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Impact of the selenisation temperature on the structural and optical properties of CZTSe absorbers

Solar energy materials and solar cells, 2016-08, Vol.152, p.42-50

2016

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Photoreflectance study of AgGaTe2 single crystals

Physica. B, Condensed matter, 2011-02, Vol.406 (3), p.418-420

2011

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In situ spectroscopic ellipsometry for temperature control in molecular beam epitaxy of HgCdTe

Journal of crystal growth, 2022-12, Vol.599, p.126898, Article 126898

2022

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Excitons in high-quality CuInS2 single crystals

Thin solid films, 2006-07, Vol.511-512 (Complete), p.130-134

2006

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Structural, optical and electronic properties of the wide bandgap topological insulator Bi1.1Sb0.9Te2S

Journal of alloys and compounds, 2022-01, Vol.890, p.161824, Article 161824

2022

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Influence of the copper content on the optical properties of CZTSe thin films

Solar energy materials and solar cells, 2017-08, Vol.168, p.69-77

2017

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STRUCTURAL CHARACTERISTICS AND PHOTOLUMINESCENCE OF THIN FILMS OF Cu.sub.2] SOLID SOLUTIONS

Journal of applied spectroscopy, 2021-03, Vol.88 (1), p.27

2021

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Ellipsometric thermometry in molecular beam epitaxy of mercury cadmium telluride

Infrared physics & technology, 2021-08, Vol.116, p.103793, Article 103793

2021

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Hall-effect studies of modification of HgCdTe surface properties with ion implantation and thermal annealing

Surface & coatings technology, 2020-07, Vol.393, p.125721, Article 125721

2020

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A wide energy range ab initio modeling of the electronic structure of valence states in Cu(In,Ga)Se2: Comparison with photoelectron spectra

Journal of alloys and compounds, 2019-09, Vol.802, p.19-24

2019

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Electrical properties of nBn structures based on HgCdTe grown by molecular beam epitaxy on GaAs substrates

Infrared physics & technology, 2019-11, Vol.102, p.103035, Article 103035

2019

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The relaxation of electrophysical properties HgCdTe epitaxial films affected by plasma of high frequency nanosecond volume discharge in atmospheric-pressure air

Surface & coatings technology, 2020-04, Vol.387, p.125527-5, Article 125527

2020

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Admittance studies of modification of HgCdTe surface properties with ion implantation and thermal annealing

Surface & coatings technology, 2020-06, Vol.392, p.1-5, Article 125760

2020

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Electronic and structural characterisation of Cu3BiS3 thin films for the absorber layer of sustainable photovoltaics

Thin solid films, 2014-07, Vol.562, p.195-199

2014

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Electrical characterization of insulator-semiconductor systems based on graded band gap MBE HgCdTe with atomic layer deposited Al2O3 films for infrared detector passivation

Vacuum, 2018-12, Vol.158, p.136-140

2018

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Electrical properties of the Hg0.7Cd0.3Te films grown by MBE method on Si(0 1 3) substrates

Infrared physics & technology, 2018-11, Vol.94, p.11-15

2018

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Electrophysical properties of [Cd.sub.x][Hg.sub.1-x]Te substrates

Physics of the solid state, 2016-04, p.641

2016

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Analysis of carrier species in arsenic-implanted p- and n-type Hg0.7Cd0.3Te

Infrared physics & technology, 2021-05, Vol.114, p.103665, Article 103665

2021

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Photodiodes based on p-on-n junctions formed in MBE-grown n-type MCT absorber layers for the spectral region 8 to 11 μm

Infrared physics & technology, 2020-03, Vol.105, p.103182, Article 103182

2020

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Direct comparison of the results of arsenic ion implantation in n– and p–type Hg0.8Cd0.2Te

Infrared physics & technology, 2020-09, Vol.109, p.103388, Article 103388

2020

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Arsenic-ion implantation-induced defects in HgCdTe films studied with Hall-effect measurements and mobility spectrum analysis

Infrared physics & technology, 2019-05, Vol.98, p.230-235

2019

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Effects of selenisation temperature on photoluminescence and photoluminescence excitation spectra of ZnO/CdS/Cu2ZnSnSe4/Mo/glass

Thin solid films, 2019-02, Vol.672, p.146-151

2019

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Optical spectroscopy studies of Cu2ZnSnSe4 thin films

Thin solid films, 2015-05, Vol.582, p.154-157

2015

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Effects of irradiation of ZnO/CdS/Cu2ZnSnSe4/Mo/glass solar cells by 10 MeV electrons on photoluminescence spectra

Materials science in semiconductor processing, 2021-01, Vol.121, p.105301, Article 105301

2021

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Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates

Infrared physics & technology, 2017-12, Vol.87, p.129-133

2017

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Impact of the selenisation temperature on the structural and optical properties of CZTSe absorbers

Photoreflectance study of AgGaTe2 single crystals

In situ spectroscopic ellipsometry for temperature control in molecular beam epitaxy of HgCdTe

Excitons in high-quality CuInS2 single crystals

Structural, optical and electronic properties of the wide bandgap topological insulator Bi1.1Sb0.9Te2S

Influence of the copper content on the optical properties of CZTSe thin films

STRUCTURAL CHARACTERISTICS AND PHOTOLUMINESCENCE OF THIN FILMS OF Cu.sub.2] SOLID SOLUTIONS

Ellipsometric thermometry in molecular beam epitaxy of mercury cadmium telluride

Hall-effect studies of modification of HgCdTe surface properties with ion implantation and thermal annealing

A wide energy range ab initio modeling of the electronic structure of valence states in Cu(In,Ga)Se2: Comparison with photoelectron spectra

Electrical properties of nBn structures based on HgCdTe grown by molecular beam epitaxy on GaAs substrates

The relaxation of electrophysical properties HgCdTe epitaxial films affected by plasma of high frequency nanosecond volume discharge in atmospheric-pressure air

Admittance studies of modification of HgCdTe surface properties with ion implantation and thermal annealing

Electronic and structural characterisation of Cu3BiS3 thin films for the absorber layer of sustainable photovoltaics

Electrical characterization of insulator-semiconductor systems based on graded band gap MBE HgCdTe with atomic layer deposited Al2O3 films for infrared detector passivation

Electrical properties of the Hg0.7Cd0.3Te films grown by MBE method on Si(0 1 3) substrates

Electrophysical properties of [Cd.sub.x][Hg.sub.1-x]Te substrates

Analysis of carrier species in arsenic-implanted p- and n-type Hg0.7Cd0.3Te

Photodiodes based on p-on-n junctions formed in MBE-grown n-type MCT absorber layers for the spectral region 8 to 11 μm

Direct comparison of the results of arsenic ion implantation in n– and p–type Hg0.8Cd0.2Te

Arsenic-ion implantation-induced defects in HgCdTe films studied with Hall-effect measurements and mobility spectrum analysis

Effects of selenisation temperature on photoluminescence and photoluminescence excitation spectra of ZnO/CdS/Cu2ZnSnSe4/Mo/glass

Optical spectroscopy studies of Cu2ZnSnSe4 thin films

Effects of irradiation of ZnO/CdS/Cu2ZnSnSe4/Mo/glass solar cells by 10 MeV electrons on photoluminescence spectra

Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates

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