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Graphene/GaN diodes for ultraviolet and visible photodetectors

Applied physics letters, 2014-08, Vol.105 (7)

2014

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Flow structure and rock-breaking feature of the self-rotating nozzle for radial jet drilling

Petroleum science, 2020-02, Vol.17 (1), p.211-221

2020

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Hydrophobic lipophilic modified cotton fabric for oil absorption applications

Journal of natural fibers, 2020-01, Vol.17 (1), p.146-154

2020

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Generation and characterization of two novel low phytate mutations in soybean (Glycine max L. Merr.)

Theoretical and applied genetics, 2007-11, Vol.115 (7), p.945-957

2007

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Preparation of Phase Change Material on Polyester/Cotton Blend

IOP conference series. Materials Science and Engineering, 2018-09, Vol.414 (1), p.12024

2018

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Epitaxial evolution on buried cracks in a strain-controlled AlN/GaN superlattice interlayer between AlGaN/GaN multiple quantum wells and a GaN template

Chinese physics B, 2014-10, Vol.23 (10), p.106106-1-106106-5

2014

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Epitaxy of an Al-Droplet-Free AlN Layer with Step-Flow Features by Molecular Beam Epitaxy

Chinese physics letters, 2011-06, Vol.28 (6), p.068102

2011

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Thermal stability of tungsten and tungsten nitride Schottky contacts to AlGaN/GaN

Chinese physics B, 2011-06, Vol.20 (6), p.403-406

刘芳秦志新许福军赵胜康香宁沈波张国义

2011

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Cause Analysis and Countermeasures of Low-Production and Low-Efficiency Pumping Wells in Y Oilfield

Proceedings of the International Field Exploration and Development Conference 2022, p.3491-3502

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Effects of Dislocation on High Temperature Transport Characteristics of Unintentionally Doped GaN

Chinese physics letters, 2007-06, Vol.24 (6), p.1682-1685

2007

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Comparision between Ga- and N-polarity InGaN solar cells with gradient-In-composition intrinsic layers

Chinese physics B, 2016-10, Vol.25 (10), p.549-553

鲁麟李明潮吕琛高文根江明许福军陈其工

2016

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Zero-field spin splitting in AlxGa1−xN/GaN heterostructures with various Al compositions

Applied physics letters, 2008-10, Vol.93 (17)

2008

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Surface states of InAlN film grown by MOCVD

Wuli xuebao, 2013-09, Vol.62 (17), p.177302

2013

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High-mobility group box 1 expression and lymph node metastasis in intrahepatic cholangiocarcinoma

World journal of gastroenterology : WJG, 2015-03, Vol.21 (11), p.3256-3265

2015

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Effects of Two Low Phytic Acid Mutations on Seed Quality and Nutritional Traits in Soybean (Glycine max L. Merr)

Journal of agricultural and food chemistry, 2009-05, Vol.57 (9), p.3632-3638

2009

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Sensing Property of Carbon Nanotube Yarn Embedded in Ethylene Vinyl Acetate (EVA) Elastomer

东华大学学报（英文版）, 2016-08, Vol.33 (4), p.610-613

2016

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Thermal annealing behaviour of Al/Ni/Au multilayer on n-GaN Schottky contacts

Chinese physics B, 2009-04, Vol.18 (4), p.1618-1621

2009

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Exchange Enhancement of Spin-Splitting in AlxGa1−xN/GaN Heterostructures in Tilted Magnetic Fields

Chinese physics letters, 2011-03, Vol.28, p.037103

2011

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Different temperature dependence of carrier transport properties between AlxGa1–xN/InyGa1–yN/GaN and AlxGa1–xN/GaN heterostructures

Chinese physics B, 2011-05, Vol.20, p.057305

2011

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Effect of hydrogenation on the luminescence evolution of GaN under low energy electron beam irradiation

Wuli xuebao, 2009-11, Vol.58 (11), p.7864

2009

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Identification and elimination of inductively coupled plasma-induced defects in AlxGa1-xN/GaN heterostructures

