26 (20), p.3263-3269

2014

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Gate-Tunable Thermal Metal–Insulator Transition in VO2 Monolithically Integrated into a WSe2 Field-Effect Transistor

ACS applied materials & interfaces, 2019-01, Vol.11 (3), p.3224-3230

2019

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Gate-Tunable Thermal Metal-Insulator Transition in VO 2 Monolithically Integrated into a WSe 2 Field-Effect Transistor

ACS applied materials & interfaces, 2019-01, Vol.11 (3), p.3224-3230

2019

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Modeling noncontact atomic force microscopy resolution on corrugated surfaces

Beilstein journal of nanotechnology, 2012-03, Vol.3 (1), p.230-237

2012

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Layer-by-Layer Oxidation Induced Electronic Properties in Transition-Metal Dichalcogenides

Journal of physical chemistry. C, 2018-07, Vol.122 (29), p.17001-17007

2018

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Charge Inhomogeneity Determines Oxidative Reactivity of Graphene on Substrates

ACS nano, 2012-09, Vol.6 (9), p.8335-8341

2012

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Self-Limiting Oxides on WSe 2 as Controlled Surface Acceptors and Low-Resistance Hole Contacts

Nano letters, 2016-04, Vol.16 (4), p.2720-2727

2016

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Self-Limiting Layer-by-Layer Oxidation of Atomically Thin WSe2

Anisotropic Etching of Atomically Thin MoS2

Thickness Scaling Effect on Interfacial Barrier and Electrical Contact to Two-Dimensional MoS2 Layers

Strong Enhancement of Raman Scattering from a Bulk-Inactive Vibrational Mode in Few-Layer MoTe2

Electrostatic potential measurement at the Pt/TiO2 interface using electron holography

Step-like resistance changes in VO2 thin films grown on hexagonal boron nitride with in situ optically observable metallic domains

Origin of Noise in Layered MoTe2 Transistors and its Possible Use for Environmental Sensors

Growth of vanadium dioxide thin films on hexagonal boron nitride flakes as transferrable substrates

Broad range thickness identification of hexagonal boron nitride by colors

Virtual substrate method for nanomaterials characterization

Barrier Formation at the Contacts of Vanadium Dioxide and Transition-Metal Dichalcogenides

“The Princess and the Pea” at the Nanoscale: Wrinkling and Delamination of Graphene on Nanoparticles

Self-Limiting Oxides on WSe2 as Controlled Surface Acceptors and Low-Resistance Hole Contacts

Pronounced photogating effect in atomically thin WSe2 with a self-limiting surface oxide layer

Correlation between Ni Valence and Resistance Modulation on a SmNiO3 Chemical Transistor

Carrier Polarity Control in α‑MoTe2 Schottky Junctions Based on Weak Fermi-Level Pinning

Spin injection and detection in a graphene lateral spin valve using an yttrium-oxide tunneling barrier

Electrostatically Reversible Polarity of Ambipolar α‑MoTe2 Transistors

Ambipolar MoTe2 Transistors and Their Applications in Logic Circuits

Gate-Tunable Thermal Metal–Insulator Transition in VO2 Monolithically Integrated into a WSe2 Field-Effect Transistor

Gate-Tunable Thermal Metal-Insulator Transition in VO 2 Monolithically Integrated into a WSe 2 Field-Effect Transistor

Modeling noncontact atomic force microscopy resolution on corrugated surfaces

Layer-by-Layer Oxidation Induced Electronic Properties in Transition-Metal Dichalcogenides

Charge Inhomogeneity Determines Oxidative Reactivity of Graphene on Substrates

Self-Limiting Oxides on WSe 2 as Controlled Surface Acceptors and Low-Resistance Hole Contacts

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