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Features of spectral properties of Sm3+ complexes with dithia- and diselenophosphinate ligands

Spectrochimica acta. Part A, Molecular and biomolecular spectroscopy, 2016-06, Vol.163, p.134-139

2016

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UPCONVERSION LUMINESCENCE OF [Er.sup.3+] IONS FROM BARIUM TITANATE XEROGEL POWDER AND TARGET FABRICATED BY EXPLOSIVE COMPACTION METHOD

Journal of applied spectroscopy, 2022-05, Vol.89 (2), p.238

2022

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Strain-driven alloying: effect on sizes, shape and photoluminescence of GeSi/Si(001) self-assembled islands

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-02, Vol.89 (1), p.62-65

2002

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On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates

Semiconductors (Woodbury, N.Y.), 2017-05, Vol.51 (5), p.663-666

2017

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Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates

Semiconductors (Woodbury, N.Y.), 2017-11, Vol.51 (11), p.1527-1530

2017

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Excitation spectra of photoluminescence and its kinetics in structures with self-assembled Ge:Si nanoislands

Semiconductors (Woodbury, N.Y.), 2015-11, Vol.49 (11), p.1410-1414

2015

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Effect of surface Si-Si dimers on photoluminescence of silicon nanocrystals in the silicon dioxide matrix

Journal of experimental and theoretical physics, 2014-05, Vol.118 (5), p.728-734

2014

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Time-resolved photoluminescence from self-assembled Ge(Si) islands in multilayer SiGe/Si and SiGe/SOI structures

Semiconductors (Woodbury, N.Y.), 2013-11, Vol.47 (11), p.1496-1499

2013

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Luminescent properties of MBE-grown Si:Er/SOI structures

Journal of luminescence, 2012-12, Vol.132 (12), p.3148-3150

2012

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Determination of the excitation cross section of photoluminescence from an Er ion in the case of homogeneous and inhomogeneous optical excitation

Semiconductors (Woodbury, N.Y.), 2012-11, Vol.46 (11), p.1372-1375

2012

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Guiding effect of quantum wells in semiconductor lasers

Quantum electronics (Woodbury, N.Y.), 2013-01, Vol.43 (5), p.401-406, Article 401

2013

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Terahertz-range spontaneous emission under the optical excitation of donors in uniaxially stressed bulk silicon and SiGe/Si heterostructures

Semiconductors (Woodbury, N.Y.), 2015-01, Vol.49 (1), p.13-18

2015

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Mechanism of the subband excitation of photoluminescence from erbium ions in silicon under high-intensity optical pumping

Semiconductors (Woodbury, N.Y.), 2012-11, Vol.46 (11), p.1407-1410

2012

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Band-to-band and direct optical excitation of Er in silicon: Comparison of kinetics, temperature dependence of erbium PL

Physica. B, Condensed matter, 2009-12, Vol.404 (23-24), p.4601-4603

2009

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Photoluminescence line width of self-assembled Ge(Si) islands arranged between strained Si layers

Semiconductors (Woodbury, N.Y.), 2011-02, Vol.45 (2), p.198-202

2011

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Growth and photoluminescence of self-assembled islands obtained during the deposition of Ge on a strained SiGe layer

Optical materials, 2005-02, Vol.27 (5), p.818-821

2005

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Effect of irradiation on the luminescence properties of low-dimensional SiGe/Si(001) heterostructures

Semiconductors (Woodbury, N.Y.), 2010-03, Vol.44 (3), p.329-334

2010

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Effect of growth temperature on photoluminescence of Ge(Si) self-assembled islands embedded in a tensile-strained Si layer

Thin solid films, 2008-11, Vol.517 (1), p.385-387

2008

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Special features of the excitation spectra and kinetics of photoluminescence of the [Si.sub.1 - x][Ge.sub.x]:Er/Si structures with relaxed heterolayers