Chinese physics B, 2011-07, Vol.20 (7), p.393-398

林芳沈波卢励吾刘新宇魏珂许福军王彦马楠黄俊

2011

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The leakage current mechanisms in the Schottky diode with a thin Al layer insertion between Al0.245Ga0.755N/GaN heterostructure and Ni/Au Schottky contact

Chinese physics B, 2009-04, Vol.18, p.1614

2009

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Scattering behaviour of a two-dimensional electron gas induced by Al composition fluctuation in AlxGa1 − xN barriers in AlxGa1−xN/GaN heterostructures

Chinese physics B, 2009-05, Vol.18, p.2002

2009

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Performance comparison of Pt/Au and Ni/Au Schottky contacts on AlxGa1-x N/GaN heterostructures at high temperatures

Chinese physics B, 2010-12, Vol.19 (12), p.478-483

林芳沈波卢励吾马楠许福军苗振林宋杰刘新宇魏珂黄俊

2010

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Improving Performance of Algan‐Based Deep‐Ultraviolet Light‐Emitting Diodes by Inserting a Higher Al‐Content Algan Layer Within the Multiple Quantum Wells

Physica status solidi. A, Applications and materials science, 2017-11, Vol.214 (11), p.n/a

2017

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Graphene/GaN diodes for ultraviolet and visible photodetectors

Flow structure and rock-breaking feature of the self-rotating nozzle for radial jet drilling

Hydrophobic lipophilic modified cotton fabric for oil absorption applications

Generation and characterization of two novel low phytate mutations in soybean (Glycine max L. Merr.)

Preparation of Phase Change Material on Polyester/Cotton Blend

Epitaxial evolution on buried cracks in a strain-controlled AlN/GaN superlattice interlayer between AlGaN/GaN multiple quantum wells and a GaN template

Epitaxy of an Al-Droplet-Free AlN Layer with Step-Flow Features by Molecular Beam Epitaxy

Thermal stability of tungsten and tungsten nitride Schottky contacts to AlGaN/GaN

Cause Analysis and Countermeasures of Low-Production and Low-Efficiency Pumping Wells in Y Oilfield

Effects of Dislocation on High Temperature Transport Characteristics of Unintentionally Doped GaN

Comparision between Ga- and N-polarity InGaN solar cells with gradient-In-composition intrinsic layers

Zero-field spin splitting in AlxGa1−xN/GaN heterostructures with various Al compositions

Surface states of InAlN film grown by MOCVD

High-mobility group box 1 expression and lymph node metastasis in intrahepatic cholangiocarcinoma

Effects of Two Low Phytic Acid Mutations on Seed Quality and Nutritional Traits in Soybean (Glycine max L. Merr)

Sensing Property of Carbon Nanotube Yarn Embedded in Ethylene Vinyl Acetate (EVA) Elastomer

Thermal annealing behaviour of Al/Ni/Au multilayer on n-GaN Schottky contacts

Exchange Enhancement of Spin-Splitting in AlxGa1−xN/GaN Heterostructures in Tilted Magnetic Fields

Different temperature dependence of carrier transport properties between AlxGa1–xN/InyGa1–yN/GaN and AlxGa1–xN/GaN heterostructures

Effect of hydrogenation on the luminescence evolution of GaN under low energy electron beam irradiation

Identification and elimination of inductively coupled plasma-induced defects in AlxGa1-xN/GaN heterostructures

The leakage current mechanisms in the Schottky diode with a thin Al layer insertion between Al0.245Ga0.755N/GaN heterostructure and Ni/Au Schottky contact

Scattering behaviour of a two-dimensional electron gas induced by Al composition fluctuation in AlxGa1 − xN barriers in AlxGa1−xN/GaN heterostructures

Performance comparison of Pt/Au and Ni/Au Schottky contacts on AlxGa1-x N/GaN heterostructures at high temperatures

Improving Performance of Algan‐Based Deep‐Ultraviolet Light‐Emitting Diodes by Inserting a Higher Al‐Content Algan Layer Within the Multiple Quantum Wells

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