UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 41

Sortiert nach

Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects

Journal of applied physics, 2021-10, Vol.130 (16)

2021

Volltextzugriff (PDF)

Electrical characteristics of gated‐anode diodes based on normally‐off GaN HEMT structures for rectenna applications

Electronics letters, 2021-10, Vol.57 (21), p.810-812

2021

Volltextzugriff (PDF)

Mode-evolution-based polarization rotator-splitter design via simple fabrication process

Optics express, 2012-04, Vol.20 (9), p.10163-10169

2012

Volltextzugriff (PDF)

Effect of high-temperature annealing for single-Ni-layer gate in AlGaN/GaN high-electron-mobility transistors

Japanese Journal of Applied Physics, 2016-05, Vol.55 (5S), p.5

2016

Volltextzugriff (PDF)

Normally-off AlGaN/GaN high-electron-mobility transistor using digital etching technique

Japanese Journal of Applied Physics, 2015-06, Vol.54 (6S1), p.6

2015

Volltextzugriff (PDF)

Analysis of Single-Photon-Detection Characteristics of GaInAs/InP Avalanche Photodiodes

IEEE journal of quantum electronics, 2010-10, Vol.46 (10), p.1444-1449

2010

Volltextzugriff (PDF)

Design and Characteristics of Guardring-Free Planar AlInAs Avalanche Photodiodes

Journal of lightwave technology, 2009-04, Vol.27 (8), p.1011-1017

2009

Volltextzugriff (PDF)

Degradation Mode Analysis on Highly Reliable Guardring-Free Planar InAlAs Avalanche Photodiodes

Journal of lightwave technology, 2007-12, Vol.25 (12), p.3686-3693

2007

Volltextzugriff (PDF)

AlGaN Channel HEMT With Extremely High Breakdown Voltage

IEEE transactions on electron devices, 2013-03, Vol.60 (3), p.1046-1053

2013

Volltextzugriff (PDF)

AlGaN/GaN-Based Multimetal Gated High-Electron-Mobility Transistor With Improved Linearity

IEEE transactions on electron devices, 2023-11, Vol.70 (11), p.5570-5576

2023

Volltextzugriff (PDF)

Look out III–V

Nature photonics, 2009-01, Vol.3 (1), p.7-8

2009

Volltextzugriff (PDF)

Silicon photonics Look out III-V

Nature photonics, 2009-01, Vol.3 (1), p.7-8

2009

Volltextzugriff (PDF)

An MMI-based wavelength combiner employing non-uniform refractive index distribution

Optics express, 2014-04, Vol.22 (7), p.8533-8540

2014

Volltextzugriff (PDF)

Trapping Phenomena in GaN HEMTs with Fe- and C-doped Buffer

2022 Device Research Conference (DRC), 2022, p.1-2

2022

Volltextzugriff (PDF)

Compact modeling of gate leakage phenomenon in GaN HEMTs

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2020, p.225-228

2020

Volltextzugriff (PDF)

An MMI-based polarization splitter using patterned metal and tilted joint

Optics express, 2012-12, Vol.20 (26), p.B371-B376

2012

Volltextzugriff (PDF)

Submicron local and time-dependent thermal resistance characterization of GaN HEMTs

2018 34th Thermal Measurement, Modeling & Management Symposium (SEMI-THERM), 2018, p.165-169

2018

Volltextzugriff (PDF)

Application of numerical optimization to the design of InP-based wavelength combiners

Optics communications, 2014-07, Vol.322, p.131-136

2014

Volltextzugriff (PDF)

Enhancement of Drain Current by an AlN Spacer Layer Insertion in AlGaN/GaN High-Electron-Mobility Transistors with Si-Ion-Implanted Source/Drain Contacts

Japanese Journal of Applied Physics, 2011-06, Vol.50 (6), p.064101-064101-7

2011

Volltextzugriff (PDF)

Simple planar structure for high-performance AlInAs avalanche photodiodes

IEEE photonics technology letters, 2006-01, Vol.18 (1), p.76-78

2006

Volltextzugriff (PDF)

Investigation of guardring-free planar AlInAs avalanche photodiodes

IEEE photonics technology letters, 2006-06, Vol.18 (11), p.1264-1266

2006

Volltextzugriff (PDF)

