UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 52

Sortiert nach

Three-Dimensional nand Flash Architecture Design Based on Single-Crystalline STacked ARray

IEEE transactions on electron devices, 2012-01, Vol.59 (1), p.35-45

2012

Volltextzugriff (PDF)

Independent Double-Gate Fin SONOS Flash Memory Fabricated With Sidewall Spacer Patterning

IEEE transactions on electron devices, 2009-08, Vol.56 (8), p.1721-1728

2009

Volltextzugriff (PDF)

Single-Crystalline Si STacked ARray (STAR) NAND Flash Memory

IEEE transactions on electron devices, 2011-04, Vol.58 (4), p.1006-1014

2011

Volltextzugriff (PDF)

LAyer Selection by ERase (LASER) With an Etch-Through-Spacer Technique in a Bit-Line Stacked 3-D nand Flash Memory Array

IEEE transactions on electron devices, 2011-07, Vol.58 (7), p.1892-1897

2011

Volltextzugriff (PDF)

A Charge Trap Folded nand Flash Memory Device With Band-Gap-Engineered Storage Node

IEEE transactions on electron devices, 2011-02, Vol.58 (2), p.288-295

2011

Volltextzugriff (PDF)

Arch NAND Flash Memory Array With Improved Virtual Source/Drain Performance

IEEE electron device letters, 2010-12, Vol.31 (12), p.1374-1376

2010

Volltextzugriff (PDF)

Investigation of Field Concentration Effects in Arch Gate Silicon-Oxide-Nitride-Oxide-Silicon Flash Memory

Japanese Journal of Applied Physics, 2010-11, Vol.49 (11), p.114202-114202-6, Article 114202

2010

Volltextzugriff (PDF)

Extended Word-Line NAND Flash Memory

Japanese Journal of Applied Physics, 2009-08, Vol.48 (8), p.81203

2009

Volltextzugriff (PDF)

Cone-Type SONOS Flash Memory

IEEE electron device letters, 2009-12, Vol.30 (12), p.1332-1334

2009

Volltextzugriff (PDF)

A Vertical 4-Bit SONOS Flash Memory and a Unique 3-D Vertical nor Array Structure

IEEE transactions on nanotechnology, 2010-01, Vol.9 (1), p.70-77

2010

Volltextzugriff (PDF)

Fabrication of Highly Scaled Silicon Nanowire Gate-All-Around Metal--Oxide--Semiconductor Field Effect Transistors by Using Self-Aligned Local-Channel V-gate by Optical Lithography Process

Japanese Journal of Applied Physics, 2010-08, Vol.49 (8), p.084203-084203-5

2010

Volltextzugriff (PDF)

A Subthreshold Slope and Low-frequency Noise Characteristics in Charge Trap Flash Memories with Gate-All-Around and Planar Structure

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2012, 12(3), 47, pp.360-369

2012

Volltextzugriff (PDF)

Dual Gate Single-Electron Transistors with a Recessed Channel and Underlapped Source/Drain Structure

Japanese Journal of Applied Physics, 2010-11, Vol.49 (11), p.115201-115201-5

2010

Volltextzugriff (PDF)

Stacked-nanowire device with virtual source/drain (SD-VSD) for 3D NAND flash memory application

Solid-state electronics, 2011-10, Vol.64 (1), p.42-46

2011

Volltextzugriff (PDF)

A 2-Bit Recessed Channel Nonvolatile Memory Device With a Lifted Charge-Trapping Node

IEEE transactions on nanotechnology, 2009-01, Vol.8 (1), p.111-115

2009

Volltextzugriff (PDF)

3D NAND flash memory with laterally-recessed channel (LRC) and connection gate architecture

Solid-state electronics, 2011, Vol.55 (1), p.37-43

2011

Volltextzugriff (PDF)

Scaling behaviors of silicon-nitride layer for charge-trapping memory

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2010-07, Vol.28 (4), p.675-678

2010

Volltextzugriff (PDF)

Effects of tunnel oxide process on SONOS flash memory characteristics

Thin solid films, 2010-02, Vol.518 (9), p.2509-2512

2010

Volltextzugriff (PDF)

Co-Induced Low-Temperature Silicidation of Ni Germanosilicide Using NiPt Alloy and the Effect of Ge Ratio on Thermal Stability

IEEE transactions on nanotechnology, 2007-09, Vol.6 (5), p.485-491

2007

Volltextzugriff (PDF)

Highly thermal robust NiSi for nanoscale MOSFETs utilizing a novel hydrogen plasma immersion ion implantation and Ni-Co-TiN tri-layer

IEEE electron device letters, 2005-02, Vol.26 (2), p.90-92

2005

Volltextzugriff (PDF)

Novel Nitrogen Doped Ni Self-Alingned Silicide Process for Nanoscale Complementary Metal Oxide Semiconductor Technology

