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Large‐Scale N‐Type FET and Homogeneous CMOS Inverter Array Based on Few‐Layer MoTe2

Advanced electronic materials, 2023-10, Vol.9 (10), p.n/a

2023

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Low-power-consumption CMOS inverter array based on CVD-grown p-MoTe2 and n-MoS2

iScience, 2021-12, Vol.24 (12), p.103491-103491, Article 103491

2021

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Radiation-Resistant CsPbBr3 Nanoplate-Based Lasers

ACS applied nano materials, 2020-12, Vol.3 (12), p.12017-12024

2020

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Control of Luminescence in Eu2+-Doped Orthosilicate-Orthophosphate Phosphors by Chainlike Polyhedra and Electronic Structures

Inorganic chemistry, 2018-01, Vol.57 (2), p.609-616

2018

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Odd-Even Layer-Number Effect and Layer-Dependent Magnetic Phase Diagrams in MnBi2Te4

Physical review. X, 2021-01, Vol.11 (1)

2021

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P/N-Type Conversion of 2D MoTe2 Controlled by Top Gate Engineering for Logic Circuits

ACS applied materials & interfaces, 2024-07, Vol.16 (28), p.36539-36546

2024

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P/N-Type Conversion of 2D MoTe 2 Controlled by Top Gate Engineering for Logic Circuits

ACS applied materials & interfaces, 2024-07, Vol.16 (28), p.36539-36546

2024

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Atomic‐Precision Repair of a Few‐Layer 2H‐MoTe2 Thin Film by Phase Transition and Recrystallization Induced by a Heterophase Interface

Advanced materials (Weinheim), 2020-06, Vol.32 (23), p.e2000236-n/a

2020

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Nanoscale Channel Length MoS 2 Vertical Field-Effect Transistor Arrays with Side-Wall Source/Drain Electrodes

ACS applied materials & interfaces, 2024-04, Vol.16 (13), p.16544-16552

2024

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Nanoscale Channel Length MoS2 Vertical Field-Effect Transistor Arrays with Side-Wall Source/Drain Electrodes

ACS applied materials & interfaces, 2024-04, Vol.16 (13), p.16544-16552

2024

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High‐Performance CMOS Inverter Array with Monolithic 3D Architecture Based on CVD‐Grown n‐MoS2 and p‐MoTe2

Small (Weinheim an der Bergstrasse, Germany), 2023-05, Vol.19 (19), p.e2207927-n/a

2023

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High-Performance CMOS Inverter Array with Monolithic 3D Architecture Based on CVD-Grown n-MoS 2 and p-MoTe 2

Small (Weinheim an der Bergstrasse, Germany), 2023-05, Vol.19 (19), p.e2207927

2023

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Large‐Scale Vertically Interconnected Complementary Field‐Effect Transistors Based on Thermal Evaporation

Small (Weinheim an der Bergstrasse, Germany), 2024-06, Vol.20 (24), p.e2309953-n/a

2024

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Consequence of Optimal Bonding on Disordered Structure and Improved Luminescence Properties in T‑Phase (Ba,Ca)2SiO4:Eu2+ Phosphor

Inorganic chemistry, 2018-04, Vol.57 (7), p.4146-4154

2018

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Consequence of Optimal Bonding on Disordered Structure and Improved Luminescence Properties in T-Phase (Ba,Ca) 2 SiO 4 :Eu 2+ Phosphor

Inorganic chemistry, 2018-04, Vol.57 (7), p.4146-4154

2018

Volltextzugriff (PDF)

Control of Luminescence in Eu 2+ -Doped Orthosilicate-Orthophosphate Phosphors by Chainlike Polyhedra and Electronic Structures

Inorganic chemistry, 2018-01, Vol.57 (2), p.609-616

2018

Volltextzugriff (PDF)

Large‐Scale p ‐Type Nonvolatile FGFET Memory Array Based on 2H‐MoTe 2

Advanced electronic materials, 2024-08

2024

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Optical Helicity and Polarization Dependent NIR Negative Photocurrent in the 2D Magnetic Semiconductor CrI3

Advanced optical materials, 2024-01, Vol.12 (3), p.n/a

2024

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Atomic-Precision Repair of a Few-Layer 2H-MoTe 2 Thin Film by Phase Transition and Recrystallization Induced by a Heterophase Interface

Advanced materials (Weinheim), 2020-06, Vol.32 (23), p.e2000236

2020

Volltextzugriff (PDF)