Semiconductors (Woodbury, N.Y.), 2010-11, Vol.44 (11), p.1480

2010

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Electroluminescence and photoconductivity of GeSi heterostructures with self-assembled islands in the wavelength range 1.3–1.55 μm

Physica. E, Low-dimensional systems & nanostructures, 2009-05, Vol.41 (6), p.935-938

2009

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Kinetics of terahertz photoconductivity in p-Ge under impurity breakdown conditions

Semiconductors (Woodbury, N.Y.), 2010-11, Vol.44 (11), p.1476-1479

2010

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Specific features of the mechanisms of excitation of erbium photoluminescence in epitaxial Si:Er/Si structures

Semiconductors (Woodbury, N.Y.), 2010-11, Vol.44 (11), p.1472-1475

2010

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Photoconductivity of InAs/GaAs structures with InAs nanoclusters in the near-infrared region

Semiconductors (Woodbury, N.Y.), 2010-11, Vol.44 (11), p.1464-1466

2010

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Photoluminescence excitation spectroscopy of erbium in epitaxially grown Si:Er structures

Optical materials, 2005-02, Vol.27 (5), p.890-893

2005

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Photoluminescence of SiGe/Si(001) self-assembled islands grown on strained Si/sub 1-x/Ge/sub x/ layer

IEEE International Conference on Group IV Photonics, 2005. 2nd, 2005, p.63-64

2005

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Features of spectral properties of Sm3+ complexes with dithia- and diselenophosphinate ligands

UPCONVERSION LUMINESCENCE OF [Er.sup.3+] IONS FROM BARIUM TITANATE XEROGEL POWDER AND TARGET FABRICATED BY EXPLOSIVE COMPACTION METHOD

Strain-driven alloying: effect on sizes, shape and photoluminescence of GeSi/Si(001) self-assembled islands

On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates

Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates

Excitation spectra of photoluminescence and its kinetics in structures with self-assembled Ge:Si nanoislands

Effect of surface Si-Si dimers on photoluminescence of silicon nanocrystals in the silicon dioxide matrix

Time-resolved photoluminescence from self-assembled Ge(Si) islands in multilayer SiGe/Si and SiGe/SOI structures

Luminescent properties of MBE-grown Si:Er/SOI structures

Determination of the excitation cross section of photoluminescence from an Er ion in the case of homogeneous and inhomogeneous optical excitation

Guiding effect of quantum wells in semiconductor lasers

Terahertz-range spontaneous emission under the optical excitation of donors in uniaxially stressed bulk silicon and SiGe/Si heterostructures

Mechanism of the subband excitation of photoluminescence from erbium ions in silicon under high-intensity optical pumping

Band-to-band and direct optical excitation of Er in silicon: Comparison of kinetics, temperature dependence of erbium PL

Photoluminescence line width of self-assembled Ge(Si) islands arranged between strained Si layers

Growth and photoluminescence of self-assembled islands obtained during the deposition of Ge on a strained SiGe layer

Effect of irradiation on the luminescence properties of low-dimensional SiGe/Si(001) heterostructures

Effect of growth temperature on photoluminescence of Ge(Si) self-assembled islands embedded in a tensile-strained Si layer

Special features of the excitation spectra and kinetics of photoluminescence of the [Si.sub.1 - x][Ge.sub.x]:Er/Si structures with relaxed heterolayers

Electroluminescence and photoconductivity of GeSi heterostructures with self-assembled islands in the wavelength range 1.3–1.55 μm

Kinetics of terahertz photoconductivity in p-Ge under impurity breakdown conditions

Specific features of the mechanisms of excitation of erbium photoluminescence in epitaxial Si:Er/Si structures

Photoconductivity of InAs/GaAs structures with InAs nanoclusters in the near-infrared region

Photoluminescence excitation spectroscopy of erbium in epitaxially grown Si:Er structures

Photoluminescence of SiGe/Si(001) self-assembled islands grown on strained Si/sub 1-x/Ge/sub x/ layer

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