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A 0.063 µm2 FinFET SRAM cell demonstration with conventional lithography using a novel integration scheme with aggressively scaled fin and gate pitch

2010 Symposium on VLSI Technology, 2010, p.19-20

2010

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0.1-/spl mu/m CMOS technology for high-speed logic and system LSIs with SiO/SiN/poly-Si/W gate-system

International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), 1999, p.937-939

1999

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0.1 T/D BSU TESTS OF BATTLE RIVER COAL LIQUEFACTION AND ITS COPROCESSING WITH TAR SAND BITUMENS

1991 International Conference on Coal Science Proceedings, 1991, p.822-825

1991

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A 0.13 [Formula Omitted] SiGe BiCMOS Technology Featuring f[Formula Omitted]/f[Formula Omitted] of 240/330 GHz and Gate Delays Below 3 ps

IEEE journal of solid-state circuits, 2010-09, Vol.45 (9), p.1678

2010

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A 0.13 mu hbox m SiGe BiCMOS Technology Featuring f T /f max of 240/330 GHz and Gate Delays Below 3 ps

IEEE journal of solid-state circuits, 2010-09, Vol.45 (9), p.1678-1686

2010

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A 0.13 \mu} SiGe BiCMOS Technology Featuring f /f of 240/330 GHz and Gate Delays Below 3 ps

IEEE journal of solid-state circuits, 2010-09, Vol.45 (9), p.1678-1686

2010

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A 0.13 μm SiGe BiCMOS Technology Featuring fT/fmax of 240/330 GHz and Gate Delays Below 3 ps : The 23rd bipolar/BICMOS circuits and technology meeting

IEEE journal of solid-state circuits, 2010, Vol.45 (9), p.1678-1686

2010

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A 0.13µm SiGe BiCMOS technology featuring fT/fmax of 240/330 GHz and gate delays below 3 ps

2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2009, p.166-169

2009

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A 0.15 /spl mu/m logic based embedded DRAM technology featuring 0.425 /spl mu/m/sup 2/ stacked cell using MIM (metal-insulator-metal) capacitor

2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184), 2001, p.29-30

2001

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0.43 THz emission from high-T(c) superconducting emitters optimized at 77 K

Journal of physics. Condensed matter, 2016-01, Vol.28 (2), p.025701-025701

2016

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0.43 THz emission from high- T c superconducting emitters optimized at 77 K

Journal of physics. Condensed matter, 2016-01, Vol.28 (2), p.25701

2016

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0.43 THz emission from high-T sub(c) superconducting emitters optimized at 77 K

Journal of physics. Condensed matter, 2016-01, Vol.28 (2)

2016

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0.43 THz emission from high-Tc superconducting emitters optimized at 77 K

Journal of physics. Condensed matter, 2015-12, Vol.28 (2)

2015

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0.65 V device design with high-performance and high-density 100 nm CMOS technology for low operation power application

2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303), 2002, p.122-123

2002

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0142 Feasibility study of fluorouracil/epirubicin/cyclophosphamide (FEC75) followed by docetaxel (DOC) as adjuvant chemotherapy in Japanese patients with node positive breast cancer

Breast (Edinburgh), 2009, Vol.18, p.S54-S54

2009

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0746 Dynamics of Sleep Stage Transitions in Patients with Narcolepsy and Other Hypersomnias

Sleep (New York, N.Y.), 2020-05, Vol.43 (Supplement_1), p.A283-A284

2020

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0978 PREVENTION OF SUDDEN UNEXPECTED INFANT DEATH (SUID) DURING SLEEP AT NURSERY SCHOOLS

Sleep (New York, N.Y.), 2017-04, Vol.40 (suppl_1), p.A363-A363

2017

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1.06 - The Effects of Helium in Irradiated Structural Alloys

Comprehensive Nuclear Materials, 2012, p.141-193

2012

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1.28 Tbit/s-70-km OTDM femtosecond-pulse transmission using third- and fourth-order simultaneous dispersion compensation with a phase modulator

Electronics & communications in Japan. Part 1, Communications, 2003-03, Vol.86 (3), p.68-79

2003

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1.28Tbit/s-70km OTDM transmission using third- and fourth-order simultaneous dispersion compensation with a phase modulator

Electronics letters, 2000-11, Vol.36 (24), p.1-1

2000

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1.28Tbit/s-70km OTDM transmission using third- and fourth-order simultaneous dispersion compensation with a phase modulator

