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A 24-GHz transformer-based single-in differential-out CMOS low-noise amplifier

2009 IEEE Radio Frequency Integrated Circuits Symposium, 2009, p.299-302

2009

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40-GHz vital sign detection of heartbeat using synchronized motion technique for respiration signal suppression

2012 42nd European Microwave Conference, 2012, p.21-24

2012

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A 57-66 GHz power amplifier with a linearization technique in 65-nm CMOS process

2014 44th European Microwave Conference, 2014, p.1253-1256

2014

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A 57-66 GHz power amplifier with a linearization technique in 65-nm CMOS process

2014 9th European Microwave Integrated Circuit Conference, 2014, p.309-312

2014

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A 60-GHz Power Amplifier Design Using Dual-Radial Symmetric Architecture in 90-nm Low-Power CMOS

IEEE transactions on microwave theory and techniques, 2013-03, Vol.61 (3), p.1280-1290

2013

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Abnormal Relationship Between Hot Carrier Stress Degradation and Body Current in High-k Metal Gate in the 14-nm Node

IEEE electron device letters, 2019-04, Vol.40 (4), p.498-501

2019

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Abnormal trend in hot carrier degradation with fin profile in short channel FinFET devices at 14 nm node

Semiconductor science and technology, 2022-04, Vol.37 (4), p.45010

2022

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Abnormal Two-Stage Degradation Under Hot Carrier Injection With Lateral Double-Diffused MOS With 0.13- \mu m Bipolar-CMOS-DMOS Technology

IEEE transactions on electron devices, 2023-07, Vol.70 (7), p.1-5

2023

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Advanced Low-Temperature-High-Pressure Hydrogen Treatment for Interface Defect Passivation in Si- and SiGe-Channel MOSCAPs

IEEE transactions on electron devices, 2020-12, Vol.67 (12), p.5403-5407

2020

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An Aging-Aware CMOS SRAM Structure Design for Boolean Logic In-Memory Computing

2021 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT), 2021, p.1-4

2021

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Analysis of abnormal threshold voltage shift induced by surface donor state in GaN HEMT on SiC substrate

Applied physics letters, 2022-06, Vol.120 (23)

2022

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Analysis of Breakdown-Voltage Increase on SiC Junction Barrier Schottky Diode Under Negative Bias Stress

IEEE transactions on electron devices, 2023-01, Vol.70 (1), p.1-5

2023

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Analysis of Edge Effect Occurring in Non-Volatile Ferroelectric Transistors

IEEE electron device letters, 2021-03, Vol.42 (3), p.315-318

2021

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Analysis of Hump Effect Induced by Positive Bias Temperature Instability in the Local Oxidation of Silicon n-MOSFETs

IEEE transactions on device and materials reliability, 2023-06, Vol.23 (2), p.263-268

2023

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A built-in self-repair design for rams with 2-D redundancv

IEEE transactions on very large scale integration (VLSI) systems, 2005, Vol.13 (6), p.742-745

2005

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A built-in self-repair design for RAMs with 2-D redundancy

IEEE transactions on very large scale integration (VLSI) systems, 2005-06, Vol.13 (6), p.742-745

2005

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A built-in self-repair scheme for semiconductor memories with 2-d redundancy

International Test Conference, 2003. Proceedings. ITC 2003, 2003, Vol.1, p.393-402

2003

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Characterizing the departure process of a single server queue from the embedded Markov renewal process at departures

Queueing systems, 2000, Vol.35 (1-4), p.381-395

2000

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Comparison of the Hot Carrier Degradation of N- and P-Type Fin Field-Effect Transistors in 14-nm Technology Nodes

IEEE electron device letters, 2021-10, Vol.42 (10), p.1420-1423

2021

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The correlation between striatal dopamine D 2 /D 3 receptor availability and verbal intelligence quotient in healthy volunteers

Psychological medicine, 2006-04, Vol.36 (4), p.547-554

2006

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The correlation between striatal dopamine D2/D3 receptor availability and verbal intelligence quotient in healthy volunteers

Psychological medicine, 2006-04, Vol.36 (4), p.547-554

2006

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Cross-Analysis of Land and Runoff Variations in Response to Urbanization on Basin, Watershed, and City Scales with/without Green Infrastructures

Water (Basel), 2018-02, Vol.10 (2), p.106

2018

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Design of a 0.13-µm V-band millimeter-wave CMOS low-noise amplifier and measurement methodology

2008 Asia-Pacific Microwave Conference, 2008, p.1-4

2008

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Design of a 60-GHz down-converting dual-gate mixer in 130-nm CMOS technology

2009 European Microwave Conference (EuMC), 2009, p.405-408

2009

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Effect of deposition temperature on electrical properties of one-transistor-one-capacitor (1T1C) FeRAM devices

Applied physics letters, 2020-07, Vol.117 (2)

2020

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A 24-GHz transformer-based single-in differential-out CMOS low-noise amplifier

40-GHz vital sign detection of heartbeat using synchronized motion technique for respiration signal suppression

A 57-66 GHz power amplifier with a linearization technique in 65-nm CMOS process

A 57-66 GHz power amplifier with a linearization technique in 65-nm CMOS process

A 60-GHz Power Amplifier Design Using Dual-Radial Symmetric Architecture in 90-nm Low-Power CMOS

Abnormal Relationship Between Hot Carrier Stress Degradation and Body Current in High-k Metal Gate in the 14-nm Node

Abnormal trend in hot carrier degradation with fin profile in short channel FinFET devices at 14 nm node

Abnormal Two-Stage Degradation Under Hot Carrier Injection With Lateral Double-Diffused MOS With 0.13- \mu m Bipolar-CMOS-DMOS Technology

Advanced Low-Temperature-High-Pressure Hydrogen Treatment for Interface Defect Passivation in Si- and SiGe-Channel MOSCAPs

An Aging-Aware CMOS SRAM Structure Design for Boolean Logic In-Memory Computing

Analysis of abnormal threshold voltage shift induced by surface donor state in GaN HEMT on SiC substrate

Analysis of Breakdown-Voltage Increase on SiC Junction Barrier Schottky Diode Under Negative Bias Stress

Analysis of Edge Effect Occurring in Non-Volatile Ferroelectric Transistors

Analysis of Hump Effect Induced by Positive Bias Temperature Instability in the Local Oxidation of Silicon n-MOSFETs

A built-in self-repair design for rams with 2-D redundancv

A built-in self-repair design for RAMs with 2-D redundancy

A built-in self-repair scheme for semiconductor memories with 2-d redundancy

Characterizing the departure process of a single server queue from the embedded Markov renewal process at departures

Comparison of the Hot Carrier Degradation of N- and P-Type Fin Field-Effect Transistors in 14-nm Technology Nodes

The correlation between striatal dopamine D 2 /D 3 receptor availability and verbal intelligence quotient in healthy volunteers

The correlation between striatal dopamine D2/D3 receptor availability and verbal intelligence quotient in healthy volunteers

Cross-Analysis of Land and Runoff Variations in Response to Urbanization on Basin, Watershed, and City Scales with/without Green Infrastructures

Design of a 0.13-µm V-band millimeter-wave CMOS low-noise amplifier and measurement methodology

Design of a 60-GHz down-converting dual-gate mixer in 130-nm CMOS technology

Effect of deposition temperature on electrical properties of one-transistor-one-capacitor (1T1C) FeRAM devices

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