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Ti/Au/Al/Ni/Au Low Contact Resistance and Sharp Edge Acuity for Highly Scalable AlGaN/GaN HEMTs

IEEE electron device letters, 2019-01, Vol.40 (1), p.67-70

2019

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Thermally Grown TiO2 and Al2O3 for GaN-Based MOS-HEMTs

IEEE transactions on electron devices, 2018-09, Vol.65 (9), p.3725-3731

2018

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Role of Bleomycin Sclerotherapy as a Non-surgical Method for the Treatment of Cystic Hygroma of Head and Neck Region-an Institutional Study

Indian journal of otolaryngology, and head, and neck surgery, 2022-10, Vol.74 (Suppl 2), p.2553-2559

2022

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Eltrombopag therapy in newly diagnosed steroid non-responsive ITP patients

International journal of hematology, 2014-04, Vol.99 (4), p.413-417

2014

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Utility of contrast-enhanced ultrasound in differentiation between benign mural lesions and adenocarcinoma of gallbladder

Journal of medical ultrasound, 2020-07, Vol.28 (3), p.143-150

2020

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Inheritance pattern of okra enation leaf curl disease among cultivated species and its relationship with biochemical parameters

Journal of genetics, 2020-12, Vol.99 (1), Article 84

2020

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A Clinical Study of Second Branchial Cleft Anomalies: Our Experience in a Teaching Hospital in Northern India

Journal of head & neck physicians and surgeons, 2020-07, Vol.8 (2), p.96-101

2020

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Calcitonin gene- and parathyroid hormone-related peptides in normotensive and preeclamptic pregnancies: a nested case–control study

Archives of gynecology and obstetrics, 2014-11, Vol.290 (5), p.897-903

2014

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Role of Inferior Vena Cava (IVC) Recanalization in Patients with Back Pain, Secondary to IVC Obstruction in Budd-Chiari Syndrome

Diagnostics (Basel), 2023-01, Vol.13 (3), p.438

2023

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Low-field mobility in an electrostatically confined 2D rectangular nanowire: effect of density of states and phonon confinement

Nanotechnology, 2021-11, Vol.32 (45), p.455202

2021

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Roughness as an Important Metric for Si and SiGe Epi Growth

2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2024, p.1-3

2024

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Impact of Relative Gate Position on DC and RF Characteristics of High Performance AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.4141-4146

2020

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Thermally grown Nb-oxide for GaN-based MOS-diodes

Applied surface science, 2022-01, Vol.572, p.151332, Article 151332

2022

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Improvements From SiC Substrate Thinning in AlGaN/GaN HEMTs: Disparate Effects on Contacts, Access and Channel Regions

IEEE electron device letters, 2021-05, Vol.42 (5), p.684-687

2021

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High‐Performance GaN HEMTs with I ON/I OFF ≈1010 and Gate Leakage Current <10−11 A mm−1 Using Ta2O5 Dielectric

Physica status solidi. A, Applications and materials science, 2022-06, Vol.219 (12), p.n/a

2022

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Al2O3 formed by post plasma oxidation of Al as a Gate dielectric for AlGaN/GaN MIS-HEMTs

Applied surface science, 2019-07, Vol.481, p.219-225

2019

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Development and Validation of Tool for Assessment of Knowledge About Childhood Hypertension Among Final Year Medical Student

Clinical pediatrics, 2023-12, p.99228231214887-99228231214887

2023

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High‐Performance GaN HEMTs with ION/IOFF ≈1010 and Gate Leakage Current <10−11Amm−1 Using Ta2O5 Dielectric

Physica status solidi. A, Applications and materials science, 2022-06, Vol.219 (12)

2022

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High‐Performance GaN HEMTs with I ON / I OFF ≈10 10 and Gate Leakage Current <10 −11 A mm −1 Using Ta 2 O 5 Dielectric

Physica status solidi. A, Applications and materials science, 2022-06, Vol.219 (12)

2022

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Reduced Contact Resistance and Improved Transistor Performance by Surface Plasma Treatment on Ohmic Regions in AlGaN/GaN HEMT Heterostructures