AlGaN Channel HEMT with Extremely High Breakdown Voltage

MRS proceedings, 2011, Vol.1324 (1), Article mrss11-1324-d11-01

2011

Volltextzugriff (PDF)

Enhancement of Drain Current by an AlN Spacer Layer Insertion in AlGaN/GaN High-Electron-Mobility Transistors with Si-Ion-Implanted Source/Drain Contacts

Japanese Journal of Applied Physics, 2011-06, Vol.50 (6R), p.64101

2011

Volltextzugriff (PDF)

Fermi-Level Pinning Effect in Gate Region: A Case Study of Multimetal Gated AlGaN/GaN HEMT for High RF Linearity

2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2024, p.1-3

2024

Volltextzugriff (PDF)

Guardring-Free Planar AlInAs Avalanche Photodiodes for 2.5-Gb/s Receivers With High Sensitivity

IEEE photonics technology letters, 2007-05, Vol.19 (10), p.765-767

2007

Volltextzugriff (PDF)

1 – 25 von 41

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(31)
Mit Volltextzugriff
(34)

Publikationsform

Artikel
(35)
Tagungsberichte
(6)

Sprache

Englisch
(40)
Japanisch
(14)

Erscheinungsjahr

n.n

Thema

Science & Technology
(34)
Physical Sciences
(22)
Technology
(15)
Engineering
(14)
Engineering, Electrical & Electronic
(14)
Optics
(13)
Physics
(13)
Physics, Applied
(13)
Life Sciences & Biomedicine
(8)
Avalanche Photodiodes
(6)
Hemts
(6)
Indium Phosphide
(6)
Applied Sciences
(5)
Electronics
(5)
Exact Sciences And Technology
(5)
Female
(5)
Logic Gates
(5)
Photodiodes
(5)
Atomic And Molecular Physics, And Optics
(4)
Avalanches
(4)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(1)

Menü

Weitere Dienste

Einstellungen

Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects

Electrical characteristics of gated‐anode diodes based on normally‐off GaN HEMT structures for rectenna applications

Mode-evolution-based polarization rotator-splitter design via simple fabrication process

Effect of high-temperature annealing for single-Ni-layer gate in AlGaN/GaN high-electron-mobility transistors

Normally-off AlGaN/GaN high-electron-mobility transistor using digital etching technique

Analysis of Single-Photon-Detection Characteristics of GaInAs/InP Avalanche Photodiodes

Design and Characteristics of Guardring-Free Planar AlInAs Avalanche Photodiodes

Degradation Mode Analysis on Highly Reliable Guardring-Free Planar InAlAs Avalanche Photodiodes

AlGaN Channel HEMT With Extremely High Breakdown Voltage

AlGaN/GaN-Based Multimetal Gated High-Electron-Mobility Transistor With Improved Linearity

Look out III–V

Silicon photonics Look out III-V

An MMI-based wavelength combiner employing non-uniform refractive index distribution

Trapping Phenomena in GaN HEMTs with Fe- and C-doped Buffer

Compact modeling of gate leakage phenomenon in GaN HEMTs

An MMI-based polarization splitter using patterned metal and tilted joint

Submicron local and time-dependent thermal resistance characterization of GaN HEMTs

Application of numerical optimization to the design of InP-based wavelength combiners

Enhancement of Drain Current by an AlN Spacer Layer Insertion in AlGaN/GaN High-Electron-Mobility Transistors with Si-Ion-Implanted Source/Drain Contacts

Simple planar structure for high-performance AlInAs avalanche photodiodes

Investigation of guardring-free planar AlInAs avalanche photodiodes

AlGaN Channel HEMT with Extremely High Breakdown Voltage

Enhancement of Drain Current by an AlN Spacer Layer Insertion in AlGaN/GaN High-Electron-Mobility Transistors with Si-Ion-Implanted Source/Drain Contacts

Fermi-Level Pinning Effect in Gate Region: A Case Study of Multimetal Gated AlGaN/GaN HEMT for High RF Linearity

Guardring-Free Planar AlInAs Avalanche Photodiodes for 2.5-Gb/s Receivers With High Sensitivity

Suchergebnisse filtern