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Use of negative capacitance to simulate the electrical characteristics in double-gate ferroelectric field-effect transistors

Current Applied Physics, 2012, 12(6), , pp.1591-1595

2012

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Effect of Young's modulus on DEM results regarding transverse mixing of particles within a rotating drum

Powder technology, 2017-08, Vol.318, p.507-517

2017

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Numerical investigation on angle of repose and force network from granular pile in variable gravitational environments

Powder technology, 2015-10, Vol.283, p.607-617

2015

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Crystal structure, magnetic and electrical-transport properties of rare-earth-doped Sr2FeMoO6

Physica. B, Condensed matter, 2006-05, Vol.381 (1-2), p.233-238

2006

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Genetic Gains in Grain Yield and Physiological Traits of Winter Wheat in Shandong Province, China, from 1969 to 2006

Crop science, 2012, Vol.52 (1), p.44-56

2012

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Impact of the radiation effect on the energy storage density and wake-up behaviors of antiferroelectric-like Al-doped HfO2 thin films

Physical chemistry chemical physics : PCCP, 2020-01, Vol.22 (38), p.21893-21899

2020

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Frequency response and modeling of resonant-cavity separate absorption, charge, and multiplication avalanche photodiodes

Journal of lightwave technology, 2001-07, Vol.19 (7), p.1010-1022

2001

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Temperature dependent studies of InP/InGaAs avalanche photodiodes based on time domain modeling

IEEE transactions on electron devices, 2001-04, Vol.48 (4), p.661-670

2001

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Resistive switching behavior of La-doped ZnO films for nonvolatile memory applications

Solid-state electronics, 2011-09, Vol.63 (1), p.100-104

2011

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Eu doping effects on structural and magnetic properties of (Sr2-xEux)FeMoO6 compounds

Journal of solid state chemistry, 2010-10, Vol.183 (10), p.2432-2437

2010

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Eu doping effects on structural and magnetic properties of (Sr{sub 2-x}Eu{sub x})FeMoO{sub 6} compounds

Journal of solid state chemistry, 2010-10, Vol.183 (10)

2010

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A Model of Ferroelectric Field-Effect Transistor after Ionizing Radiation

Materials science forum, 2014-04, Vol.787, p.247-255

2014

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Effects of applied bias voltage in tunnel junctions with ferroelectric barrier

Solid-state electronics, 2012-02, Vol.68, p.8-12

2012

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Microstructure, magnetoelectric properties and leakage mechanisms of La0.7Ca0.3MnO3/Bi3.15Nd0.85TiO3 composite thin films

Solid state sciences, 2013-03, Vol.17, p.35-39

2013

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Eu doping effects on structural and magnetic properties of (Sr 2− x Eu x )FeMoO 6 compounds

Journal of solid state chemistry, 2010, Vol.183 (10), p.2432-2437

2010

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Use of negative capacitance to simulate the electrical characteristics in double-gate ferroelectric field-effect transistors

Current applied physics, 2012-11, p.1591-1595

2012

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Factors for the polarization lifetime in metal–ferroelectric–insulator–semiconductor capacitors

Solid-state electronics, 2012-07, Vol.73, p.84-88

2012

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Modeling of polarization effects in InGaN PIN solar cells

Optical and quantum electronics, 2011-10, Vol.42 (11-13), p.699-703

2011

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Subsolidus phase relations of the Cu–Ga–N system

Journal of alloys and compounds, 2007-07, Vol.438 (1), p.158-164

2007

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Two-dimensional simulation of GaInP/GaAs/Ge triple junction solar cell

Physica status solidi. C, 2007-04, Vol.4 (5), p.1637-1640

2007

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Spin-reorientation transitions in RFe 11Mo (R=rare earth and Y) intermetallic compounds

Journal of magnetism and magnetic materials, 2007, Vol.313 (1), p.107-110

2007

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Crystal and magnetic structures of Laves phase compound NdCo2 in the temperature range between 9 and 300K

Journal of alloys and compounds, 2006-08, Vol.420 (1-2), p.29-33

2006

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Hole doping effects in (Sr2-xNax)FeMoO6 double perovskite

Applied physics. A, Materials science & processing, 2006-09, Vol.84 (4), p.459-463

2006

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Phase relations of the Ag–Ga–N system

Journal of alloys and compounds, 2007-02, Vol.429 (1), p.184-191

2007

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The electronic conduction mechanism in magnesium-doped Ba0.4Sr0.6TiO3 thin films for varactor application

Solid state communications, 2009-05, Vol.149 (19-20), p.806-809

2009

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Use of negative capacitance to simulate the electrical characteristics in double-gate ferroelectric field-effect transistors

Effect of Young's modulus on DEM results regarding transverse mixing of particles within a rotating drum

Numerical investigation on angle of repose and force network from granular pile in variable gravitational environments

Crystal structure, magnetic and electrical-transport properties of rare-earth-doped Sr2FeMoO6

Genetic Gains in Grain Yield and Physiological Traits of Winter Wheat in Shandong Province, China, from 1969 to 2006

Impact of the radiation effect on the energy storage density and wake-up behaviors of antiferroelectric-like Al-doped HfO2 thin films

Frequency response and modeling of resonant-cavity separate absorption, charge, and multiplication avalanche photodiodes

Temperature dependent studies of InP/InGaAs avalanche photodiodes based on time domain modeling

Resistive switching behavior of La-doped ZnO films for nonvolatile memory applications

Eu doping effects on structural and magnetic properties of (Sr2-xEux)FeMoO6 compounds

Eu doping effects on structural and magnetic properties of (Sr{sub 2-x}Eu{sub x})FeMoO{sub 6} compounds

A Model of Ferroelectric Field-Effect Transistor after Ionizing Radiation

Effects of applied bias voltage in tunnel junctions with ferroelectric barrier

Microstructure, magnetoelectric properties and leakage mechanisms of La0.7Ca0.3MnO3/Bi3.15Nd0.85TiO3 composite thin films

Eu doping effects on structural and magnetic properties of (Sr 2− x Eu x )FeMoO 6 compounds

Use of negative capacitance to simulate the electrical characteristics in double-gate ferroelectric field-effect transistors

Factors for the polarization lifetime in metal–ferroelectric–insulator–semiconductor capacitors

Modeling of polarization effects in InGaN PIN solar cells

Subsolidus phase relations of the Cu–Ga–N system

Two-dimensional simulation of GaInP/GaAs/Ge triple junction solar cell

Spin-reorientation transitions in RFe 11Mo (R=rare earth and Y) intermetallic compounds

Crystal and magnetic structures of Laves phase compound NdCo2 in the temperature range between 9 and 300K

Hole doping effects in (Sr2-xNax)FeMoO6 double perovskite

Phase relations of the Ag–Ga–N system

The electronic conduction mechanism in magnesium-doped Ba0.4Sr0.6TiO3 thin films for varactor application

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