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Ultra-high-quality two-dimensional electron systems

Nature materials, 2021-05, Vol.20 (5), p.632-637

2021

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The charge trapping characteristics of Si3N4 and Al2O3 layers on amorphous-indium-gallium-zinc oxide thin films for memory application

Applied physics letters, 2012-04, Vol.100 (18)

2012

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A Mediator‐Free Multi‐Ply Biofuel Cell Using an Interfacial Assembly between Hydrophilic Enzymes and Hydrophobic Conductive Oxide Nanoparticles with Pointed Apexes

Advanced materials (Weinheim), 2023-12, Vol.35 (51), p.e2304986-n/a

2023

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Growth of p‑Type Tin(II) Monoxide Thin Films by Atomic Layer Deposition from Bis(1-dimethylamino-2-methyl-2propoxy)tin and H2O

Chemistry of materials, 2014-11, Vol.26 (21), p.6088-6091

2014

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A Hybrid Biofuel Cell with High Power and Operational Stability Using Electron Transfer‐Intensified Mediators and Multi‐Interaction Assembly

Advanced energy materials, 2024-08, Vol.14 (32), p.n/a

2024

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Kinetically controlled metal-elastomer nanophases for environmentally resilient stretchable electronics

Nature communications, 2024-04, Vol.15 (1), p.3071-3071, Article 3071

2024

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Heterostructure design to achieve high quality, high density GaAs 2D electron system with g-factor tending to zero

Applied physics letters, 2020-07, Vol.117 (2)

2020

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Emerging Challenges in Textile Energy Electrodes: Interfacial Engineering for High‐Performance Next‐Generation Flexible Energy Storage Devices

Small structures, 2024-02, Vol.5 (2), p.n/a

2024

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Indium tin oxide/InGaZnO bilayer stacks for enhanced mobility and optical stability in amorphous oxide thin film transistors

Applied physics letters, 2014-07, Vol.105 (1)

2014

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Effects of substrate conductivity on cell morphogenesis and proliferation using tailored, atomic layer deposition-grown ZnO thin films

Scientific reports, 2015-04, Vol.5 (1), p.9974-9974, Article 9974

2015

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Vertically integrated submicron amorphous-In2Ga2ZnO7 thin film transistor using a low temperature process

Applied physics letters, 2012-05, Vol.100 (20)

2012

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Performance Variation According to Device Structure and the Source/Drain Metal Electrode of a-IGZO TFTs

IEEE transactions on electron devices, 2012-12, Vol.59 (12), p.3357-3363

2012

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The Electrical Properties of Asymmetric Schottky Contact Thin-Film Transistors with Amorphous-In2Ga2ZnO7

IEEE transactions on electron devices, 2013-03, Vol.60 (3), p.1128-1135

2013

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Trimethylsilylcyclopentadienyl tris(dimethylamino)zirconium as a single-source metal precursor for the atomic layer deposition of ZrxSi1-xO4

Thin solid films, 2014-08, Vol.564, p.140-145

2014

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Reduction of Charge Trapping in HfO2 Film on Ge Substrates by Atomic Layer Deposition of Various Passivating Interfacial Layers

IEEE transactions on electron devices, 2012-09, Vol.59 (9), p.2350-2356

2012

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Dry carbothermal reaction-enabled ultra-dense nanoparticle coatings for high-performance Li-S batteries

Chemical engineering journal (Lausanne, Switzerland : 1996), 2024-11, Vol.499, p.156229, Article 156229

2024

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The effects of device geometry on the negative bias temperature instability of Hf-In-Zn-O thin film transistors under light illumination

Applied physics letters, 2011-01, Vol.98 (2), p.023507-023507-3

2011

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Resistive Switching in TiO2 Thin Films Using the Semiconducting In-Ga-Zn-O Electrode

IEEE electron device letters, 2012-04, Vol.33 (4), p.582-584

2012

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The Electrical Properties of Asymmetric Schottky Contact Thin-Film Transistors with Amorphous- \hbox\hbox\hbox

IEEE transactions on electron devices, 2013-03, Vol.60 (3), p.1128-1135

2013

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Improvement in the negative bias illumination temperature stress instability of In-Ga-Zn-O thin film transistors using an Al2O3 buffer layer

Physica status solidi. PSS-RRL. Rapid research letters, 2011-06, Vol.5 (5-6), p.178-180

2011

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Resistive Switching in \hbox Thin Films Using the Semiconducting In-Ga-Zn-O Electrode

