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Hybrid simulation method of quantum characteristics for advanced Si MOSFETs under extreme conditions by incorporating simplified master equation with TCAD

Results in physics, 2024-08, Vol.63, p.107856, Article 107856

2024

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Transfer Learning for Improving Seismic Building Damage Assessment

Remote sensing (Basel, Switzerland), 2022-01, Vol.14 (1), p.201

2022

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High-performance multilayer WSe2 p-type field effect transistors with Pd contacts for circuit applications

Journal of materials science. Materials in electronics, 2021-07, Vol.32 (13), p.17427-17435

2021

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Can Employees Exercise Control Over Managers? The Role of the Employees' Knowledge of Manager Behavior and Manager Discretion

The Accounting review, 2021-09, Vol.96 (5), p.365-388

Yin, Huaxiang

2021

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Low Temperature (Down to 6 K) and Quantum Transport Characteristics of Stacked Nanosheet Transistors with a High-K/Metal Gate-Last Process

Nanomaterials (Basel, Switzerland), 2024-05, Vol.14 (11), p.916

2024

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Improved Subthreshold Characteristics of Epi-Silicon FinFET via Fin Surface Passivation Technologies

ECS journal of solid state science and technology, 2024-10, Vol.13 (10), p.105001

2024

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Large memory window with low operating voltages using Hf1.5Gd2O6 charge trapping layer and thin MoS2 channel

Electronics letters, 2021-12, Vol.57 (25), p.992-994

2021

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Simulation of silicon quantum dots with diamond-channel by simplified ME model

Results in physics, 2022-07, Vol.38, p.105575, Article 105575

2022

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Discussion of “From experiment to the field: The case of a price formation model based on laboratory findings”

Journal of economic dynamics & control, 2022-08, Vol.141, p.104390, Article 104390

Yin, Huaxiang

2022

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The Impact of Ambient Temperature on Electrothermal Characteristics in Stacked Nanosheet Transistors with Multiple Lateral Stacks

Nanomaterials (Basel, Switzerland), 2023-11, Vol.13 (22), p.2971

2023

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Scalable 3-D Fin-Like Poly-Si TFT and Its Nonvolatile Memory Application

IEEE transactions on electron devices, 2008-02, Vol.55 (2), p.578-584

2008

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Program/Erase Characteristics of Amorphous Gallium Indium Zinc Oxide Nonvolatile Memory

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.2071-2077

2008

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Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory

Advanced functional materials, 2009-05, Vol.19 (10), p.1587-1593

2009

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Study of selective isotropic etching Si1−xGex in process of nanowire transistors

Journal of materials science. Materials in electronics, 2020, Vol.31 (1), p.134-143

2020

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Think Twice Before Going for Incentives: Social Norms and the Principal's Decision on Compensation Contracts

Journal of accounting research, 2015-12, Vol.53 (5), p.985-1015

2015

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Improved Subthreshold Characteristics by Back-Gate Coupling on Ferroelectric ETSOI FETs

Nanoscale research letters, 2022-12, Vol.17 (1), p.124-124, Article 124

2022

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Improved Short Channel Effect Control in Bulk FinFETs With Vertical Implantation to Form Self-Aligned Halo and Punch-Through Stop Pocket

IEEE electron device letters, 2015-07, Vol.36 (7), p.648-650

2015

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Improved performance of MoS2 FET by in situ NH3 doping in ALD Al2O3 dielectric

Chinese physics B, 2022-07, Vol.31 (7), p.634-638

2022

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Simulation of Total Ionizing Dose (TID) Effects Mitigation Technique for 22 nm Fully-Depleted Silicon-on-Insulator (FDSOI) Transistor

IEEE access, 2020, Vol.8, p.154898-154905

2020

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Enhancement of InSe Field-Effect-Transistor Performance against Degradation of InSe Film in Air Environment

Nanomaterials (Basel, Switzerland), 2021-12, Vol.11 (12), p.3311

2021

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The optimization of contact interface between metal/MoS2 FETs by oxygen plasma treatment

Journal of materials science. Materials in electronics, 2020-06, Vol.31 (12), p.9660-9665

2020

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Fabrication and Characterization of a Novel Si Line Tunneling TFET With High Drive Current

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.336-340

2020

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Correction: Hu et al. Ultrasensitive Silicon Nanowire Biosensor with Modulated Threshold Voltages and Ultra-Small Diameter for Early Kidney Failure Biomarker Cystatin C. Biosensors 2023, 13 , 645

Biosensors (Basel), 2024-09, Vol.14 (10), p.461

2024

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Growth of SiGe layers in source and drain regions for 10 nm node complementary metal-oxide semiconductor (CMOS)

Journal of materials science. Materials in electronics, 2020, Vol.31 (1), p.26-33

2020

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Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors

Applied physics letters, 2008-08, Vol.93 (5), p.053501-053501-3

2008

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Hybrid simulation method of quantum characteristics for advanced Si MOSFETs under extreme conditions by incorporating simplified master equation with TCAD

Transfer Learning for Improving Seismic Building Damage Assessment

High-performance multilayer WSe2 p-type field effect transistors with Pd contacts for circuit applications

Can Employees Exercise Control Over Managers? The Role of the Employees' Knowledge of Manager Behavior and Manager Discretion

Low Temperature (Down to 6 K) and Quantum Transport Characteristics of Stacked Nanosheet Transistors with a High-K/Metal Gate-Last Process

Improved Subthreshold Characteristics of Epi-Silicon FinFET via Fin Surface Passivation Technologies

Large memory window with low operating voltages using Hf1.5Gd2O6 charge trapping layer and thin MoS2 channel

Simulation of silicon quantum dots with diamond-channel by simplified ME model

Discussion of “From experiment to the field: The case of a price formation model based on laboratory findings”

The Impact of Ambient Temperature on Electrothermal Characteristics in Stacked Nanosheet Transistors with Multiple Lateral Stacks

Scalable 3-D Fin-Like Poly-Si TFT and Its Nonvolatile Memory Application

Program/Erase Characteristics of Amorphous Gallium Indium Zinc Oxide Nonvolatile Memory

Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory

Study of selective isotropic etching Si1−xGex in process of nanowire transistors

Think Twice Before Going for Incentives: Social Norms and the Principal's Decision on Compensation Contracts

Improved Subthreshold Characteristics by Back-Gate Coupling on Ferroelectric ETSOI FETs

Improved Short Channel Effect Control in Bulk FinFETs With Vertical Implantation to Form Self-Aligned Halo and Punch-Through Stop Pocket

Improved performance of MoS2 FET by in situ NH3 doping in ALD Al2O3 dielectric

Simulation of Total Ionizing Dose (TID) Effects Mitigation Technique for 22 nm Fully-Depleted Silicon-on-Insulator (FDSOI) Transistor

Enhancement of InSe Field-Effect-Transistor Performance against Degradation of InSe Film in Air Environment

The optimization of contact interface between metal/MoS2 FETs by oxygen plasma treatment

Fabrication and Characterization of a Novel Si Line Tunneling TFET With High Drive Current

Correction: Hu et al. Ultrasensitive Silicon Nanowire Biosensor with Modulated Threshold Voltages and Ultra-Small Diameter for Early Kidney Failure Biomarker Cystatin C. Biosensors 2023, 13 , 645

Growth of SiGe layers in source and drain regions for 10 nm node complementary metal-oxide semiconductor (CMOS)

Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors

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