Optical Helicity and Polarization Dependent NIR Negative Photocurrent in the 2D Magnetic Semiconductor CrI 3

Advanced optical materials, 2024-01, Vol.12 (3)

2024

Volltextzugriff (PDF)

Large‐Scale N‐Type FET and Homogeneous CMOS Inverter Array Based on Few‐Layer MoTe 2

Advanced electronic materials, 2023-10, Vol.9 (10)

2023

Volltextzugriff (PDF)

Low-power-consumption CMOS inverter array based on CVD-grown p -MoTe 2 and n -MoS 2

iScience, 2021-12, Vol.24 (12), p.103491

2021

Volltextzugriff (PDF)

Odd-Even Layer-Number Effect and Layer-Dependent Magnetic Phase Diagrams in MnBi 2 Te 4

Physical review. X, 2021-01, Vol.11 (1), Article 011003

2021

Volltextzugriff (PDF)

Odd-Even Layer-Number Effect and Layer-Dependent Magnetic Phase Diagrams in MnBi_{2}Te_{4}

Physical review. X, 2021-01, Vol.11 (1), p.011003

2021

Volltextzugriff (PDF)

Radiation-Resistant CsPbBr 3 Nanoplate-Based Lasers

ACS applied nano materials, 2020-12, Vol.3 (12), p.12017-12024

2020

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Large‐Scale N‐Type FET and Homogeneous CMOS Inverter Array Based on Few‐Layer MoTe2

Low-power-consumption CMOS inverter array based on CVD-grown p-MoTe2 and n-MoS2

Radiation-Resistant CsPbBr3 Nanoplate-Based Lasers

Control of Luminescence in Eu2+-Doped Orthosilicate-Orthophosphate Phosphors by Chainlike Polyhedra and Electronic Structures

Odd-Even Layer-Number Effect and Layer-Dependent Magnetic Phase Diagrams in MnBi2Te4

P/N-Type Conversion of 2D MoTe2 Controlled by Top Gate Engineering for Logic Circuits

P/N-Type Conversion of 2D MoTe 2 Controlled by Top Gate Engineering for Logic Circuits

Atomic‐Precision Repair of a Few‐Layer 2H‐MoTe2 Thin Film by Phase Transition and Recrystallization Induced by a Heterophase Interface

Nanoscale Channel Length MoS 2 Vertical Field-Effect Transistor Arrays with Side-Wall Source/Drain Electrodes

Nanoscale Channel Length MoS2 Vertical Field-Effect Transistor Arrays with Side-Wall Source/Drain Electrodes

High‐Performance CMOS Inverter Array with Monolithic 3D Architecture Based on CVD‐Grown n‐MoS2 and p‐MoTe2

High-Performance CMOS Inverter Array with Monolithic 3D Architecture Based on CVD-Grown n-MoS 2 and p-MoTe 2

Large‐Scale Vertically Interconnected Complementary Field‐Effect Transistors Based on Thermal Evaporation

Consequence of Optimal Bonding on Disordered Structure and Improved Luminescence Properties in T‑Phase (Ba,Ca)2SiO4:Eu2+ Phosphor

Consequence of Optimal Bonding on Disordered Structure and Improved Luminescence Properties in T-Phase (Ba,Ca) 2 SiO 4 :Eu 2+ Phosphor

Control of Luminescence in Eu 2+ -Doped Orthosilicate-Orthophosphate Phosphors by Chainlike Polyhedra and Electronic Structures

Large‐Scale p ‐Type Nonvolatile FGFET Memory Array Based on 2H‐MoTe 2

Optical Helicity and Polarization Dependent NIR Negative Photocurrent in the 2D Magnetic Semiconductor CrI3

Atomic-Precision Repair of a Few-Layer 2H-MoTe 2 Thin Film by Phase Transition and Recrystallization Induced by a Heterophase Interface

Optical Helicity and Polarization Dependent NIR Negative Photocurrent in the 2D Magnetic Semiconductor CrI 3

Large‐Scale N‐Type FET and Homogeneous CMOS Inverter Array Based on Few‐Layer MoTe 2

Low-power-consumption CMOS inverter array based on CVD-grown p -MoTe 2 and n -MoS 2

Odd-Even Layer-Number Effect and Layer-Dependent Magnetic Phase Diagrams in MnBi 2 Te 4

Odd-Even Layer-Number Effect and Layer-Dependent Magnetic Phase Diagrams in MnBi_{2}Te_{4}

Radiation-Resistant CsPbBr 3 Nanoplate-Based Lasers

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