Physica status solidi. A, Applications and materials science, 2018-05, Vol.215 (9), p.n/a

2018

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Electrical properties of Bi2TiO5 ceramic

Journal of alloys and compounds, 2010-02, Vol.490 (1-2), p.589-593

2010

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Phenotypic and Genotypic Spectrum of Children with Autosomal Recessive Hyperimmunoglobulin E Syndrome Caused by DOCK8 Mutation: A Systematic Review of Case Reports

Indian Pediatrics Case Reports, 2024-07, Vol.4 (3), p.182-191

2024

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Knowledge level of Farmers on Recommended Maize Cultivation Technologies in Chhindwara, District M.P. India

International journal of current microbiology and applied sciences, 2022-11, Vol.11 (11), p.113-116

2022

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The Enigma that is Politics in India

Studies in Indian politics, 2013-06, Vol.1 (1), p.13-20

Yadav, Yogendra

2013

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Improved RF-DC characteristics and reduced gate leakage in GaN MOS-HEMTs using thermally grown Nb 2 O 5 gate dielectric

Physica scripta, 2023-01, Vol.98 (1), p.15805

2023

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Ti/Au/Al/Ni/Au Low Contact Resistance and Sharp Edge Acuity for Highly Scalable AlGaN/GaN HEMTs

Thermally Grown TiO2 and Al2O3 for GaN-Based MOS-HEMTs

Role of Bleomycin Sclerotherapy as a Non-surgical Method for the Treatment of Cystic Hygroma of Head and Neck Region-an Institutional Study

Eltrombopag therapy in newly diagnosed steroid non-responsive ITP patients

Utility of contrast-enhanced ultrasound in differentiation between benign mural lesions and adenocarcinoma of gallbladder

Inheritance pattern of okra enation leaf curl disease among cultivated species and its relationship with biochemical parameters

A Clinical Study of Second Branchial Cleft Anomalies: Our Experience in a Teaching Hospital in Northern India

Calcitonin gene- and parathyroid hormone-related peptides in normotensive and preeclamptic pregnancies: a nested case–control study

Role of Inferior Vena Cava (IVC) Recanalization in Patients with Back Pain, Secondary to IVC Obstruction in Budd-Chiari Syndrome

Low-field mobility in an electrostatically confined 2D rectangular nanowire: effect of density of states and phonon confinement

Roughness as an Important Metric for Si and SiGe Epi Growth

Impact of Relative Gate Position on DC and RF Characteristics of High Performance AlGaN/GaN HEMTs

Thermally grown Nb-oxide for GaN-based MOS-diodes

Improvements From SiC Substrate Thinning in AlGaN/GaN HEMTs: Disparate Effects on Contacts, Access and Channel Regions

High‐Performance GaN HEMTs with I ON/I OFF ≈1010 and Gate Leakage Current <10−11 A mm−1 Using Ta2O5 Dielectric

Al2O3 formed by post plasma oxidation of Al as a Gate dielectric for AlGaN/GaN MIS-HEMTs

Development and Validation of Tool for Assessment of Knowledge About Childhood Hypertension Among Final Year Medical Student

High‐Performance GaN HEMTs with ION/IOFF ≈1010 and Gate Leakage Current <10−11Amm−1 Using Ta2O5 Dielectric

High‐Performance GaN HEMTs with I ON / I OFF ≈10 10 and Gate Leakage Current <10 −11 A mm −1 Using Ta 2 O 5 Dielectric

Reduced Contact Resistance and Improved Transistor Performance by Surface Plasma Treatment on Ohmic Regions in AlGaN/GaN HEMT Heterostructures

Electrical properties of Bi2TiO5 ceramic

Phenotypic and Genotypic Spectrum of Children with Autosomal Recessive Hyperimmunoglobulin E Syndrome Caused by DOCK8 Mutation: A Systematic Review of Case Reports

Knowledge level of Farmers on Recommended Maize Cultivation Technologies in Chhindwara, District M.P. India

The Enigma that is Politics in India

Improved RF-DC characteristics and reduced gate leakage in GaN MOS-HEMTs using thermally grown Nb 2 O 5 gate dielectric

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