UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

InAsSb/InAsSbP current-tunable laser with narrow spectral line width

Applied physics. B, Lasers and optics, 2003-06, Vol.76 (6), p.633-637

2003

Volltextzugriff (PDF)

Increasing the emission power of LEDs (λ = 1.7–2.4 μm) by changing the light direction in the GaSb/GaInAsSb/GaAlAsSb heterostructure

Journal of physics. Conference series, 2013-01, Vol.461 (1), p.12036-5

2013

Volltextzugriff (PDF)

Room-temperature photoluminescence of Ga0.96In0.04 As0.11Sb0.89 lattice matched to InAs

Journal of electronic materials, 2004-08, Vol.33 (8), p.867-872

2004

Volltextzugriff (PDF)

Electrical Characteristics and Temperature Dependence of Photovoltaic Parameters of GaInAsSb Based TPV Diode

Acta physica Polonica, A, 2016-04, Vol.129 (4), p.767-769

2016

Volltextzugriff (PDF)

Powerful mid-infrared light emitting diodes for pollution monitoring

Electronics letters, 1997-01, Vol.33 (1), p.86

1997

Volltextzugriff (PDF)

Powerful InAsSbP/InAsSb light emitting diodes grown by MOVPE

Journal of crystal growth, 2003-02, Vol.248, p.296-300

2003

Volltextzugriff (PDF)

Electrical Properties of GaInAsSb/GaSb/GaAlAsSb Double Heterostructure with Low Diameter

Acta physica Polonica, A, 2014-02, Vol.125 (2), p.411-413

2014

Volltextzugriff (PDF)

Interface-induced optical and transport phenomena in type II broken-gap single heterojunctions

Semiconductor science and technology, 2004-10, Vol.19 (10), p.R109-R128

2004

Volltextzugriff (PDF)

Diode laser spectroscopy using two modes of an InAsSb/InAsSbP laser near 3.6 μm

Applied physics. B, Lasers and optics, 2000-10, Vol.71 (4), p.481-485

2000

Volltextzugriff (PDF)

Numerical analysis of the energy-band diagram of type-II p-GaInAsSb/p-InAs heterojunction and size-quantization levels at the interface

Semiconductor science and technology, 2001-09, Vol.16 (9), p.812-815, Article 812

2001

Volltextzugriff (PDF)

The Development of Nuclear Frequency Standard with the Use of Ion Crystals Manipulation System

Physics procedia, 2015, Vol.72, p.245-248

2015

Volltextzugriff (PDF)

Two-dimensional semimetal channel in a type II broken-gap GaInAsSb/InAs single heterojunction

Physica status solidi. A, Applied research, 2003-01, Vol.195 (1), p.194-198

2003

Volltextzugriff (PDF)

Electroluminescence and lasing in type II Ga(Al)Sb/InGaAsSb heterostructures in the spectral range 3–5 μm

Applied surface science, 1999-04, Vol.142 (1), p.257-261

1999

Volltextzugriff (PDF)

Anisotropic polarization of radiation in quantum-confinement whispering-gallery-mode lasers

Technical physics letters, 2012-02, Vol.38 (2), p.103-105

2012

Volltextzugriff (PDF)

High-power mid-infrared light emitting diodes grown by MOVPE

IEE proceedings. Optoelectronics, 2002-02, Vol.149 (1), p.36-39

2002

Volltextzugriff (PDF)

Room-Temperature Photoluminescence of Ga^sub 0.96^In^sub 0.04^As^sub 0.11^Sb^sub 0.89^ Lattice Matched to InAs

Journal of electronic materials, 2004-08, Vol.33 (8), p.867

2004

Volltextzugriff (PDF)

Room-temperature photoluminescence of Ga0.96In0.04As0.11Sb0.89 lattice matched to InAs

Journal of electronic materials, 2004-08, Vol.33 (8), p.867-872

2004

Volltextzugriff (PDF)

DX center in AlGaAsSb:Te and a mechanism of its ionization

Journal of applied physics, 1996-03, Vol.79 (5), p.2467-2472

1996

Volltextzugriff (PDF)

Improvement of the stability of the tractor within the units with front mounting

Izvestiya MGTU MAMI, 2011-01, Vol.5 (1), p.26-31

2011

Volltextzugriff (PDF)

Room-temperature photoluminescence of Ga0.96In0.04 As0.11Sb0.89 lattice matched to InAs

Journal of electronic materials, 2004, Vol.33 (8), p.867-872

2004

Volltextzugriff (PDF)

