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Effect of δ-ferrite on the H-trapping behavior in the martensitic stainless steel

Journal of materials research and technology, 2024-01, Vol.28, p.2955-2961

2024

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Effects of alloyed Cr and Cu on the corrosion behavior of low-alloy steel in a simulated groundwater solution

Corrosion science, 2016-01, Vol.102, p.114-124

2016

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Characterization of corrosion products formed on different surfaces of steel exposed to simulated groundwater solution

Applied surface science, 2015-08, Vol.345, p.10-17

2015

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Design and Rate Control of Large Titanium Alloy Springs for Aerospace Applications

Aerospace, 2024-06, Vol.11 (7), p.514

2024

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Effects of anions on corrosion behaviour of carbon steel in simulated groundwater in China

Corrosion engineering, science, and technology, 2017-04, Vol.52 (1_suppl), p.84-89

2017

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Online monitoring system for metallic components in underground laboratory

Materials and corrosion, 2021-01, Vol.72 (1-2), p.396-404

2021

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Investigation on Corrosion Behavior of High-Level Waste Container Materials

Proceedings of the 8th Pacific Rim International Congress on Advanced Materials and Processing, p.167-179

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Study on the processing characteristics of SiC and sapphire substrates polished by semi-fixed and fixed abrasive tools

Tribology international, 2016-12, Vol.104, p.191-203

2016

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Removal mechanism of sapphire substrates (0001, 112¯0 and 101¯0) in mechanical planarization machining

Ceramics international, 2017-12, Vol.43 (18), p.16178-16184

2017

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Removal mechanism of 4H- and 6H-SiC substrates (0001 and 000 1 ¯ ) in mechanical planarization machining

Proceedings of the Institution of Mechanical Engineers. Part B, Journal of engineering manufacture, 2019-01, Vol.233 (1), p.69-76

2019

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Surface damage of single-crystal diamond (100) processed based on a sol-gel polishing tool

Diamond and related materials, 2018-03, Vol.83, p.46-53

2018

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Chemical reaction on silicon carbide wafer (0 0 0 1 and 0 0 0 −1) with water molecules in nanoscale polishing

Applied surface science, 2023-01, Vol.607, p.155090, Article 155090

2023

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Study on nanomechanical properties of 4H-SiC and 6H-SiC by molecular dynamics simulations

Ceramics international, 2019-12, Vol.45 (17), p.21998-22006

2019

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Study on removal mechanism of polycrystalline diamond wafer by grinding containing transition metals

Diamond and related materials, 2024-07, p.111366, Article 111366

2024

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Photocatalysis assisting the mechanical polishing of a single-crystal SiC wafer utilizing an anatase TiO2-coated diamond abrasive

Precision engineering, 2017-07, Vol.49, p.235-242

2017

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Effects of processing parameters and grinding direction on the material removal mechanism of (100) surface single crystal diamond in self-rotating mechanical grinding

Diamond and related materials, 2024-01, Vol.141, p.110685, Article 110685

2024

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Precision Polishing of Single Crystal Diamond (111) Substrates Using a Sol-Gel (SG) Polishing Pad

IEEE transactions on semiconductor manufacturing, 2019-08, Vol.32 (3), p.341-345

2019

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Corrigendum to “Removal mechanism of sapphire substrates (0001, 11[formula omitted]0 and 10[formula omitted]0) in mechanical planarization machining” [Ceramics Int. 43 (2017) 16178–16184]

Ceramics international, 2019-12, Vol.45 (17), p.22442-22442

2019

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Photocatalysis assisting the mechanical polishing of a single-crystal SiC wafer utilizing an anatase TiO 2 -coated diamond abrasive

Precision engineering, 2017-07, Vol.49, p.235-242

2017

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Effect of δ-ferrite on the H-trapping behavior in the martensitic stainless steel

Effects of alloyed Cr and Cu on the corrosion behavior of low-alloy steel in a simulated groundwater solution

Characterization of corrosion products formed on different surfaces of steel exposed to simulated groundwater solution

Design and Rate Control of Large Titanium Alloy Springs for Aerospace Applications

Effects of anions on corrosion behaviour of carbon steel in simulated groundwater in China

Online monitoring system for metallic components in underground laboratory

Investigation on Corrosion Behavior of High-Level Waste Container Materials

Study on the processing characteristics of SiC and sapphire substrates polished by semi-fixed and fixed abrasive tools

Removal mechanism of sapphire substrates (0001, 112¯0 and 101¯0) in mechanical planarization machining

Removal mechanism of 4H- and 6H-SiC substrates (0001 and 000 1 ¯ ) in mechanical planarization machining

Surface damage of single-crystal diamond (100) processed based on a sol-gel polishing tool

Chemical reaction on silicon carbide wafer (0 0 0 1 and 0 0 0 −1) with water molecules in nanoscale polishing

Study on nanomechanical properties of 4H-SiC and 6H-SiC by molecular dynamics simulations

Study on removal mechanism of polycrystalline diamond wafer by grinding containing transition metals

Photocatalysis assisting the mechanical polishing of a single-crystal SiC wafer utilizing an anatase TiO2-coated diamond abrasive

Effects of processing parameters and grinding direction on the material removal mechanism of (100) surface single crystal diamond in self-rotating mechanical grinding

Precision Polishing of Single Crystal Diamond (111) Substrates Using a Sol-Gel (SG) Polishing Pad

Corrigendum to “Removal mechanism of sapphire substrates (0001, 11[formula omitted]0 and 10[formula omitted]0) in mechanical planarization machining” [Ceramics Int. 43 (2017) 16178–16184]

Photocatalysis assisting the mechanical polishing of a single-crystal SiC wafer utilizing an anatase TiO 2 -coated diamond abrasive

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