UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 289

Sortiert nach

Efficient hierarchical mixed Pd/SnO2 porous architecture deposited microheater for low power ethanol gas sensor

Sensors and actuators. B, Chemical, 2018-02, Vol.255, p.2002-2010

2018

Link zum Volltext

Verfügbarkeit prüfen

β-Ga2O3 hetero-junction barrier Schottky diode with reverse leakage current modulation and BV2/Ron,sp value of 0.93 GW/cm2

Applied physics letters, 2021-03, Vol.118 (12)

2021

Link zum Volltext

Verfügbarkeit prüfen

Mechanism of low Ohmic contact resistance to p-type GaN by suppressed edge dislocations

Applied physics letters, 2022-05, Vol.120 (22)

2022

Link zum Volltext

Verfügbarkeit prüfen

A High-Performance Gate Engineered InGaN Dopingless Tunnel FET

IEEE transactions on electron devices, 2018-03, Vol.65 (3), p.1223-1229

2018

Link zum Volltext
IEEE_Xplore

Interface state analysis of Schottky-gated p-AlGaN/u-GaN/AlGaN p-FET with negligible hysteresis at high temperatures

Applied physics letters, 2023-09, Vol.123 (13)

2023

Link zum Volltext

Verfügbarkeit prüfen

High-Performance AlGaN Double Channel HEMTs with Improved Drain Current Density and High Breakdown Voltage

Nanoscale research letters, 2020-05, Vol.15 (1), p.114-114, Article 114

2020

Link zum Volltext

Verfügbarkeit prüfen

Diamond Field Effect Transistors With MoO3 Gate Dielectric

IEEE electron device letters, 2017-06, Vol.38 (6), p.786-789

2017

Link zum Volltext
IEEE_Xplore

An energy-band modulated p-GaN/InGaN/AlN p-channel MESFET with high ION/IOFF ratio and steep subthreshold swing

Applied physics letters, 2024-04, Vol.124 (16)

2024

Link zum Volltext

Verfügbarkeit prüfen

High performance InGaN double channel high electron mobility transistors with strong coupling effect between the channels

Applied physics letters, 2018-12, Vol.113 (23)

2018

Link zum Volltext

Verfügbarkeit prüfen

Asymmetric quantum-well structures for AlGaN/GaN/AlGaN resonant tunneling diodes

Journal of applied physics, 2016-04, Vol.119 (16)

2016

Link zum Volltext

Verfügbarkeit prüfen

High-performance high electron mobility transistors with GaN/InGaN composite channel and superlattice back barrier

Applied physics letters, 2019-08, Vol.115 (7)

2019

Link zum Volltext

Verfügbarkeit prüfen

Proton-irradiation-induced degradation in GaN-based UV LEDs: Role of unintentionally doped carbon

Applied physics letters, 2023-04, Vol.122 (14)

2023

Link zum Volltext

Verfügbarkeit prüfen

Yellow Luminescence of Polar and Nonpolar GaN Nanowires on r‑Plane Sapphire by Metal Organic Chemical Vapor Deposition

Nano letters, 2013-08, Vol.13 (8), p.3654-3657

2013

Link zum Volltext

Verfügbarkeit prüfen

Epitaxy Single Crystal GaN on AlN Prepared by Plasma-enhanced Atomic Layer Deposition

Wu ji cai liao xue bao, 2024-05, Vol.39 (5), p.547

2024

Link zum Volltext

Verfügbarkeit prüfen

Improving the production of high-performance solar-blind β-Ga2O3 photodetectors by controlling the growth pressure

Journal of materials science, 2019-07, Vol.54 (14), p.10335-10345

2019

Link zum Volltext

Verfügbarkeit prüfen

Mechanism of current-collapse free for lateral GaN Schottky barrier diodes utilizing polarization-induced hole injection

Applied physics letters, 2022-06, Vol.120 (23)

2022

Link zum Volltext

Verfügbarkeit prüfen

Demonstration of Al0.85Ga0.15N Schottky barrier diode with > 3 kV breakdown voltage and the reverse leakage currents formation mechanism analysis

Applied physics letters, 2021-04, Vol.118 (17)

2021

Link zum Volltext

Verfügbarkeit prüfen

Evolutionary growth strategy of GaN on (1 1 1) diamond modulated by nano-patterned buffer engineering

Materials & design, 2023-11, Vol.235, p.112444, Article 112444

2023

Link zum Volltext

Verfügbarkeit prüfen

Current transport mechanism of AlGaN-channel Schottky barrier diode with extremely low leakage current and high blocking voltage of 2.55 kV

Applied physics letters, 2022-02, Vol.120 (9)

2022

Link zum Volltext

Verfügbarkeit prüfen

Study of the AlPN/GaN high electron mobility transistors with improved transconductance linearity

Applied physics letters, 2023-11, Vol.123 (20)