Liquid-phase epitaxial growth of GaSb-related compounds on sulphide treated (100) GaSb substrates

IEE proceedings. Optoelectronics, 1998-10, Vol.145 (5), p.303-306

1998

Volltextzugriff (PDF)

Room-temperature electroluminescence of AlSb∕InAsSb single quantum wells grown by metal organic vapor phase epitaxy

Applied physics letters, 2006-03, Vol.88 (13)

2006

Volltextzugriff (PDF)

A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy

Applied physics letters, 2003-05, Vol.82 (21), p.3782-3784

2003

Volltextzugriff (PDF)

Light-Emitting Diodes Based on GaSb Alloys for the 1.6–4.4 μm Mid-Infrared Spectral Range

Semiconductors (Woodbury, N.Y.), 2005, Vol.39 (11), p.1235

Danilova, T. N.

2005

Volltextzugriff (PDF)

InAsSb/InAsSbP current-tunable laser with narrow spectral line width

Applied physics. B, Lasers and optics, 2003, Vol.76 (6), p.633-637

2003

Volltextzugriff (PDF)

1 – 25 von 418

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(357)
Mit Volltextzugriff
(343)

Publikationsform

Sprache

Englisch
(395)
Russisch
(32)
Japanisch
(14)
Deutsch
(1)

Erscheinungsjahr

n.n

Thema

Science & Technology
(309)
Physical Sciences
(231)
Physics
(178)
Technology
(102)
Physics, Applied
(68)
Physics, Condensed Matter
(65)
Engineering
(38)
Materials Science
(35)
Chemistry
(34)
Life Sciences & Biomedicine
(33)
Exact Sciences And Technology
(28)
Materials Science, Multidisciplinary
(25)
Optics
(22)
Physics, Multidisciplinary
(21)
Engineering, Electrical & Electronic
(20)
Instruments & Instrumentation
(20)
Physics, Particles & Fields
(17)
Nuclear Science & Technology
(16)
Physics, Nuclear
(16)
Humans
(15)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(2)

Menü

Weitere Dienste

Einstellungen

InAsSb/InAsSbP current-tunable laser with narrow spectral line width

Increasing the emission power of LEDs (λ = 1.7–2.4 μm) by changing the light direction in the GaSb/GaInAsSb/GaAlAsSb heterostructure

Room-temperature photoluminescence of Ga0.96In0.04 As0.11Sb0.89 lattice matched to InAs

Electrical Characteristics and Temperature Dependence of Photovoltaic Parameters of GaInAsSb Based TPV Diode

Powerful mid-infrared light emitting diodes for pollution monitoring

Powerful InAsSbP/InAsSb light emitting diodes grown by MOVPE

Electrical Properties of GaInAsSb/GaSb/GaAlAsSb Double Heterostructure with Low Diameter

Interface-induced optical and transport phenomena in type II broken-gap single heterojunctions

Diode laser spectroscopy using two modes of an InAsSb/InAsSbP laser near 3.6 μm

Numerical analysis of the energy-band diagram of type-II p-GaInAsSb/p-InAs heterojunction and size-quantization levels at the interface

The Development of Nuclear Frequency Standard with the Use of Ion Crystals Manipulation System

Two-dimensional semimetal channel in a type II broken-gap GaInAsSb/InAs single heterojunction

Electroluminescence and lasing in type II Ga(Al)Sb/InGaAsSb heterostructures in the spectral range 3–5 μm

Anisotropic polarization of radiation in quantum-confinement whispering-gallery-mode lasers

High-power mid-infrared light emitting diodes grown by MOVPE

Room-Temperature Photoluminescence of Ga^sub 0.96^In^sub 0.04^As^sub 0.11^Sb^sub 0.89^ Lattice Matched to InAs

Room-temperature photoluminescence of Ga0.96In0.04As0.11Sb0.89 lattice matched to InAs

DX center in AlGaAsSb:Te and a mechanism of its ionization

Improvement of the stability of the tractor within the units with front mounting

Room-temperature photoluminescence of Ga0.96In0.04 As0.11Sb0.89 lattice matched to InAs

Liquid-phase epitaxial growth of GaSb-related compounds on sulphide treated (100) GaSb substrates

Room-temperature electroluminescence of AlSb∕InAsSb single quantum wells grown by metal organic vapor phase epitaxy

A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy

Light-Emitting Diodes Based on GaSb Alloys for the 1.6–4.4 μm Mid-Infrared Spectral Range

InAsSb/InAsSbP current-tunable laser with narrow spectral line width

Suchergebnisse filtern