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Electronic and structural characterisation of Cu3BiS3 thin films for the absorber layer of sustainable photovoltaics

Thin solid films, 2014-07, Vol.562, p.195-199

2014

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Diffusion Limitation of Dark Current in the nBn Structures Based on the MBE HgCdTe

Journal of communications technology & electronics, 2022-03, Vol.67 (3), p.308-312

2022

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Strong interband Faraday rotation in 3D topological insulator Bi2Se3

Scientific reports, 2016-01, Vol.6 (1), p.19087-19087, Article 19087

2016

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Capacitive Properties of Metal–Insulator–Semiconductor Systems Based on an HgCdTe nBn Structure Grown by Molecular Beam Epitaxy

Journal of communications technology & electronics, 2019-03, Vol.64 (3), p.289-293

2019

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Photomodulation Optical Spectroscopy of CdHgTe Graded Band Gap Heterostructures

Semiconductors (Woodbury, N.Y.), 2024-05, Vol.58 (5), p.422-428

2024

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Fabrication and characterisation of Cu(In,Ga)Se2 solar cells on polyimide

Thin solid films, 2011-08, Vol.519 (21), p.7264-7267

2011

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Temperature Dependence of the Spectra of Optical Constants of CdTe in the Region of the Absorption Edge

Optics and spectroscopy, 2024-04, Vol.132 (4), p.403-408

2024

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In situ Ellipsometric Control of Growth Processes of ZnTe and CdTe Buffer Layers in Technology of Molecular Beam Epitaxy of Mercury Cadmium Telluride

Semiconductors (Woodbury, N.Y.), 2024, Vol.58 (1), p.67-72

2024

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Study of MIS structures based on CdHgTe and HfO2 applied by PEALD

Applied physics letters, 2022-08, Vol.121 (8)

2022

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Optical probing of extended defects in CdTe virtual substrates via isolated emitters produced by weakly perturbed fragments of partial dislocations

Applied physics letters, 2019-12, Vol.115 (23)

2019

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An Experimental Study of the Dynamic Resistance in Surface Leakage Limited nBn Structures Based on HgCdTe Grown by Molecular Beam Epitaxy

Journal of electronic materials, 2021-08, Vol.50 (8), p.4599-4605

2021

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Reconversion of the CdHgTe conductivity type after plasma etching process at low temperature

Applied physics letters, 2020-02, Vol.116 (8)

2020

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Photoluminescence of Arsenic Doped Epitaxial Films of Cd0.3Hg0.7Te

Semiconductors (Woodbury, N.Y.), 2024-04, Vol.58 (4), p.345-348

2024

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Optical properties of high quality Cu2ZnSnSe4 thin films

Applied physics letters, 2011-08, Vol.99 (6)

2011

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Admittance of metal-insulator-semiconductor devices based on HgCdTe nBn structures

Semiconductor science and technology, 2020-05, Vol.35 (5), p.55026

2020

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The band structure of CuInTe2 studied by optical reflectivity

Applied physics letters, 2019-02, Vol.114 (6)

2019

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Erratum to: Photoluminescence of Arsenic Doped Epitaxial Films of Cd0.3Hg0.7Te

Semiconductors (Woodbury, N.Y.), 2024, Vol.58 (6), p.545-545

2024

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Temperature Dependence of Optical Reflection Spectra of Cuinse2 Single Crystals with the Chalcopyrite Structure

Journal of applied spectroscopy, 2024-07, Vol.91 (3), p.563-569

2024

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A luminescence study of Cu2ZnSnSe4/Mo/glass films and solar cells with near stoichiometric copper content

Journal of physics. D, Applied physics, 2019-01, Vol.52 (5)

2019

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Accumulation of Arsenic Implantation-Induced Donor Defects in Hg0.7Cd0.3Te Heteroepitaxial Structures

Journal of electronic materials, 2021-06, Vol.50 (6), p.3714-3721

2021

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Structural, optical and electronic properties of the wide bandgap topological insulator Bi1.1Sb0.9Te2S

Journal of alloys and compounds, 2022-01, Vol.890, p.161824, Article 161824

2022

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Optical Studies of Molecular-Beam Epitaxy-Grown Hg1−xCdxTe with x = 0.7–0.8

Journal of electronic materials, 2020-08, Vol.49 (8), p.4642-4646

2020

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Electrical profiling of arsenic-implanted HgCdTe films performed with discrete mobility spectrum analysis

Semiconductor science and technology, 2019-03, Vol.34 (3), p.35009

2019

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Diffusion-limited dark currents in mid-wave infrared HgCdTe-based nBn structures with Al2O3 passivation

Journal of physics. D, Applied physics, 2020, Vol.53 (5)

2020

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Effect of 4-MeV Electron Irradiation on Radiative Recombination of Cu(In,Ga)(S,Se)2 Thin Films in Solar Cells

Journal of applied spectroscopy, 2024-09, Vol.91 (4), p.734-741

2024

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Electronic and structural characterisation of Cu3BiS3 thin films for the absorber layer of sustainable photovoltaics

Diffusion Limitation of Dark Current in the nBn Structures Based on the MBE HgCdTe

Strong interband Faraday rotation in 3D topological insulator Bi2Se3

Capacitive Properties of Metal–Insulator–Semiconductor Systems Based on an HgCdTe nBn Structure Grown by Molecular Beam Epitaxy

Photomodulation Optical Spectroscopy of CdHgTe Graded Band Gap Heterostructures

Fabrication and characterisation of Cu(In,Ga)Se2 solar cells on polyimide

Temperature Dependence of the Spectra of Optical Constants of CdTe in the Region of the Absorption Edge

In situ Ellipsometric Control of Growth Processes of ZnTe and CdTe Buffer Layers in Technology of Molecular Beam Epitaxy of Mercury Cadmium Telluride

Study of MIS structures based on CdHgTe and HfO2 applied by PEALD

Optical probing of extended defects in CdTe virtual substrates via isolated emitters produced by weakly perturbed fragments of partial dislocations

An Experimental Study of the Dynamic Resistance in Surface Leakage Limited nBn Structures Based on HgCdTe Grown by Molecular Beam Epitaxy

Reconversion of the CdHgTe conductivity type after plasma etching process at low temperature

Photoluminescence of Arsenic Doped Epitaxial Films of Cd0.3Hg0.7Te

Optical properties of high quality Cu2ZnSnSe4 thin films

Admittance of metal-insulator-semiconductor devices based on HgCdTe nBn structures

The band structure of CuInTe2 studied by optical reflectivity

Erratum to: Photoluminescence of Arsenic Doped Epitaxial Films of Cd0.3Hg0.7Te

Temperature Dependence of Optical Reflection Spectra of Cuinse2 Single Crystals with the Chalcopyrite Structure

A luminescence study of Cu2ZnSnSe4/Mo/glass films and solar cells with near stoichiometric copper content

Accumulation of Arsenic Implantation-Induced Donor Defects in Hg0.7Cd0.3Te Heteroepitaxial Structures

Structural, optical and electronic properties of the wide bandgap topological insulator Bi1.1Sb0.9Te2S

Optical Studies of Molecular-Beam Epitaxy-Grown Hg1−xCdxTe with x = 0.7–0.8

Electrical profiling of arsenic-implanted HgCdTe films performed with discrete mobility spectrum analysis

Diffusion-limited dark currents in mid-wave infrared HgCdTe-based nBn structures with Al2O3 passivation

Effect of 4-MeV Electron Irradiation on Radiative Recombination of Cu(In,Ga)(S,Se)2 Thin Films in Solar Cells

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