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Extraction of MOSFET threshold voltage, series resistance, effective channel length, and inversion layer mobility from small-signal channel conductance measurement

IEEE transactions on electron devices, 2001-12, Vol.48 (12), p.2870-2874

2001

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Extraction of SOS MOSFET RF equivalent circuit elements by LCR meter measurements

Electronics letters, 2010-06, Vol.46 (12), p.863-864

2010

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A new method of threshold voltage extraction via MOSFET gate-to-substrate capacitance measurement

IEEE transactions on electron devices, 2001-08, Vol.48 (8), p.1742-1744

2001

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Effects of nitric oxide annealing of thermally grown silicon dioxide characteristics

IEEE electron device letters, 1995-08, Vol.16 (8), p.345-347

1995

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Inverse modeling of two-dimensional MOSFET dopant profile via capacitance of the source/drain gated diode

IEEE transactions on electron devices, 2000-07, Vol.47 (7), p.1385-1392

2000

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The electrical properties of sub-5-nm oxynitride dielectrics prepared in a nitric oxide ambient using rapid thermal processing

IEEE electron device letters, 1994-12, Vol.15 (12), p.516-518

1994

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High quality ultrathin dielectric films grown on silicon in a nitric oxide ambient

Applied physics letters, 1994-06, Vol.64 (26), p.3584-3586

1994

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Analysis of the gate capacitance measurement technique and its application for the evaluation of hot-carrier degradation in submicrometer MOSFETs

Microelectronics and reliability, 2001, Vol.41 (2), p.201-209

2001

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Observation of MOSFET degradation due to electrical stressing through gate-to-source and gate-to-drain capacitance measurement

IEEE electron device letters, 1991-07, Vol.12 (7), p.366-368

1991

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Teaching semiconductor device physics with two-dimensional numerical solver

IEEE transactions on education, 1999-02, Vol.42 (1), p.50-58

1999

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Monitoring oxide quality using the spread of the dC/dV peak in scanning capacitance microscopy measurements

IEEE electron device letters, 2003-10, Vol.24 (10), p.667-670

2003

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Characterization of charge trapping in submicrometer NMOSFET's by gate capacitance measurements

IEEE electron device letters, 1992-11, Vol.13 (11), p.587-589

1992

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Measurement of MOSFET substrate dopant profile via inversion layer-to-substrate capacitance

IEEE transactions on electron devices, 1998-08, Vol.45 (8), p.1732-1736

1998

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Extraction of RF equivalent circuit and semiconductor parameters of SOS MOSFETs from S-Parameter measurements

2010 Conference on Optoelectronic and Microelectronic Materials and Devices, 2010, p.147-148

2010

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Characteristics of small-signal capacitances of silicon-on-sapphire MOSFETs

Electronics letters, 2003-02, Vol.39 (4), p.407

2003

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Dopant extraction from scanning capacitance microscopy measurements of p-n junctions using combined inverse modeling and forward simulation

Applied physics letters, 2002-06, Vol.80 (25), p.4837-4839

2002

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Voltage shifts of Fowler-Nordheim tunneling J- V plots in thin gate oxide MOS structures due to trapped charges

Solid-state electronics, 1989-06, Vol.32 (6), p.507-511

1989

Volltextzugriff (PDF)

Characterisation of Dielectric Damage in MOS Capacitors by a New Current Transient Measurement Technique

MRS proceedings, 1996, Vol.429, Article 245

1996

Volltextzugriff (PDF)

Logarithmic time dependence of pMOSFET degradation observed from gate capacitance

Electronics letters, 1993, Vol.29 (4), p.418-420, Article 418

1993

Volltextzugriff (PDF)

Creation and termination of substrate deep depletion in thin oxide MOS Capacitors by charge tunneling

IEEE electron device letters, 1983-10, Vol.4 (10), p.350-352

1983

Volltextzugriff (PDF)

SOS junctionless MOSFETs vs. inversion channel MOSFETs: Doubling the device speed without changing the technology

Microwave and optical technology letters, 2012-12, Vol.54 (12), p.2755-2757

2012

Volltextzugriff (PDF)

Characteristics of Dielectrics Formed or Annealed in a Nitric Oxide Ambient

MRS proceedings, 1995, Vol.387, Article 233

1995

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The impact resistance of a ribbon-reinforced composite

Journal of materials science, 1982-08, Vol.17 (8), p.2245-2256

Yeow, Y T

1982

Volltextzugriff (PDF)

Extraction of SOS MOSFET RF equivalent circuit elements by LCR meter measurements

Electronics letters, 2010-06, Vol.46 (12), p.1-1

2010

Volltextzugriff (PDF)

A modification to the Fowler-Nordheim tunneling current calculation for thin MOS structures

Solid-state electronics, 1988-06, Vol.31 (6), p.1113-1118

1988

Volltextzugriff (PDF)

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Extraction of MOSFET threshold voltage, series resistance, effective channel length, and inversion layer mobility from small-signal channel conductance measurement

Extraction of SOS MOSFET RF equivalent circuit elements by LCR meter measurements

A new method of threshold voltage extraction via MOSFET gate-to-substrate capacitance measurement

Effects of nitric oxide annealing of thermally grown silicon dioxide characteristics

Inverse modeling of two-dimensional MOSFET dopant profile via capacitance of the source/drain gated diode

The electrical properties of sub-5-nm oxynitride dielectrics prepared in a nitric oxide ambient using rapid thermal processing

High quality ultrathin dielectric films grown on silicon in a nitric oxide ambient

Analysis of the gate capacitance measurement technique and its application for the evaluation of hot-carrier degradation in submicrometer MOSFETs

Observation of MOSFET degradation due to electrical stressing through gate-to-source and gate-to-drain capacitance measurement

Teaching semiconductor device physics with two-dimensional numerical solver

Monitoring oxide quality using the spread of the dC/dV peak in scanning capacitance microscopy measurements

Characterization of charge trapping in submicrometer NMOSFET's by gate capacitance measurements

Measurement of MOSFET substrate dopant profile via inversion layer-to-substrate capacitance

Extraction of RF equivalent circuit and semiconductor parameters of SOS MOSFETs from S-Parameter measurements

Characteristics of small-signal capacitances of silicon-on-sapphire MOSFETs

Dopant extraction from scanning capacitance microscopy measurements of p-n junctions using combined inverse modeling and forward simulation

Voltage shifts of Fowler-Nordheim tunneling J- V plots in thin gate oxide MOS structures due to trapped charges

Characterisation of Dielectric Damage in MOS Capacitors by a New Current Transient Measurement Technique

Logarithmic time dependence of pMOSFET degradation observed from gate capacitance

Creation and termination of substrate deep depletion in thin oxide MOS Capacitors by charge tunneling

SOS junctionless MOSFETs vs. inversion channel MOSFETs: Doubling the device speed without changing the technology

Characteristics of Dielectrics Formed or Annealed in a Nitric Oxide Ambient

The impact resistance of a ribbon-reinforced composite

Extraction of SOS MOSFET RF equivalent circuit elements by LCR meter measurements

A modification to the Fowler-Nordheim tunneling current calculation for thin MOS structures

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