Electronics letters, 2000-11, Vol.36 (24), p.2027-2029

2000

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1,3-oxazines and related compounds. VII: Unusual dimerization of 2-alkyl-4H-1,3-thiazin-4-derivatives and the structures of the dimers

Chemical & pharmaceutical bulletin, 1983, Vol.31 (6), p.1936-1942

1983

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1.5 nm equivalent thickness Ta/sub 2/O/sub 5/ high-k dielectric with rugged Si suited for mass production of high density DRAMs

International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217), 1998, p.755-758

1998

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1-ACYL-3-SUBSTITUTED IMIDAZOLIUM SALTS AS HIGHLY REACTIVE ACYLATING AGENTS

Chemical and Pharmaceutical Bulletin, 1982/11/25, Vol.30(11), pp.4242-4244

1982

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1 beta-Methyl-2-(5-substituted pyrrolidin-3-ylthio)carbapenems. 3. Synthesis and antibacterial activity of BO-2727 and its related compounds

Journal of antibiotics, 1997-07, Vol.50 (7), p.598-613

1997

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A 0.063 µm2 FinFET SRAM cell demonstration with conventional lithography using a novel integration scheme with aggressively scaled fin and gate pitch

0.1-/spl mu/m CMOS technology for high-speed logic and system LSIs with SiO/SiN/poly-Si/W gate-system

0.1 T/D BSU TESTS OF BATTLE RIVER COAL LIQUEFACTION AND ITS COPROCESSING WITH TAR SAND BITUMENS

A 0.13 [Formula Omitted] SiGe BiCMOS Technology Featuring f[Formula Omitted]/f[Formula Omitted] of 240/330 GHz and Gate Delays Below 3 ps

A 0.13 mu hbox m SiGe BiCMOS Technology Featuring f T /f max of 240/330 GHz and Gate Delays Below 3 ps

A 0.13 \mu} SiGe BiCMOS Technology Featuring f /f of 240/330 GHz and Gate Delays Below 3 ps

A 0.13 μm SiGe BiCMOS Technology Featuring fT/fmax of 240/330 GHz and Gate Delays Below 3 ps : The 23rd bipolar/BICMOS circuits and technology meeting

A 0.13µm SiGe BiCMOS technology featuring fT/fmax of 240/330 GHz and gate delays below 3 ps

A 0.15 /spl mu/m logic based embedded DRAM technology featuring 0.425 /spl mu/m/sup 2/ stacked cell using MIM (metal-insulator-metal) capacitor

0.43 THz emission from high-T(c) superconducting emitters optimized at 77 K

0.43 THz emission from high- T c superconducting emitters optimized at 77 K

0.43 THz emission from high-T sub(c) superconducting emitters optimized at 77 K

0.43 THz emission from high-Tc superconducting emitters optimized at 77 K

0.65 V device design with high-performance and high-density 100 nm CMOS technology for low operation power application

0142 Feasibility study of fluorouracil/epirubicin/cyclophosphamide (FEC75) followed by docetaxel (DOC) as adjuvant chemotherapy in Japanese patients with node positive breast cancer

0746 Dynamics of Sleep Stage Transitions in Patients with Narcolepsy and Other Hypersomnias

0978 PREVENTION OF SUDDEN UNEXPECTED INFANT DEATH (SUID) DURING SLEEP AT NURSERY SCHOOLS

1.06 - The Effects of Helium in Irradiated Structural Alloys

1.28 Tbit/s-70-km OTDM femtosecond-pulse transmission using third- and fourth-order simultaneous dispersion compensation with a phase modulator

1.28Tbit/s-70km OTDM transmission using third- and fourth-order simultaneous dispersion compensation with a phase modulator

1.28Tbit/s-70km OTDM transmission using third- and fourth-order simultaneous dispersion compensation with a phase modulator

1,3-oxazines and related compounds. VII: Unusual dimerization of 2-alkyl-4H-1,3-thiazin-4-derivatives and the structures of the dimers

1.5 nm equivalent thickness Ta/sub 2/O/sub 5/ high-k dielectric with rugged Si suited for mass production of high density DRAMs

1-ACYL-3-SUBSTITUTED IMIDAZOLIUM SALTS AS HIGHLY REACTIVE ACYLATING AGENTS

1 beta-Methyl-2-(5-substituted pyrrolidin-3-ylthio)carbapenems. 3. Synthesis and antibacterial activity of BO-2727 and its related compounds

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