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Single particle transport in two-dimensional heterojunction interlayer tunneling field effect transistor

Journal of applied physics, 2014-02, Vol.115 (7)

2014

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High-voltage field effect transistors with wide-bandgap β -Ga2O3 nanomembranes

Applied physics letters, 2014-05, Vol.104 (20)

2014

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Unique prospects for graphene-based terahertz modulators

Applied physics letters, 2011-09, Vol.99 (11), p.113104-113104-3

2011

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234 nm and 246 nm AlN-Delta-GaN quantum well deep ultraviolet light-emitting diodes

Applied physics letters, 2018-01, Vol.112 (1)

2018

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Extraordinary Control of Terahertz Beam Reflectance in Graphene Electro-absorption Modulators

Nano letters, 2012-09, Vol.12 (9), p.4518-4522

2012

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1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

IEEE electron device letters, 2015-04, Vol.36 (4), p.375-377

2015

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Dephasing by optical phonons in GaN defect single-photon emitters

Scientific reports, 2023-05, Vol.13 (1), p.8678-8678, Article 8678

2023

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GaN/AlN quantum-disk nanorod 280 nm deep ultraviolet light emitting diodes by molecular beam epitaxy

Optics letters, 2020-01, Vol.45 (1), p.121

2020

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Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures

Applied physics letters, 2014-01, Vol.104 (2)

2014

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Enhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodes

Optics express, 2020-02, Vol.28 (4), p.4489-4500

2020

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Studies of Intrinsic Hot Phonon Dynamics in Suspended Graphene by Transient Absorption Microscopy

Nano letters, 2011-08, Vol.11 (8), p.3184-3189

2011

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Efficient terahertz electro-absorption modulation employing graphene plasmonic structures

Applied physics letters, 2012-12, Vol.101 (26)

2012

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Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy

Applied physics letters, 2012-07, Vol.101 (2)

2012

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Dislocation and indium droplet related emission inhomogeneities in InGaN LEDs

Journal of physics. D, Applied physics, 2021-12, Vol.54 (49), p.495106

2021

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Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes

Applied physics letters, 2013-01, Vol.102 (4)

2013

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Two-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructure field-effect transistors on AlN

Applied physics letters, 2014-05, Vol.104 (19)

2014

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Strong effect of scandium source purity on chemical and electronic properties of epitaxial ScxAl1−xN/GaN heterostructures

APL materials, 2021-09, Vol.9 (9), p.091106-091106-9

2021

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Polarization-Sensitive Nanowire Photodetectors Based on Solution-Synthesized CdSe Quantum-Wire Solids

Nano letters, 2007-10, Vol.7 (10), p.2999-3006

2007

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Intrinsic electron mobility limits in β-Ga2O3

Applied physics letters, 2016-11, Vol.109 (21)

2016

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Comparative study of chemically synthesized and exfoliated multilayer MoS2 field-effect transistors

Applied physics letters, 2013-01, Vol.102 (4)

2013

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Room-Temperature Graphene-Nanoribbon Tunneling Field-Effect Transistors

NPJ 2D materials and applications, 2019-11, Vol.3 (1), Article 43

2019

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Exciton Dynamics in Suspended Monolayer and Few-Layer MoS2 2D Crystals

ACS nano, 2013-02, Vol.7 (2), p.1072-1080

2013

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A polarization-induced 2D hole gas in undoped gallium nitride quantum wells

Science (American Association for the Advancement of Science), 2019-09, Vol.365 (6460), p.1454-1457

2019

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High-quality InN films on GaN using graded InGaN buffers by MBE

Japanese Journal of Applied Physics, 2016-05, Vol.55 (5S), p.5

2016

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Thermal Conductivity of Monolayer Molybdenum Disulfide Obtained from Temperature-Dependent Raman Spectroscopy

ACS nano, 2014-01, Vol.8 (1), p.986-993

2014

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Single particle transport in two-dimensional heterojunction interlayer tunneling field effect transistor

High-voltage field effect transistors with wide-bandgap β -Ga2O3 nanomembranes

Unique prospects for graphene-based terahertz modulators

234 nm and 246 nm AlN-Delta-GaN quantum well deep ultraviolet light-emitting diodes

Extraordinary Control of Terahertz Beam Reflectance in Graphene Electro-absorption Modulators

1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

Dephasing by optical phonons in GaN defect single-photon emitters

GaN/AlN quantum-disk nanorod 280 nm deep ultraviolet light emitting diodes by molecular beam epitaxy

Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures

Enhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodes

Studies of Intrinsic Hot Phonon Dynamics in Suspended Graphene by Transient Absorption Microscopy

Efficient terahertz electro-absorption modulation employing graphene plasmonic structures

Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy

Dislocation and indium droplet related emission inhomogeneities in InGaN LEDs

Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes

Two-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructure field-effect transistors on AlN

Strong effect of scandium source purity on chemical and electronic properties of epitaxial ScxAl1−xN/GaN heterostructures

Polarization-Sensitive Nanowire Photodetectors Based on Solution-Synthesized CdSe Quantum-Wire Solids

Intrinsic electron mobility limits in β-Ga2O3

Comparative study of chemically synthesized and exfoliated multilayer MoS2 field-effect transistors

Room-Temperature Graphene-Nanoribbon Tunneling Field-Effect Transistors

Exciton Dynamics in Suspended Monolayer and Few-Layer MoS2 2D Crystals

A polarization-induced 2D hole gas in undoped gallium nitride quantum wells

High-quality InN films on GaN using graded InGaN buffers by MBE

Thermal Conductivity of Monolayer Molybdenum Disulfide Obtained from Temperature-Dependent Raman Spectroscopy

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