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Segregation coefficients of impurities in selenium by zone refining

Journal of crystal growth, 1998-05, Vol.187 (3), p.569-572

1998

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Growth of HgZnTe by directional solidification in a magnetic field

Journal of crystal growth, 1997-03, Vol.173 (1), p.88-96

1997

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Relationship between GRHL2 gene and tumor of the digestive system: research progress

Di er jun yi da xue xue bao, 2015-11, Vol.36 (11), p.1233

2015

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Vapor growth and characterization of ZnSeTe solid solutions

Journal of crystal growth, 2000-06, Vol.216 (1-4), p.104-112

2000

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Growth by CVT and characterization of Hg1-xCdxTe epitaxial layers

Journal of electronic materials, 1992-06, Vol.21 (6), p.563-573

1992

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Growth of Hg1−xCdxTe epitaxial layers on (100) CdTe by chemical vapor transport under normal and reduced gravity conditions

Journal of crystal growth, 1995-01, Vol.146 (1-4), p.610-618

1995

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Mass flux of ZnSe by physical vapor transport

Journal of crystal growth, 1995-01, Vol.146 (1-4), p.42-48

1995

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Crystal growth of HgZnTe alloy by directional solidification in low gravity environment

Journal of crystal growth, 2002, Vol.234 (2), p.487-497

2002

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Selenium precipitation in ZnSe crystals grown by physical vapor transport

Journal of crystal growth, 1995-02, Vol.147 (3), p.292-296

1995

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Effects of growth conditions on the composition of CVT and PVT grown Hg1-x Cd x Te epitaxial layers

Journal of electronic materials, 1992-06, Vol.21 (6), p.613-617

1992

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Thermodynamic analysis and mass flux of the HgZnTe-HgI2 chemical vapor transport system

Journal of crystal growth, 1993-08, Vol.131 (3-4), p.574-588

1993

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Vapor-phase stoichiometry and heat treatment of CdTe starting material for physical vapor transport

Journal of crystal growth, 1998, Vol.183 (4), p.519-524

1998

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Viscosity of Hg0.84Zn0.16Te pseudobinary melt

Journal of applied physics, 1996-06, Vol.79 (12), p.9080-9083

1996

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Electrical properties and compositional distributions of CVT and PVT grown Hg1-xCdxTe epilayers

Journal of electronic materials, 1994, Vol.23 (1), p.25-29

1994

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Gibbs Energy of Formation and Partial Pressure of Hg over Te‐Saturated HgTe ( c ) Between 385 and 724 K

Journal of the Electrochemical Society, 1989-12, Vol.136 (12), p.3837-3841

1989

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Mass flux of ZnSe1-xSx and ZnSe1-xTex by physical vapor transport

Journal of crystal growth, 1997-02, Vol.171 (3-4), p.516-524

1997

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Mass flux and partial pressures of ZnSe by physical vapor transport

Journal of crystal growth, 1996-09, Vol.166 (1-4), p.736-744

1996

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Seeded growth of HgZnTe by directional solidification using an initial composition profile simulating a “diffusion-boundary” layer

Journal of crystal growth, 1997-04, Vol.174 (1), p.267-271

1997

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Partial pressures of Hg and Te2 over (Hg1− x Zn x )1− y Te y solid solutions

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1990-03, Vol.8 (2), p.1086-1092

1990

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Crystal growth of selected II-VI semiconducting alloys by directional solidification. Part I Ground-based experiments

Journal of materials science, 1997-07, Vol.32 (14), p.3765-3768

1997

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The direct determination of the vacancy concentration P-T phase diagram of Hg0.8Cd0.2Te and Hg0.6Cd0.4Te by dynamic mass-loss measurements

Journal of electronic materials, 1990-08, Vol.19 (8), p.761-771

1990

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The direct determination of the vacancy concentration and P-T phase diagram of HgTe by dynamic mass-loss measurements

Journal of electronic materials, 1990-02, Vol.19 (2), p.159-169

1990

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Partial Pressures and Thermodynamic Properties of PbTe ‐ SnTe Solid and Liquid Solutions with 50, 70, and 100 Mole Percent SnTe

Journal of the Electrochemical Society, 1991-08, Vol.138 (8), p.2460-2465

1991

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Explicit incorporation of the energy-band structure into an analysis of the defect chemistry of PbTe and SnTe

Journal of electronic materials, 1989-05, Vol.18 (3), p.421-443

1989

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Some general properties of the liquidus surface of a pseudobinary solid solution (A1-uBμ)1-δC1+δ

The Journal of physics and chemistry of solids, 1987, Vol.48 (4), p.323-328

1987

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Segregation coefficients of impurities in selenium by zone refining

Growth of HgZnTe by directional solidification in a magnetic field

Relationship between GRHL2 gene and tumor of the digestive system: research progress

Vapor growth and characterization of ZnSeTe solid solutions

Growth by CVT and characterization of Hg1-xCdxTe epitaxial layers

Growth of Hg1−xCdxTe epitaxial layers on (100) CdTe by chemical vapor transport under normal and reduced gravity conditions

Mass flux of ZnSe by physical vapor transport

Crystal growth of HgZnTe alloy by directional solidification in low gravity environment

Selenium precipitation in ZnSe crystals grown by physical vapor transport

Effects of growth conditions on the composition of CVT and PVT grown Hg1-x Cd x Te epitaxial layers

Thermodynamic analysis and mass flux of the HgZnTe-HgI2 chemical vapor transport system

Vapor-phase stoichiometry and heat treatment of CdTe starting material for physical vapor transport

Viscosity of Hg0.84Zn0.16Te pseudobinary melt

Electrical properties and compositional distributions of CVT and PVT grown Hg1-xCdxTe epilayers

Gibbs Energy of Formation and Partial Pressure of Hg over Te‐Saturated HgTe ( c ) Between 385 and 724 K

Mass flux of ZnSe1-xSx and ZnSe1-xTex by physical vapor transport

Mass flux and partial pressures of ZnSe by physical vapor transport

Seeded growth of HgZnTe by directional solidification using an initial composition profile simulating a “diffusion-boundary” layer

Partial pressures of Hg and Te2 over (Hg1− x Zn x )1− y Te y solid solutions

Crystal growth of selected II-VI semiconducting alloys by directional solidification. Part I Ground-based experiments

The direct determination of the vacancy concentration P-T phase diagram of Hg0.8Cd0.2Te and Hg0.6Cd0.4Te by dynamic mass-loss measurements

The direct determination of the vacancy concentration and P-T phase diagram of HgTe by dynamic mass-loss measurements

Partial Pressures and Thermodynamic Properties of PbTe ‐ SnTe Solid and Liquid Solutions with 50, 70, and 100 Mole Percent SnTe

Explicit incorporation of the energy-band structure into an analysis of the defect chemistry of PbTe and SnTe

Some general properties of the liquidus surface of a pseudobinary solid solution (A1-uBμ)1-δC1+δ

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