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A 300-V Ultra-Low-Specific On-Resistance High-Side p-LDMOS With Auto-Biased n-LDMOS for SPIC

IEEE transactions on power electronics, 2017-01, Vol.32 (1), p.551-560

2017

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A Vertical Power MOSFET With an Interdigitated Drift Region Using High- k Insulator

IEEE transactions on electron devices, 2012-09, Vol.59 (9), p.2430-2437

2012

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A New Solution for Superjunction Lateral Double Diffused MOSFET by Using Deep Drain Diffusion and Field Plates

IEEE electron device letters, 2015-06, Vol.36 (6), p.588-590

2015

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Vertical Power Hk-MOSFET of Hexagonal Layout

IEEE transactions on electron devices, 2013-05, Vol.60 (5), p.1709-1715

2013

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An Ultralow Specific ON-Resistance LDMOST Using Charge Balance by Split p-Gate and n-Drift Regions

IEEE transactions on electron devices, 2013-11, Vol.60 (11), p.3821-3826

2013

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Optimization of Specific On-Resistance of Balanced Symmetric Superjunction MOSFETs Based on a Better Approximation of Ionization Integral

IEEE transactions on electron devices, 2012-10, Vol.59 (10), p.2742-2747

2012

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An Investigation of a Novel Snapback-Free Reverse-Conducting IGBT and With Dual Gates

IEEE transactions on electron devices, 2012-11, Vol.59 (11), p.3048-3053

2012

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A Low On-State Voltage and Saturation Current TIGBT With Self-Biased pMOS

IEEE electron device letters, 2016-11, Vol.37 (11), p.1470-1472

2016

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Optimization of Specific on-Resistance of Semisuperjunction Trench MOSFETs with Charge Balance

IEEE transactions on electron devices, 2013-03, Vol.60 (3), p.1195-1201

2013

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Design of a Double-Gate Power LDMOS With Improved SOA by Complementary Majority Carrier Conduction Paths

IEEE transactions on power electronics, 2016-07, Vol.31 (7), p.5133-5140

2016

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Analysis and Fabrication of an LDMOS With High-Permittivity Dielectric

IEEE electron device letters, 2011-09, Vol.32 (9), p.1266-1268

2011

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A Practical Approach to Enhance Yield of OPTVLD Products

IEEE electron device letters, 2013-02, Vol.34 (2), p.289-291

2013

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A Novel Isolation Method for Half-Bridge Power ICs

IEEE transactions on electron devices, 2013-07, Vol.60 (7), p.2318-2323

2013

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A 600-V Super-Junction pLDMOS Utilizing Electron Current to Enhance Current Capability

IEEE transactions on electron devices, 2019-05, Vol.66 (5), p.2314-2320

2019

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Snapback-free reverse-conducting IGBT with low turnoff loss

Electronics letters, 2014-04, Vol.50 (9), p.703-705

2014

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A High-Speed Deep-Trench MOSFET With a Self-Biased Split Gate

IEEE transactions on electron devices, 2010-08, Vol.57 (8), p.1972-1977

2010

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An Ultra-Low Specific ON-Resistance LDMOST With Self-Driven Split Gate

IEEE transactions on electron devices, 2015-04, Vol.62 (4), p.1230-1234

2015

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Study on Dual Channel n-p-LDMOS Power Devices With Three Terminals

IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3508-3514

2013

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Vertical Power k-MOSFET of Hexagonal Layout

IEEE transactions on electron devices, 2013-05, Vol.60 (5), p.1709-1715

2013

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A novel SCR-LDMOS for high voltage ESD protection

2015 IEEE 11th International Conference on ASIC (ASICON), 2015, p.1-4

2015

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A superjunction structure using high-k insulator for power devices：theory and optimization

Journal of semiconductors, 2016-06, Vol.37 (6), p.116-121

黄铭敏陈星弼

2016

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Deep trench junction termination employing variable-K dielectric for high voltage devices

2015 IEEE 11th International Conference on ASIC (ASICON), 2015, p.1-4

2015

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A novel snapback-free reverse conducting IGBT with anti-parallel Shockley diode

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2013, p.261-264

2013

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A novel diode-clamped CSTBT with ultra-low on-state voltage and saturation current

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016, p.307-310

2016

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Theoretical calculation of the p-emitter length for snapback-free reverse-conducting IGBT

Journal of semiconductors, 2014-06, Vol.35 (6), p.62-66

朱利恒陈星弼

2014

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A 300-V Ultra-Low-Specific On-Resistance High-Side p-LDMOS With Auto-Biased n-LDMOS for SPIC

A Vertical Power MOSFET With an Interdigitated Drift Region Using High- k Insulator

A New Solution for Superjunction Lateral Double Diffused MOSFET by Using Deep Drain Diffusion and Field Plates

Vertical Power Hk-MOSFET of Hexagonal Layout

An Ultralow Specific ON-Resistance LDMOST Using Charge Balance by Split p-Gate and n-Drift Regions

Optimization of Specific On-Resistance of Balanced Symmetric Superjunction MOSFETs Based on a Better Approximation of Ionization Integral

An Investigation of a Novel Snapback-Free Reverse-Conducting IGBT and With Dual Gates

A Low On-State Voltage and Saturation Current TIGBT With Self-Biased pMOS

Optimization of Specific on-Resistance of Semisuperjunction Trench MOSFETs with Charge Balance

Design of a Double-Gate Power LDMOS With Improved SOA by Complementary Majority Carrier Conduction Paths

Analysis and Fabrication of an LDMOS With High-Permittivity Dielectric

A Practical Approach to Enhance Yield of OPTVLD Products

A Novel Isolation Method for Half-Bridge Power ICs

A 600-V Super-Junction pLDMOS Utilizing Electron Current to Enhance Current Capability

Snapback-free reverse-conducting IGBT with low turnoff loss

A High-Speed Deep-Trench MOSFET With a Self-Biased Split Gate

An Ultra-Low Specific ON-Resistance LDMOST With Self-Driven Split Gate

Study on Dual Channel n-p-LDMOS Power Devices With Three Terminals

Vertical Power k-MOSFET of Hexagonal Layout

A novel SCR-LDMOS for high voltage ESD protection

A superjunction structure using high-k insulator for power devices：theory and optimization

Deep trench junction termination employing variable-K dielectric for high voltage devices

A novel snapback-free reverse conducting IGBT with anti-parallel Shockley diode

A novel diode-clamped CSTBT with ultra-low on-state voltage and saturation current

Theoretical calculation of the p-emitter length for snapback-free reverse-conducting IGBT

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