Japanese Journal of Applied Physics, 2005-04, Vol.44 (4S), p.2142

2005

Volltextzugriff (PDF)

Thermal Stability Improvement of Ni-Germano silicide Utilizing Ni-Pd Alloy for Nanoscale CMOS Technology

IEEE transactions on nanotechnology, 2007-07, Vol.6 (4), p.431-437

2007

Volltextzugriff (PDF)

Program/Erase Model of Nitride-Based NAND-Type Charge Trap Flash Memories

Japanese Journal of Applied Physics, 2010-08, Vol.49 (8), p.084301-084301-4

2010

Volltextzugriff (PDF)

Fabrication and characterization of fin SONOS flash memory with separated double-gate structure

Solid-state electronics, 2008-10, Vol.52 (10), p.1498-1504

2008

Volltextzugriff (PDF)

Abnormal Oxidation of Nickel Silicide on N-Type Substrate and Effect of Preamorphization Implantation

Japanese Journal of Applied Physics, 2004-10, Vol.43 (10), p.6998-6999

2004

Volltextzugriff (PDF)

1 – 25 von 52

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(34)
Mit Volltextzugriff
(52)

Publikationsform

Artikel
(36)
Tagungsberichte
(16)

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(36)
Physical Sciences
(27)
Physics
(27)
Physics, Applied
(26)
Technology
(25)
Engineering
(22)
Engineering, Electrical & Electronic
(22)
Flash Memory
(20)
Applied Sciences
(19)
Electronics
(19)
Exact Sciences And Technology
(19)
Semiconductor Electronics. Microelectronics. Optoelectronics. Solid State Devices
(17)
Design. Technologies. Operation Analysis. Testing
(15)
Integrated Circuits
(15)
Integrated Circuits By Function
(12)
Thermal Stability
(12)
Sonos Devices
(11)
Silicon
(10)
Gas Insulated Transmission Lines
(9)
Circuit Properties
(8)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 7 Tagen
(1)

Menü

Weitere Dienste

Einstellungen

Three-Dimensional nand Flash Architecture Design Based on Single-Crystalline STacked ARray

Independent Double-Gate Fin SONOS Flash Memory Fabricated With Sidewall Spacer Patterning

Single-Crystalline Si STacked ARray (STAR) NAND Flash Memory

LAyer Selection by ERase (LASER) With an Etch-Through-Spacer Technique in a Bit-Line Stacked 3-D nand Flash Memory Array

A Charge Trap Folded nand Flash Memory Device With Band-Gap-Engineered Storage Node

Arch NAND Flash Memory Array With Improved Virtual Source/Drain Performance

Investigation of Field Concentration Effects in Arch Gate Silicon-Oxide-Nitride-Oxide-Silicon Flash Memory

Extended Word-Line NAND Flash Memory

Cone-Type SONOS Flash Memory

A Vertical 4-Bit SONOS Flash Memory and a Unique 3-D Vertical nor Array Structure

Fabrication of Highly Scaled Silicon Nanowire Gate-All-Around Metal--Oxide--Semiconductor Field Effect Transistors by Using Self-Aligned Local-Channel V-gate by Optical Lithography Process

A Subthreshold Slope and Low-frequency Noise Characteristics in Charge Trap Flash Memories with Gate-All-Around and Planar Structure

Dual Gate Single-Electron Transistors with a Recessed Channel and Underlapped Source/Drain Structure

Stacked-nanowire device with virtual source/drain (SD-VSD) for 3D NAND flash memory application

A 2-Bit Recessed Channel Nonvolatile Memory Device With a Lifted Charge-Trapping Node

3D NAND flash memory with laterally-recessed channel (LRC) and connection gate architecture

Scaling behaviors of silicon-nitride layer for charge-trapping memory

Effects of tunnel oxide process on SONOS flash memory characteristics

Co-Induced Low-Temperature Silicidation of Ni Germanosilicide Using NiPt Alloy and the Effect of Ge Ratio on Thermal Stability

Highly thermal robust NiSi for nanoscale MOSFETs utilizing a novel hydrogen plasma immersion ion implantation and Ni-Co-TiN tri-layer

Novel Nitrogen Doped Ni Self-Alingned Silicide Process for Nanoscale Complementary Metal Oxide Semiconductor Technology

Thermal Stability Improvement of Ni-Germano silicide Utilizing Ni-Pd Alloy for Nanoscale CMOS Technology

Program/Erase Model of Nitride-Based NAND-Type Charge Trap Flash Memories

Fabrication and characterization of fin SONOS flash memory with separated double-gate structure

Abnormal Oxidation of Nickel Silicide on N-Type Substrate and Effect of Preamorphization Implantation

Suchergebnisse filtern