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Improved Performance of MoS2 Negative-Capacitance Field-Effect Transistors by Optimizing Gate-Stack of Al-Doped HfO2/Al2O3

IEEE transactions on electron devices, 2023-02, Vol.70 (2), p.782-788

2023

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Penicopeptide A (PPA) from the deep-sea-derived fungus promotes osteoblast-mediated bone formation and alleviates ovariectomy-induced bone loss by activating the AKT/GSK-3β/β-catenin signaling pathway

Pharmacological research, 2023-11, Vol.197, p.106968-106968, Article 106968

2023

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Recent advances in CRISPR-based genome editing technology and its applications in cardiovascular research

Military medical research, 2023-03, Vol.10 (1), p.12-12, Article 12

2023

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Improved Interfacial and Electrical Properties of MoS2 Transistor With High/Low-Temperature Grown Hf0.5Al0.5O as Top-Gate Dielectric

IEEE electron device letters, 2020-03, Vol.41 (3), p.385-388

2020

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Electrical and Interfacial Properties of GaAs MOS Capacitors With La-Doped ZrON as Interfacial Passivation Layer

IEEE transactions on electron devices, 2017-05, Vol.64 (5), p.2179-2184

2017

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Improved Interfacial and Electrical Properties of GaAs MOS Capacitor With LaON/TiON Multilayer Composite Gate Dielectric and LaON as Interfacial Passivation Layer

IEEE transactions on electron devices, 2017-04, Vol.64 (4), p.1535-1540

2017

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Improvements of Interfacial and Electrical Properties for Ge MOS Capacitor by Using TaYON Interfacial Passivation Layer and Fluorine Incorporation

IEEE transactions on electron devices, 2017-09, Vol.64 (9), p.3528-3533

2017

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Association between Serum Uric Acid and Hypertension in a Large Cross-Section Study in a Chinese Population

Journal of cardiovascular development and disease, 2022-10, Vol.9 (10), p.346

2022

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Impact of Nitrogen Incorporation on the Interface Between Ge and La2O3 or Y2O3 Gate Dielectric: A Study on the Formation of Germanate

IEEE transactions on electron devices, 2016-12, Vol.63 (12), p.4888-4892

2016

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Improved interfacial and electrical properties of HfLaON gate dielectric Ge MOS capacitor by NbON/Si dual passivation layer and fluorine incorporation

Applied physics letters, 2016-11, Vol.109 (19)

2016

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Spontaneous emission of a two-level system near the interface of topological insulators

Europhysics letters, 2014-03, Vol.105 (6), p.64001-64001

2014

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Improved interfacial and electrical properties of Ge MOS capacitor with ZrON/TaON multilayer composite gate dielectric by using fluorinated Si passivation layer

Applied physics letters, 2017-07, Vol.111 (5)

2017

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Effectively Suppressed Short-Channel Effects in Small-Size MoS2 Transistors by Introducing Negative-Capacitance Effect Resulted From Ferroelectric HfZrO2 Film

IEEE transactions on electron devices, 2024-02, Vol.71 (2), p.1185-1190

2024

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Fabrication of High-Gain CMOS Inverter Based on Ambipolar WSe2 Negative-Capacitance FETs With Ferroelectric HfZrAlO as Gate Dielectric

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.2203-2209

2024

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N2-Plasma-Treated Ga2O3(Gd2O3) as Interface Passivation Layer for Ge MOS Capacitor With HfTiON Gate Dielectric

IEEE transactions on electron devices, 2016-07, Vol.63 (7), p.2838-2843

2016

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Dynamic modulated single-photon routing

Chinese physics B, 2023-12, Vol.32 (12), p.124203

2023

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Electrical Properties of HfTiON Gate-Dielectric GaAs Metal-Oxide-Semiconductor Capacitor With AlON as Interlayer

IEEE transactions on electron devices, 2014-03, Vol.61 (3), p.742-746

2014

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Improved Interfacial and Electrical Properties of Ge-Based Metal-Oxide-Semiconductor Capacitor With LaTaON Passivation Layer

IEEE transactions on electron devices, 2014-11, Vol.61 (11), p.3608-3612

2014

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Preparation of squeezed light with low average photon number based on dynamic Casimir effect

Chinese physics B, 2023-12, Vol.32 (12), p.120301

2023

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MoS2transistors gated by ferroelectric HfZrO2with MoS2/mica heterojunction interface

Nanotechnology, 2021-12, Vol.32 (49)

2021

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Impacts of HfZrO thickness and anneal temperature on performance of MoS2negative-capacitance field-effect transistors

