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Growth of III-N/graphene heterostructures in single vapor phase epitaxial process

Journal of crystal growth, 2018-12, Vol.504, p.1-6

2018

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Peculiarities of strain relaxation in linearly graded InxGa1−xAs/GaAs(001) metamorphic buffer layers grown by molecular beam epitaxy

Journal of crystal growth, 2016-12, Vol.455, p.83-89

2016

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High growth rate MOVPE of Al(Ga)N in planetary reactor

Journal of crystal growth, 2012-08, Vol.352 (1), p.209-213

2012

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A stable suspension of single ultrananocrystalline diamond particles

Diamond and related materials, 2005-11, Vol.14 (11), p.1765-1769

2005

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Role of strain in growth kinetics of AlGaN layers during plasma-assisted molecular beam epitaxy

Journal of crystal growth, 2011-05, Vol.323 (1), p.68-71

2011

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Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs

Semiconductors (Woodbury, N.Y.), 2016-09, Vol.50 (9), p.1241-1247

2016

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A study of accelerated radiation damage effects in PuO2 and gadolinia-stabilized cubic zirconia, Zr0.79Gd0.14Pu0.07O1.93, doped with 238Pu

Journal of nuclear materials, 2015-12, Vol.467, p.534-536

2015

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Formation of the Structured Indium Tin Oxide Films by Magnetron Sputtering

Thin solid films, 2023-06, Vol.774, p.139848, Article 139848

2023

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Influence of gadolinium tantalum niobates doped with Eu3+ ions structural properties on luminescence spectrum features

Journal of luminescence, 2022-12, Vol.252, p.119281, Article 119281

2022

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Hierarchically porous silica particles: One-pot synthesis, tunable hydrophilic/hydrophobic properties, prospects for selective oil adsorption

Colloids and surfaces. A, Physicochemical and engineering aspects, 2024-02, Vol.683, p.132976, Article 132976

2024

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Modified radiative lifetime of Eu3+ ions in Y2O3 thin films on Al2O3 substrates

Journal of luminescence, 2021-02, Vol.230, p.117754, Article 117754

2021

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Preparation and Characterization of Gadolinium Niobate Tantalates Activated with Europium Ions

Inorganic materials, 2021-04, Vol.57 (4), p.383-391

2021

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Study of GaN doping with carbon from propane in a wide range of MOVPE conditions

Journal of crystal growth, 2016-09, Vol.449, p.108-113

2016

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Structure of nanodiamonds prepared by laser synthesis

Physics of the solid state, 2013-08, Vol.55 (8), p.1747-1753

2013

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Fast AlGaN growth in a whole composition range in planetary reactor

Journal of crystal growth, 2013-05, Vol.370, p.7-11

2013

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The synthesis of clusters of iron oxides in mesopores of monodisperse spherical silica particles

Physics of the solid state, 2017-08, Vol.59 (8), p.1623-1628

2017

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The influence of temperature treatment on the formation of Ni-based Schottky diodes and ohmic contacts to n-6H-SiC

Materials science & engineering. B, Solid-state materials for advanced technology, 1997-04, Vol.46 (1), p.254-258

1997

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Optical Properties of AlGaAs/GaAs Resonant Bragg Structure at the Second Quantum State

Semiconductors (Woodbury, N.Y.), 2018-04, Vol.52 (4), p.447-451

2018

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Investigation of the Modified Structure of a Quantum Cascade Laser

Semiconductors (Woodbury, N.Y.), 2018-01, Vol.52 (1), p.126-130

2018

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Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice

Journal of crystal growth, 2011-01, Vol.315 (1), p.267-271

2011

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Formation of three-dimensional arrays of magnetic clusters NiO, [Co.sub.3][O.sub.4], and Ni[Co.sub.2][O.sub.4] by the matrix method

Physics of the solid state, 2016-06, Vol.58 (6), p.1216

2016

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Effect of annealing on the nonequilibrium carrier lifetime in GaAs grown at low temperatures

Semiconductors (Woodbury, N.Y.), 2013-08, Vol.47 (8), p.1137-1140

2013

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Fröhlich resonance in the AsSb/AlGaAs system

Physics of the solid state, 2014-10, Vol.56 (10), p.1952-1956

2014

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Nanostructured [Ge.sub.2][Sb.sub.2][Te.sub.5] chalcogenide films produced by laser electrodispersion

Semiconductors (Woodbury, N.Y.), 2014-12, Vol.48 (12), p.1567

2014

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Effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAIn heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis

Semiconductors (Woodbury, N.Y.), 2016-10, Vol.50 (10), p.1383

2016

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Growth of III-N/graphene heterostructures in single vapor phase epitaxial process

Peculiarities of strain relaxation in linearly graded InxGa1−xAs/GaAs(001) metamorphic buffer layers grown by molecular beam epitaxy

High growth rate MOVPE of Al(Ga)N in planetary reactor

A stable suspension of single ultrananocrystalline diamond particles

Role of strain in growth kinetics of AlGaN layers during plasma-assisted molecular beam epitaxy

Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs

A study of accelerated radiation damage effects in PuO2 and gadolinia-stabilized cubic zirconia, Zr0.79Gd0.14Pu0.07O1.93, doped with 238Pu

Formation of the Structured Indium Tin Oxide Films by Magnetron Sputtering

Influence of gadolinium tantalum niobates doped with Eu3+ ions structural properties on luminescence spectrum features

Hierarchically porous silica particles: One-pot synthesis, tunable hydrophilic/hydrophobic properties, prospects for selective oil adsorption

Modified radiative lifetime of Eu3+ ions in Y2O3 thin films on Al2O3 substrates

Preparation and Characterization of Gadolinium Niobate Tantalates Activated with Europium Ions

Study of GaN doping with carbon from propane in a wide range of MOVPE conditions

Structure of nanodiamonds prepared by laser synthesis

Fast AlGaN growth in a whole composition range in planetary reactor

The synthesis of clusters of iron oxides in mesopores of monodisperse spherical silica particles

The influence of temperature treatment on the formation of Ni-based Schottky diodes and ohmic contacts to n-6H-SiC

Optical Properties of AlGaAs/GaAs Resonant Bragg Structure at the Second Quantum State

Investigation of the Modified Structure of a Quantum Cascade Laser

Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice

Formation of three-dimensional arrays of magnetic clusters NiO, [Co.sub.3][O.sub.4], and Ni[Co.sub.2][O.sub.4] by the matrix method

Effect of annealing on the nonequilibrium carrier lifetime in GaAs grown at low temperatures

Fröhlich resonance in the AsSb/AlGaAs system

Nanostructured [Ge.sub.2][Sb.sub.2][Te.sub.5] chalcogenide films produced by laser electrodispersion

Effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAIn heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis

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