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Erbium upconversion luminescence from sol-gel derived multilayer porous inorganic perovskite film

Journal of advanced dielectrics, 2022-04, Vol.12 (2)

2022

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Formation and Optical Properties of Locally Strained Ge Microstructures Embedded into Cavities

Semiconductors (Woodbury, N.Y.), 2021-06, Vol.55 (6), p.531-536

2021

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Influence of the Growth Conditions and Doping Level on the Luminescence Kinetics of Ge:Sb Layers Grown on Silicon

Semiconductors (Woodbury, N.Y.), 2020-07, Vol.54 (7), p.811-816

2020

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Kinetics of the Luminescence Response of Self-Assembled Ge(Si) Nanoislands Embedded in Two-Dimensional Photonic Crystals

Semiconductors (Woodbury, N.Y.), 2020-10, Vol.54 (10), p.1352-1359

2020

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Enhancement of the Luminescence Signal from Self-Assembled Ge(Si) Nanoislands due to Interaction with the Modes of Two-Dimensional Photonic Crystals

Semiconductors (Woodbury, N.Y.), 2020-08, Vol.54 (8), p.975-981

2020

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Ordered Arrays of Ge(Si) Quantum Dots Incorporated into Two-Dimensional Photonic Crystals

Semiconductors (Woodbury, N.Y.), 2019-10, Vol.53 (10), p.1329-1333

2019

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Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers

Semiconductors (Woodbury, N.Y.), 2019-10, Vol.53 (10), p.1357-1362

2019

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Formation and Properties of Locally Tensile Strained Ge Microstructures for Silicon Photonics

Semiconductors (Woodbury, N.Y.), 2018-11, Vol.52 (11), p.1442-1447

2018

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Si and Ge nanocrystals in resonator multilayer structures

Physica status solidi. A, Applications and materials science, 2016-11, Vol.213 (11), p.2867-2872

2016

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Exciton self-trapped on Si-Si dimers on the surface of silicon nanocrystal: Experimental evidence

Physica Status Solidi. B: Basic Solid State Physics, 2016-11, Vol.253 (11), p.2150-2153

2016

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Analysis of the optical gain due to free-to-bound electronic transitions in indium-rich InGaN layers

Journal of applied physics, 2023-12, Vol.134 (21)

2023

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Light-emitting diodes with Ge(Si) nanoislands embedded in photonic crystals

Nanotechnology, 2024-04, Vol.35 (16), p.165203

2024

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Enhancing the photoluminescence response of thick Ge-on-Si layers using photonic crystals

Journal of physics. D, Applied physics, 2022-02, Vol.55 (7), p.75107

2022

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Size-dependent luminescence kinetics of rare-earth Er3+ ions in Y2O3 nanospheres

Journal of applied physics, 2019-03, Vol.125 (12)

2019

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Mid-infrared two photon absorption sensitivity of commercial detectors

Applied physics letters, 2017-10, Vol.111 (17)

2017

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Light emission from Ge(Si)/SOI self-assembled nanoislands embedded in photonic crystal slabs of various periods with and without cavities

Semiconductor science and technology, 2019-02, Vol.34 (2), p.24003

2019

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Effect of antimony doping on the energy of optical transitions in n-Ge layers grown on Si (001) and Ge (001) substrates

Journal of applied physics, 2020-04, Vol.127 (16)

2020

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Towards the indium nitride laser: obtaining infrared stimulated emission from planar monocrystalline InN structures

Scientific reports, 2018-06, Vol.8 (1), p.9454-8, Article 9454

2018

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Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate

Applied physics letters, 2016-08, Vol.109 (6)

2016

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Synthesis, structure, and luminescence properties of sodium and ytterbium complexes with 2-(benzothiazol-2-yl)selenophenolate ligands

Russian chemical bulletin, 2022-02, Vol.71 (2), p.298-305

2022

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Band-to-band and direct optical excitation of Er in silicon: Comparison of kinetics, temperature dependence of erbium PL

Physica. B, Condensed matter, 2009-12, Vol.404 (23-24), p.4601-4603

2009

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Radiative Properties of Up-Conversion Coatings Formed on the Basis of Erbium-Doped Barium Titanate Xerogels

Semiconductors (Woodbury, N.Y.), 2021-09, Vol.55 (9), p.735-740

2021

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Upconversion Luminescence of Er3+ Ions from Barium Titanate Xerogel Powder and Target Fabricated by Explosive Compaction Method

Journal of applied spectroscopy, 2022-05, Vol.89 (2), p.238-243

2022

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Silicon and germanium nanostructures formed by spark discharge plasma

Journal of physics. Conference series, 2019-06, Vol.1238 (1), p.12052

2019

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Comparative Analysis of the Luminescence of Ge:Sb Layers Grown on Ge(001) and Si(001) Substrates

Semiconductors (Woodbury, N.Y.), 2019-10, Vol.53 (10), p.1318-1323

2019

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Erbium upconversion luminescence from sol-gel derived multilayer porous inorganic perovskite film

Formation and Optical Properties of Locally Strained Ge Microstructures Embedded into Cavities

Influence of the Growth Conditions and Doping Level on the Luminescence Kinetics of Ge:Sb Layers Grown on Silicon

Kinetics of the Luminescence Response of Self-Assembled Ge(Si) Nanoislands Embedded in Two-Dimensional Photonic Crystals

Enhancement of the Luminescence Signal from Self-Assembled Ge(Si) Nanoislands due to Interaction with the Modes of Two-Dimensional Photonic Crystals

Ordered Arrays of Ge(Si) Quantum Dots Incorporated into Two-Dimensional Photonic Crystals

Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers

Formation and Properties of Locally Tensile Strained Ge Microstructures for Silicon Photonics

Si and Ge nanocrystals in resonator multilayer structures

Exciton self-trapped on Si-Si dimers on the surface of silicon nanocrystal: Experimental evidence

Analysis of the optical gain due to free-to-bound electronic transitions in indium-rich InGaN layers

Light-emitting diodes with Ge(Si) nanoislands embedded in photonic crystals

Enhancing the photoluminescence response of thick Ge-on-Si layers using photonic crystals

Size-dependent luminescence kinetics of rare-earth Er3+ ions in Y2O3 nanospheres

Mid-infrared two photon absorption sensitivity of commercial detectors

Light emission from Ge(Si)/SOI self-assembled nanoislands embedded in photonic crystal slabs of various periods with and without cavities

Effect of antimony doping on the energy of optical transitions in n-Ge layers grown on Si (001) and Ge (001) substrates

Towards the indium nitride laser: obtaining infrared stimulated emission from planar monocrystalline InN structures

Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate

Synthesis, structure, and luminescence properties of sodium and ytterbium complexes with 2-(benzothiazol-2-yl)selenophenolate ligands

Band-to-band and direct optical excitation of Er in silicon: Comparison of kinetics, temperature dependence of erbium PL

Radiative Properties of Up-Conversion Coatings Formed on the Basis of Erbium-Doped Barium Titanate Xerogels

Upconversion Luminescence of Er3+ Ions from Barium Titanate Xerogel Powder and Target Fabricated by Explosive Compaction Method

Silicon and germanium nanostructures formed by spark discharge plasma

Comparative Analysis of the Luminescence of Ge:Sb Layers Grown on Ge(001) and Si(001) Substrates

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