Nanotechnology, 2021-10, Vol.32 (44)

2021

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Top-Gated MoS₂ Negative-Capacitance Transistors Fabricated by an Integral-Transfer of Pulsed Laser Deposited HfZrO₂ on Mica

IEEE transactions on electron devices, 2022-06, Vol.69 (6), p.3477-3482

2022

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Influence of Si-Substrate Concentration on Electrical Properties of Back- and Top-Gate MoS₂ Transistors

IEEE transactions on electron devices, 2021-06, Vol.68 (6), p.3087-3090

2021

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Plasma-Nitrided Ga2O3(Gd2O3) as Interfacial Passivation Layer for InGaAs Metal-Oxide- Semiconductor Capacitor With HfTiON Gate Dielectric

IEEE transactions on electron devices, 2015-04, Vol.62 (4), p.1235-1240

2015

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Lipid accumulation properties of Chlorella vulgaris and Scenedesmus obliquus in membrane photobioreactor (MPBR) fed with secondary effluent from municipal wastewater treatment plant

Renewable energy, 2019-06, Vol.136, p.671-676

2019

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Improved Performance of MoS2 Negative-Capacitance Field-Effect Transistors by Optimizing Gate-Stack of Al-Doped HfO2/Al2O3

Penicopeptide A (PPA) from the deep-sea-derived fungus promotes osteoblast-mediated bone formation and alleviates ovariectomy-induced bone loss by activating the AKT/GSK-3β/β-catenin signaling pathway

Recent advances in CRISPR-based genome editing technology and its applications in cardiovascular research

Improved Interfacial and Electrical Properties of MoS2 Transistor With High/Low-Temperature Grown Hf0.5Al0.5O as Top-Gate Dielectric

Electrical and Interfacial Properties of GaAs MOS Capacitors With La-Doped ZrON as Interfacial Passivation Layer

Improved Interfacial and Electrical Properties of GaAs MOS Capacitor With LaON/TiON Multilayer Composite Gate Dielectric and LaON as Interfacial Passivation Layer

Improvements of Interfacial and Electrical Properties for Ge MOS Capacitor by Using TaYON Interfacial Passivation Layer and Fluorine Incorporation

Association between Serum Uric Acid and Hypertension in a Large Cross-Section Study in a Chinese Population

Impact of Nitrogen Incorporation on the Interface Between Ge and La2O3 or Y2O3 Gate Dielectric: A Study on the Formation of Germanate

Improved interfacial and electrical properties of HfLaON gate dielectric Ge MOS capacitor by NbON/Si dual passivation layer and fluorine incorporation

Spontaneous emission of a two-level system near the interface of topological insulators

Improved interfacial and electrical properties of Ge MOS capacitor with ZrON/TaON multilayer composite gate dielectric by using fluorinated Si passivation layer

Effectively Suppressed Short-Channel Effects in Small-Size MoS2 Transistors by Introducing Negative-Capacitance Effect Resulted From Ferroelectric HfZrO2 Film

Fabrication of High-Gain CMOS Inverter Based on Ambipolar WSe2 Negative-Capacitance FETs With Ferroelectric HfZrAlO as Gate Dielectric

N2-Plasma-Treated Ga2O3(Gd2O3) as Interface Passivation Layer for Ge MOS Capacitor With HfTiON Gate Dielectric

Dynamic modulated single-photon routing

Electrical Properties of HfTiON Gate-Dielectric GaAs Metal-Oxide-Semiconductor Capacitor With AlON as Interlayer

Improved Interfacial and Electrical Properties of Ge-Based Metal-Oxide-Semiconductor Capacitor With LaTaON Passivation Layer

Preparation of squeezed light with low average photon number based on dynamic Casimir effect

MoS2transistors gated by ferroelectric HfZrO2with MoS2/mica heterojunction interface

Impacts of HfZrO thickness and anneal temperature on performance of MoS2negative-capacitance field-effect transistors

Top-Gated MoS₂ Negative-Capacitance Transistors Fabricated by an Integral-Transfer of Pulsed Laser Deposited HfZrO₂ on Mica

Influence of Si-Substrate Concentration on Electrical Properties of Back- and Top-Gate MoS₂ Transistors

Plasma-Nitrided Ga2O3(Gd2O3) as Interfacial Passivation Layer for InGaAs Metal-Oxide- Semiconductor Capacitor With HfTiON Gate Dielectric

Lipid accumulation properties of Chlorella vulgaris and Scenedesmus obliquus in membrane photobioreactor (MPBR) fed with secondary effluent from municipal wastewater treatment plant

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