2023

Link zum Volltext

Verfügbarkeit prüfen

Cellulose Nanocrystals Induced Loose and Porous Graphite Phase Carbon Nitride/Porous Carbon Composites for Capturing and Determining of Organochlorine Pesticides from Water and Fruit Juice by Solid-Phase Microextraction

Polymers, 2023-05, Vol.15 (9), p.2218

2023

Link zum Volltext

Verfügbarkeit prüfen

Greatly Enhanced Wall-Plug Efficiency of N-polar AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

IEEE photonics journal, 2021-06, Vol.13 (3), p.1-11

2021

Link zum Volltext

Verfügbarkeit prüfen

β-Ga2O3 epitaxial growth on Fe-GaN template by non-vacuum mist CVD and its application in Schottky barrier diodes

AIP advances, 2021-07, Vol.11 (7), p.075312-075312-5

2021

Link zum Volltext

Verfügbarkeit prüfen

High-performance Acetone Soluble Tape Transfer Printing Method for Heterogeneous Integration

Scientific reports, 2019-10, Vol.9 (1), p.15769-7, Article 15769

2019

Link zum Volltext

Verfügbarkeit prüfen

High Efficiency Deep Ultraviolet Light-Emitting Diodes With Polarity Inversion of Hole Injection Layer

IEEE photonics journal, 2023-04, Vol.15 (2), p.1-5

2023

Link zum Volltext

Verfügbarkeit prüfen

1 – 25 von 289

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(273)
Mit Volltextzugriff
(284)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(222)
Physical Sciences
(160)
Technology
(103)
Physics
(76)
Materials Science
(64)
Physics, Applied
(59)
Materials Science, Multidisciplinary
(58)
Engineering
(48)
Gallium Nitrides
(44)
Life Sciences & Biomedicine
(41)
Geology
(40)
Geosciences, Multidisciplinary
(40)
Chemistry
(39)
Engineering, Electrical & Electronic
(30)
China
(29)
Physical Geography
(29)
Substrates
(29)
Geography, Physical
(28)
Pollen
(26)
Environmental Sciences
(25)

15 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

5 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

Menü

Weitere Dienste

Einstellungen

Efficient hierarchical mixed Pd/SnO2 porous architecture deposited microheater for low power ethanol gas sensor

β-Ga2O3 hetero-junction barrier Schottky diode with reverse leakage current modulation and BV2/Ron,sp value of 0.93 GW/cm2

Mechanism of low Ohmic contact resistance to p-type GaN by suppressed edge dislocations

A High-Performance Gate Engineered InGaN Dopingless Tunnel FET

Interface state analysis of Schottky-gated p-AlGaN/u-GaN/AlGaN p-FET with negligible hysteresis at high temperatures

High-Performance AlGaN Double Channel HEMTs with Improved Drain Current Density and High Breakdown Voltage

Diamond Field Effect Transistors With MoO3 Gate Dielectric

An energy-band modulated p-GaN/InGaN/AlN p-channel MESFET with high ION/IOFF ratio and steep subthreshold swing

High performance InGaN double channel high electron mobility transistors with strong coupling effect between the channels

Asymmetric quantum-well structures for AlGaN/GaN/AlGaN resonant tunneling diodes

High-performance high electron mobility transistors with GaN/InGaN composite channel and superlattice back barrier

Proton-irradiation-induced degradation in GaN-based UV LEDs: Role of unintentionally doped carbon

Yellow Luminescence of Polar and Nonpolar GaN Nanowires on r‑Plane Sapphire by Metal Organic Chemical Vapor Deposition

Epitaxy Single Crystal GaN on AlN Prepared by Plasma-enhanced Atomic Layer Deposition

Improving the production of high-performance solar-blind β-Ga2O3 photodetectors by controlling the growth pressure

Mechanism of current-collapse free for lateral GaN Schottky barrier diodes utilizing polarization-induced hole injection

Demonstration of Al0.85Ga0.15N Schottky barrier diode with > 3 kV breakdown voltage and the reverse leakage currents formation mechanism analysis

Evolutionary growth strategy of GaN on (1 1 1) diamond modulated by nano-patterned buffer engineering

Current transport mechanism of AlGaN-channel Schottky barrier diode with extremely low leakage current and high blocking voltage of 2.55 kV

Study of the AlPN/GaN high electron mobility transistors with improved transconductance linearity

Cellulose Nanocrystals Induced Loose and Porous Graphite Phase Carbon Nitride/Porous Carbon Composites for Capturing and Determining of Organochlorine Pesticides from Water and Fruit Juice by Solid-Phase Microextraction

Greatly Enhanced Wall-Plug Efficiency of N-polar AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

β-Ga2O3 epitaxial growth on Fe-GaN template by non-vacuum mist CVD and its application in Schottky barrier diodes

High-performance Acetone Soluble Tape Transfer Printing Method for Heterogeneous Integration

High Efficiency Deep Ultraviolet Light-Emitting Diodes With Polarity Inversion of Hole Injection Layer

Suchergebnisse filtern