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Negative differential resistance of pseudomorphic InGaAs quantum-wire FETs

Journal of crystal growth, 2005-05, Vol.278 (1), p.94-97

2005

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Negative differential resistance of InGaAs dual channel transistors

Journal of physics. Conference series, 2006-05, Vol.38 (1), p.108-111

2006

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Electron–phonon scattering in an etched InGaAs quantum wire

Physica. B, Condensed matter, 2002-03, Vol.314 (1), p.99-103

2002

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Enhanced peak-to-valley current ratio in InGaAs∕InAlAs trench-type quantum-wire negative differential resistance field-effect transistors

Journal of applied physics, 2005-02, Vol.97 (3)

2005

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InGaAs dual channel transistors with negative differential resistance

Applied physics letters, 2006-04, Vol.88 (14), p.142107-142107-3

2006

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Negative differential resistance effects of trench-type InGaAs quantum-wire field-effect transistors with 50-nm gate-length

Applied physics letters, 2003-07, Vol.83 (4), p.701-703

2003

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Trench-type narrow InGaAs quantum wires fabricated on a (311)A InP substrate

Applied physics letters, 2001-01, Vol.78 (1), p.76-78

2001

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InGaAs/AlGaAs Quantum Wire DFB Buried HeteroStructure Laser Diode by One-Time Selective MOCVD on Ridge Substrate

Japanese Journal of Applied Physics, 2005-04, Vol.44 (4S), p.2546

2005

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Mapping Contact Potential Differences with Noncontact Atomic Force Microscope Using Resonance Frequency Shift versus Sample Bias Voltage Curves

Japanese Journal of Applied Physics, 2005-11, Vol.44 (11R), p.8113

2005

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Use of the coherent states in evaluating the canonical density matrix for a harmonic oscillator

Journal of physics. A, Mathematical and general, 1990-05, Vol.23 (10), p.1705-1715

Yonei, K

1990

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Nanometer-Scale Surface Modification Using Scanning Tunneling Microscope (STM)-Based Lithography with Conductive Layer on Resist

Japanese Journal of Applied Physics, 2002-06, Vol.41 (Part 2, No. 6B), p.L667-L668

2002

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Observation of negative differential resistance of a trench-type narrow InGaAs quantum-wire field-effect transistor on a (311)A InP substrate

Applied physics letters, 2001-04, Vol.78 (16), p.2369-2371

2001

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Quasi-one-dimensional transport characteristics of ridge-type InGaAs quantum-wire field-effect transistors

Applied physics letters, 2001-07, Vol.79 (3), p.371-373

2001

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AlGaAs/InGaAs DFB Laser by One-Time Selective MOCVD Growth on a Grating Substrate

Japanese Journal of Applied Physics, 2004-04, Vol.43 (4S), p.2019

2004

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An operator method of evaluating the Bloch density matrix for an oscillator in a constant magnetic field

Journal of physics. A, Mathematical and general, 1989-07, Vol.22 (13), p.2415-2426

Yonei, K

1989

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Spin rearrangement of many-electron atoms in magnetic fields of arbitrary strength

Journal of physics. B, Atomic and molecular physics, 1982-09, Vol.15 (17), p.2837-2849

1982

Volltextzugriff (PDF)

Pseudomorphic InGaAs quantum-wire FETs with negative differential resistance

Superlattices and microstructures, 2003-09, Vol.34 (3), p.479-484

2003

Volltextzugriff (PDF)

A relativistic Thomas-Fermi model of compressed atoms

Physics letters. A, 1989-06, Vol.138 (4), p.193-196

Yonei, Katsumi

1989

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Thomas–Fermi–Dirac interaction potentials for rare gas systems

The Journal of chemical physics, 1977-01, Vol.66 (10), p.4551-4556

1977

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Effects of As 2 flux for fabrication of GaAs/AlGaAs quantum wires on V-grooved substrates in molecular beam epitaxy

Journal of crystal growth, 1998-03, Vol.186 (1), p.27-32

1998

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Local tunneling barrier height imaging on Si(111) surface

Japanese Journal of Applied Physics, 1997-06, Vol.36 (6B), p.3864-3867

1997

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Effects of As2 flux for fabrication of GaAs/AlGaAs quantum wires on V-grooved substrates in molecular beam epitaxy

Journal of crystal growth, 1998-03, Vol.186 (1-2), p.27-32

1998

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Thomas-Fermi Theory for Atoms in a Strong Magnetic Field

Progress of theoretical physics, 1978-03, Vol.59 (3), p.683-696

1978

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Minimum principles for the thomas-fermi-dirac density

International journal of quantum chemistry, 1975-01, Vol.9 (S9), p.59-66

1975

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Effects of As 2 Flux and Atomic Hydrogen Irradiation for Growth of InGaAs Quantum Wires by Molecular Beam Epitaxy

Japanese Journal of Applied Physics, 1998-03, Vol.37 (3S), p.1497

1998

Volltextzugriff (PDF)

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Negative differential resistance of pseudomorphic InGaAs quantum-wire FETs

Negative differential resistance of InGaAs dual channel transistors

Electron–phonon scattering in an etched InGaAs quantum wire

Enhanced peak-to-valley current ratio in InGaAs∕InAlAs trench-type quantum-wire negative differential resistance field-effect transistors

InGaAs dual channel transistors with negative differential resistance

Negative differential resistance effects of trench-type InGaAs quantum-wire field-effect transistors with 50-nm gate-length

Trench-type narrow InGaAs quantum wires fabricated on a (311)A InP substrate

InGaAs/AlGaAs Quantum Wire DFB Buried HeteroStructure Laser Diode by One-Time Selective MOCVD on Ridge Substrate

Mapping Contact Potential Differences with Noncontact Atomic Force Microscope Using Resonance Frequency Shift versus Sample Bias Voltage Curves

Use of the coherent states in evaluating the canonical density matrix for a harmonic oscillator

Nanometer-Scale Surface Modification Using Scanning Tunneling Microscope (STM)-Based Lithography with Conductive Layer on Resist

Observation of negative differential resistance of a trench-type narrow InGaAs quantum-wire field-effect transistor on a (311)A InP substrate

Quasi-one-dimensional transport characteristics of ridge-type InGaAs quantum-wire field-effect transistors

AlGaAs/InGaAs DFB Laser by One-Time Selective MOCVD Growth on a Grating Substrate

An operator method of evaluating the Bloch density matrix for an oscillator in a constant magnetic field

Spin rearrangement of many-electron atoms in magnetic fields of arbitrary strength

Pseudomorphic InGaAs quantum-wire FETs with negative differential resistance

A relativistic Thomas-Fermi model of compressed atoms

Thomas–Fermi–Dirac interaction potentials for rare gas systems

Effects of As 2 flux for fabrication of GaAs/AlGaAs quantum wires on V-grooved substrates in molecular beam epitaxy

Local tunneling barrier height imaging on Si(111) surface

Effects of As2 flux for fabrication of GaAs/AlGaAs quantum wires on V-grooved substrates in molecular beam epitaxy

Thomas-Fermi Theory for Atoms in a Strong Magnetic Field

Minimum principles for the thomas-fermi-dirac density

Effects of As 2 Flux and Atomic Hydrogen Irradiation for Growth of InGaAs Quantum Wires by Molecular Beam Epitaxy

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