UB Paderborn / Katalog / Suche / in CDI

1 – 24 von 24

Sortiert nach

Two-dimensional numerical analysis of the floating region in SOI MOSFETs

IEEE transactions on electron devices, 1988-07, Vol.35 (7), p.1012-1020

1988

Volltextzugriff (PDF)

Dopant redistribution in silicon-on-sapphire films during thermal annealing

Applied physics letters, 1986-03, Vol.48 (11), p.704-706

1986

Volltextzugriff (PDF)

Defects in high-dose oxygen implanted silicon: a TEM study

Vacuum, 1991, Vol.42 (5), p.367-369

1991

Volltextzugriff (PDF)

Rapid electron-beam isothermal processing of arsenic-implanted NMOS devices

IEEE transactions on electron devices, 1983-11, Vol.30 (11), p.1550-1555

1983

Volltextzugriff (PDF)

Diffusion of boron in heavily doped n- and p-type silicon

Journal of applied physics, 1986, Vol.59 (7), p.2392-2397

1986

Volltextzugriff (PDF)

Growing reliable gate oxides on thick film SOI substrates

Proceedings of 1993 IEEE International SOI Conference, 1993, p.78-79

1993

Volltextzugriff (PDF)

ABCMOS3: A High Precision, High Speed, Modular BiCMOS Process for Analog/Digital Applications

ESSDERC '93: 23rd European solid State Device Research Conference, 1993, p.223-226

1993

Volltextzugriff (PDF)

Shallow junction source/drain regions in CMOS/VLSI technologies

Physica B + C, 1985-01, Vol.129 (1), p.269-274

1985

Volltextzugriff (PDF)

Rapid isothermal processing with electron beams of small-geometry CMOS devices

IEEE transactions on electron devices, 1987-08, Vol.34 (8), p.1688-1693

1987

Volltextzugriff (PDF)

Raman spectroscopy measurement of local stress induced by LOCOS and trench structures in the silicon substrate

ESSDERC '93: 23rd European solid State Device Research Conference, 1993, p.565-568

1993

Volltextzugriff (PDF)

Defects in High-Dose Oxygen Implanted Silicon

Materials science forum, 1989-01, Vol.38-41, p.207-212

1989

Volltextzugriff (PDF)

A novel bipolar/MOS device on SOI wafers for analog BiCMOS applications

Proceedings. IEEE International SOI Conference, 1994, p.47-48

1994

Volltextzugriff (PDF)

HVEM and Electrical Characterisation of SIMOX Structures

MRS proceedings, 1987, Vol.107, Article 129

1987

Volltextzugriff (PDF)

Back gate effects in thick film SOI CMOS devices

1991 IEEE International SOI Conference Proceedings, 1991, p.48-49

1991

Volltextzugriff (PDF)

Buried WSi/sub x/ SOI structures

1995 IEEE International SOI Conference Proceedings, 1995, p.137-138

1995

Volltextzugriff (PDF)

Diffusion and Activation During Rapid Thermal Annealing of Implanted Boron in Silicon

MRS proceedings, 1985, Vol.52, Article 65

1985

Volltextzugriff (PDF)

Novel diffusion effects in a dielectrically isolated BIMOS process using SOI substrates

1990 IEEE SOS/SOI Technology Conference. Proceedings, 1990, p.130-131

1990

Volltextzugriff (PDF)

TEM study of silicon on insulator structures obtained by oxygen ion implantation

Micron and microscopica acta, 1987, Vol.18 (3), p.247-248

1987

Volltextzugriff (PDF)

Optical Flow Sensing and Its Precision Vertical Landing Applications

Sensors for Diagnostics and Monitoring, 2019, p.301-328

1, 2019

Volltextzugriff (PDF)

Carbon Nanofibers as Amperometric Biosensors on a Silicon-Compatible Platform

Technologies for Smart Sensors and Sensor Fusion, 2014, p.61-73

1, 2014

Volltextzugriff (PDF)

Community Partnership Research with the Yakama Indian Nation

Human organization, 1999-07, Vol.58 (2), p.134-141

1999

Volltextzugriff (PDF)

Walking the Journey of Womanhood : Yakama Indian Women and Papanicolaou (Pap) test screening

Public health Nursing, 1996-04, Vol.13 (2), p.141-150

1996

Volltextzugriff (PDF)

Coupled Chemical Reactions in Dynamic Nanometric Confinement: II. Preparation Conditions for Ag2O Membranes within Etched Tracks

Technologies for Smart Sensors and Sensor Fusion, 2014, p.451-461

1, 2014

Volltextzugriff (PDF)

Coupled Chemical Reactions in Dynamic Nanometric Confinement: III. Electronic Characterization of Ag2O Membranes within Etched Tracks and of Their Precursor Structures

Technologies for Smart Sensors and Sensor Fusion, 2014, p.161-175

1, 2014

Volltextzugriff (PDF)

1 – 24 von 24

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(10)
Mit Volltextzugriff
(22)

Publikationsform

Sprache

Englisch
(24)
Japanisch
(1)

Erscheinungsjahr

n.n

Zeitschrift / Serie

5 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Two-dimensional numerical analysis of the floating region in SOI MOSFETs

Dopant redistribution in silicon-on-sapphire films during thermal annealing

Defects in high-dose oxygen implanted silicon: a TEM study

Rapid electron-beam isothermal processing of arsenic-implanted NMOS devices

Diffusion of boron in heavily doped n- and p-type silicon

Growing reliable gate oxides on thick film SOI substrates

ABCMOS3: A High Precision, High Speed, Modular BiCMOS Process for Analog/Digital Applications

Shallow junction source/drain regions in CMOS/VLSI technologies

Rapid isothermal processing with electron beams of small-geometry CMOS devices

Raman spectroscopy measurement of local stress induced by LOCOS and trench structures in the silicon substrate

Defects in High-Dose Oxygen Implanted Silicon

A novel bipolar/MOS device on SOI wafers for analog BiCMOS applications

HVEM and Electrical Characterisation of SIMOX Structures

Back gate effects in thick film SOI CMOS devices

Buried WSi/sub x/ SOI structures

Diffusion and Activation During Rapid Thermal Annealing of Implanted Boron in Silicon

Novel diffusion effects in a dielectrically isolated BIMOS process using SOI substrates

TEM study of silicon on insulator structures obtained by oxygen ion implantation

Optical Flow Sensing and Its Precision Vertical Landing Applications

Carbon Nanofibers as Amperometric Biosensors on a Silicon-Compatible Platform

Community Partnership Research with the Yakama Indian Nation

Walking the Journey of Womanhood : Yakama Indian Women and Papanicolaou (Pap) test screening

Coupled Chemical Reactions in Dynamic Nanometric Confinement: II. Preparation Conditions for Ag2O Membranes within Etched Tracks

Coupled Chemical Reactions in Dynamic Nanometric Confinement: III. Electronic Characterization of Ag2O Membranes within Etched Tracks and of Their Precursor Structures

Suchergebnisse filtern