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What is the real value of diffusion length in GaN?

Journal of alloys and compounds, 2015-04, Vol.627, p.344-351

Yakimov, E.B.

2015

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Recombination and optical properties of dislocations gliding at room temperature in GaN under applied stress

Journal of alloys and compounds, 2019-03, Vol.776, p.181-186

2019

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Deep traps determining the non-radiative lifetime and defect band yellow luminescence in n-GaN

Journal of alloys and compounds, 2016-11, Vol.686, p.1044-1052

2016

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Effect of low-energy electron irradiation on the cathodoluminescence of multiple quantum well (MQW) InGaN/GaN structures

Solid state communications, 2011-02, Vol.151 (3), p.208-211

2011

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Low energy electron irradiation effect on optical and electrical properties of InGaN/GaN multiple quantum well structures

International journal of nanoparticles, 2013, Vol.6 (2/3), p.191

Yakimov, E.B.

2013

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Properties of nanopillar structures prepared by dry etching of undoped GaN grown by maskless epitaxial overgrowth

Journal of alloys and compounds, 2013-03, Vol.554, p.258-263

2013

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Radiation-enhanced dislocation glide in 4H-SiC at low temperatures

Journal of alloys and compounds, 2020-10, Vol.837, p.155470, Article 155470

2020

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An application of gold diffusion for defect investigation in silicon

Physica. B, Condensed matter, 2009-12, Vol.404 (23-24), p.4681-4684

2009

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On the nature of photosensitivity gain in Ga2O3 Schottky diode detectors: Effects of hole trapping by deep acceptors

Journal of alloys and compounds, 2021-10, Vol.879, p.160394, Article 160394

2021

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Effect of low energy electron beam irradiation on Shockley partial dislocations bounding stacking faults introduced by plastic deformation in 4H-SiC in its brittle temperature range

Superlattices and microstructures, 2016-11, Vol.99, p.226-230

2016

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Structural, electrical and luminescent characteristics of ultraviolet light emitting structures grown by hydride vapor phase epitaxy

Modern electronic materials, 2017-03, Vol.3 (1), p.32-39

2017

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Two-dimensional hole gas formation at the κ-Ga2O3 /AlN heterojunction interface

Journal of alloys and compounds, 2023-03, Vol.936, p.168315, Article 168315

2023

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Betavoltaic battery performance: Comparison of modeling and experiment

Applied radiation and isotopes, 2018-07, Vol.137, p.184-189

2018

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Study of the properties of silicon-based semiconductor converters for beta voltaic cells

Semiconductors (Woodbury, N.Y.), 2015-06, p.746

2015

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Degradation by sidewall recombination centers in GaN blue micro-LEDs at diameters<30 µm

Journal of alloys and compounds, 2022-11, Vol.921, p.166072, Article 166072

2022

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GaAs diodes for TiT2-based betavoltaic cells

Applied radiation and isotopes, 2022-01, Vol.179, p.110030-110030, Article 110030

2022

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Effect of copper on the recombination activity of extended defects in silicon

Semiconductors (Woodbury, N.Y.), 2015-06, Vol.49 (6), p.716-719

2015

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Electrical, optical, and structural properties of GaN films prepared by hydride vapor phase epitaxy

Journal of alloys and compounds, 2014-12, Vol.617, p.200-206

2014

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Indium doping-induced change in the photoconduction spectra of o-TaS3

Physica. B, Condensed matter, 2015-03, Vol.460, p.180-184

2015

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Effect of low-energy electron irradiation on the optical properties of structures containing multiple InGaN/GaN quantum well

Semiconductors (Woodbury, N.Y.), 2015-02, Vol.49 (2), p.143-148

2015

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Comparative Study of the Spectral and Structural Properties of Eu[Al.sub.3][.sub.4] Single Crystals with Different Morphologies

Physics of the solid state, 2017-12, Vol.59 (12), p.2423

2017

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Comparative Study of the Spectral and Structural Properties of Eu[Al.sub.3]

Physics of the solid state, 2017-12, Vol.59 (12), p.2423

2017

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Spatial Distribution of the Dislocation Trails in Silicon

Solid state phenomena, 2015-10, Vol.242, p.155-159

2015

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Development of betavoltaic cell technology production based on microchannel silicon and its electrical parameters evaluation

Applied radiation and isotopes, 2017-03, Vol.121, p.71-75

2017

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EBIC and LBIC studies of the properties of extended defects in plastically deformed silicon

Semiconductors (Woodbury, N.Y.), 2015-06, Vol.49 (6), p.720-723

2015

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What is the real value of diffusion length in GaN?

Recombination and optical properties of dislocations gliding at room temperature in GaN under applied stress

Deep traps determining the non-radiative lifetime and defect band yellow luminescence in n-GaN

Effect of low-energy electron irradiation on the cathodoluminescence of multiple quantum well (MQW) InGaN/GaN structures

Low energy electron irradiation effect on optical and electrical properties of InGaN/GaN multiple quantum well structures

Properties of nanopillar structures prepared by dry etching of undoped GaN grown by maskless epitaxial overgrowth

Radiation-enhanced dislocation glide in 4H-SiC at low temperatures

An application of gold diffusion for defect investigation in silicon

On the nature of photosensitivity gain in Ga2O3 Schottky diode detectors: Effects of hole trapping by deep acceptors

Effect of low energy electron beam irradiation on Shockley partial dislocations bounding stacking faults introduced by plastic deformation in 4H-SiC in its brittle temperature range

Structural, electrical and luminescent characteristics of ultraviolet light emitting structures grown by hydride vapor phase epitaxy

Two-dimensional hole gas formation at the κ-Ga2O3 /AlN heterojunction interface

Betavoltaic battery performance: Comparison of modeling and experiment

Study of the properties of silicon-based semiconductor converters for beta voltaic cells

Degradation by sidewall recombination centers in GaN blue micro-LEDs at diameters<30 µm

GaAs diodes for TiT2-based betavoltaic cells

Effect of copper on the recombination activity of extended defects in silicon

Electrical, optical, and structural properties of GaN films prepared by hydride vapor phase epitaxy

Indium doping-induced change in the photoconduction spectra of o-TaS3

Effect of low-energy electron irradiation on the optical properties of structures containing multiple InGaN/GaN quantum well

Comparative Study of the Spectral and Structural Properties of Eu[Al.sub.3][.sub.4] Single Crystals with Different Morphologies

Comparative Study of the Spectral and Structural Properties of Eu[Al.sub.3]

Spatial Distribution of the Dislocation Trails in Silicon

Development of betavoltaic cell technology production based on microchannel silicon and its electrical parameters evaluation

EBIC and LBIC studies of the properties of extended defects in plastically deformed silicon

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