IEEE electron device letters, 2012-04, Vol.33 (4), p.582-584

2012

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Atomic Layer Growth of Rutile TiO2 Films with Ultrahigh Dielectric Constants via Crystal Orientation Engineering

ACS applied materials & interfaces, 2024-07, Vol.16 (26), p.33877-33884

2024

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Atomic Layer Growth of Rutile TiO 2 Films with Ultrahigh Dielectric Constants via Crystal Orientation Engineering

ACS applied materials & interfaces, 2024-07, Vol.16 (26), p.33877-33884

2024

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High-Temperature Atomic Layer Deposition of Rutile TiO 2 Films on RuO 2 Substrates: Interfacial Reactions and Dielectric Performance

Chemistry of materials, 2024-04, Vol.36 (7), p.3326-3333

2024

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A Mediator‐Free Multi‐Ply Biofuel Cell Using an Interfacial Assembly between Hydrophilic Enzymes and Hydrophobic Conductive Oxide Nanoparticles with Pointed Apexes (Adv. Mater. 51/2023)

Advanced materials (Weinheim), 2023-12, Vol.35 (51), p.n/a

2023

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Ultra-high-quality two-dimensional electron systems

The charge trapping characteristics of Si3N4 and Al2O3 layers on amorphous-indium-gallium-zinc oxide thin films for memory application

A Mediator‐Free Multi‐Ply Biofuel Cell Using an Interfacial Assembly between Hydrophilic Enzymes and Hydrophobic Conductive Oxide Nanoparticles with Pointed Apexes

Growth of p‑Type Tin(II) Monoxide Thin Films by Atomic Layer Deposition from Bis(1-dimethylamino-2-methyl-2propoxy)tin and H2O

A Hybrid Biofuel Cell with High Power and Operational Stability Using Electron Transfer‐Intensified Mediators and Multi‐Interaction Assembly

Kinetically controlled metal-elastomer nanophases for environmentally resilient stretchable electronics

Heterostructure design to achieve high quality, high density GaAs 2D electron system with g-factor tending to zero

Emerging Challenges in Textile Energy Electrodes: Interfacial Engineering for High‐Performance Next‐Generation Flexible Energy Storage Devices

Indium tin oxide/InGaZnO bilayer stacks for enhanced mobility and optical stability in amorphous oxide thin film transistors

Effects of substrate conductivity on cell morphogenesis and proliferation using tailored, atomic layer deposition-grown ZnO thin films

Vertically integrated submicron amorphous-In2Ga2ZnO7 thin film transistor using a low temperature process

Performance Variation According to Device Structure and the Source/Drain Metal Electrode of a-IGZO TFTs

The Electrical Properties of Asymmetric Schottky Contact Thin-Film Transistors with Amorphous-In2Ga2ZnO7

Trimethylsilylcyclopentadienyl tris(dimethylamino)zirconium as a single-source metal precursor for the atomic layer deposition of ZrxSi1-xO4

Reduction of Charge Trapping in HfO2 Film on Ge Substrates by Atomic Layer Deposition of Various Passivating Interfacial Layers

Dry carbothermal reaction-enabled ultra-dense nanoparticle coatings for high-performance Li-S batteries

The effects of device geometry on the negative bias temperature instability of Hf-In-Zn-O thin film transistors under light illumination

Resistive Switching in TiO2 Thin Films Using the Semiconducting In-Ga-Zn-O Electrode

The Electrical Properties of Asymmetric Schottky Contact Thin-Film Transistors with Amorphous- \hbox\hbox\hbox

Improvement in the negative bias illumination temperature stress instability of In-Ga-Zn-O thin film transistors using an Al2O3 buffer layer

Resistive Switching in \hbox Thin Films Using the Semiconducting In-Ga-Zn-O Electrode

Atomic Layer Growth of Rutile TiO2 Films with Ultrahigh Dielectric Constants via Crystal Orientation Engineering

Atomic Layer Growth of Rutile TiO 2 Films with Ultrahigh Dielectric Constants via Crystal Orientation Engineering

High-Temperature Atomic Layer Deposition of Rutile TiO 2 Films on RuO 2 Substrates: Interfacial Reactions and Dielectric Performance

A Mediator‐Free Multi‐Ply Biofuel Cell Using an Interfacial Assembly between Hydrophilic Enzymes and Hydrophobic Conductive Oxide Nanoparticles with Pointed Apexes (Adv. Mater. 51/2023)

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