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Conduction mechanism of TiN/HfOx/Pt resistive switching memory: A trap-assisted-tunneling model

Applied physics letters, 2011-08, Vol.99 (6)

2011

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A SPICE Compact Model of Metal Oxide Resistive Switching Memory With Variations

IEEE electron device letters, 2012-10, Vol.33 (10), p.1405-1407

2012

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IEEE_Xplore

On the Switching Parameter Variation of Metal-Oxide RRAM-Part I: Physical Modeling and Simulation Methodology

IEEE transactions on electron devices, 2012-04, Vol.59 (4), p.1172-1182

2012

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IEEE_Xplore

On the Switching Parameter Variation of Metal Oxide RRAM-Part II: Model Corroboration and Device Design Strategy

IEEE transactions on electron devices, 2012-04, Vol.59 (4), p.1183-1188

2012

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IEEE_Xplore

Compact Model for Carbon Nanotube Field-Effect Transistors Including Nonidealities and Calibrated With Experimental Data Down to 9-nm Gate Length

IEEE transactions on electron devices, 2013-06, Vol.60 (6), p.1834-1843

2013

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IEEE_Xplore

Verilog-A compact model for oxide-based resistive random access memory (RRAM)

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2014, p.41-44

2014

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IEEE_Xplore

A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory

Applied physics letters, 2012-01, Vol.100 (4)

2012

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Modeling and simulation of uniaxial strain effects in armchair graphene nanoribbon tunneling field effect transistors

Applied physics letters, 2010-06, Vol.96 (25), p.252105-252105-3

2010

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Complex Band Structures: From Parabolic to Elliptic Approximation

IEEE electron device letters, 2011-09, Vol.32 (9), p.1296-1298

2011

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IEEE_Xplore

SOI FinFET nFET-to-pFET Tracking Variability Compact Modeling and Impact on Latch Timing

IEEE transactions on electron devices, 2015-06, Vol.62 (6), p.1760-1768

2015

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IEEE_Xplore

Molecular Dynamics Study of the Switching Mechanism of Carbon-Based Resistive Memory

IEEE transactions on electron devices, 2010-12, Vol.57 (12), p.3434-3441

2010

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IEEE_Xplore

Resistive switching random access memory - Materials, device, interconnects, and scaling considerations

2012 IEEE International Integrated Reliability Workshop Final Report, 2012, p.16-21

2012

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IEEE_Xplore

Dynamic Modeling and Atomistic Simulations of SET and RESET Operations in TiO2-Based Unipolar Resistive Memory

IEEE electron device letters, 2011-05, Vol.32 (5), p.677-679

2011

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Surviving Process Variation: Investigation of CNR MOSFETs With Tapered Channels Using Fully Self-Consistent NEGF and Tight-Binding Methods

IEEE electron device letters, 2008-07, Vol.29 (7), p.759-761

2008

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IEEE_Xplore

First-principles investigation on bonding formation and electronic structure of metal-graphene contacts

Applied physics letters, 2009-03, Vol.94 (10), p.103511-103511-3

2009

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On the stochastic nature of resistive switching in metal oxide RRAM: Physical modeling, monte carlo simulation, and experimental characterization

2011 International Electron Devices Meeting, 2011, p.17.3.1-17.3.4

2011

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IEEE_Xplore

Atomistic Approach to Thickness-Dependent Bandstructure Calculation of InSb UTB

IEEE transactions on nanotechnology, 2007-01, Vol.6 (1), p.101-105

2007

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IEEE_Xplore

P‐5: Compact Modeling of Independent Dual Gate TFTs and OLED for Display Panel Circuit Simulations

SID International Symposium Digest of technical papers, 2020-08, Vol.51 (1), p.1326-1329

2020

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A Monte Carlo study of the low resistance state retention of HfO x based resistive switching memory

Applied physics letters, 2012-01, Vol.100 (4), p.043507-043507-4

2012

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Analytical approximation of complex band structures for band-to-band tunneling models

2011 International Conference on Simulation of Semiconductor Processes and Devices, 2011, p.267-270

2011

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IEEE_Xplore

Tight-binding study of Γ-L bandstructure engineering for ballistic III-V nMOSFETs

2011 International Conference on Simulation of Semiconductor Processes and Devices, 2011, p.71-74

2011

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IEEE_Xplore

A direct solution method for carrier transport using Markov process representation

Journal of computational electronics, 2008-09, Vol.7 (3), p.248-251

2008

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Monte Carlo simulation of electron mobility in strained Si DG-FETs with TB bandstructure calculation

Journal of computational electronics, 2008-09, Vol.7 (3), p.192-196

2008

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Conduction mechanism of TiN/HfO x /Pt resistive switching memory: A trap-assisted-tunneling model

Applied physics letters, 2011-08, Vol.99 (6), p.063507-063507-3

2011

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Understanding metal oxide RRAM current overshoot and reliability using Kinetic Monte Carlo simulation

2012 International Electron Devices Meeting, 2012, p.26.1.1-26.1.4

2012

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IEEE_Xplore

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Conduction mechanism of TiN/HfOx/Pt resistive switching memory: A trap-assisted-tunneling model

A SPICE Compact Model of Metal Oxide Resistive Switching Memory With Variations

On the Switching Parameter Variation of Metal-Oxide RRAM-Part I: Physical Modeling and Simulation Methodology

On the Switching Parameter Variation of Metal Oxide RRAM-Part II: Model Corroboration and Device Design Strategy

Compact Model for Carbon Nanotube Field-Effect Transistors Including Nonidealities and Calibrated With Experimental Data Down to 9-nm Gate Length

Verilog-A compact model for oxide-based resistive random access memory (RRAM)

A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory

Modeling and simulation of uniaxial strain effects in armchair graphene nanoribbon tunneling field effect transistors

Complex Band Structures: From Parabolic to Elliptic Approximation

SOI FinFET nFET-to-pFET Tracking Variability Compact Modeling and Impact on Latch Timing

Molecular Dynamics Study of the Switching Mechanism of Carbon-Based Resistive Memory

Resistive switching random access memory - Materials, device, interconnects, and scaling considerations

Dynamic Modeling and Atomistic Simulations of SET and RESET Operations in TiO2-Based Unipolar Resistive Memory

Surviving Process Variation: Investigation of CNR MOSFETs With Tapered Channels Using Fully Self-Consistent NEGF and Tight-Binding Methods

First-principles investigation on bonding formation and electronic structure of metal-graphene contacts

On the stochastic nature of resistive switching in metal oxide RRAM: Physical modeling, monte carlo simulation, and experimental characterization

Atomistic Approach to Thickness-Dependent Bandstructure Calculation of InSb UTB

P‐5: Compact Modeling of Independent Dual Gate TFTs and OLED for Display Panel Circuit Simulations

A Monte Carlo study of the low resistance state retention of HfO x based resistive switching memory

Analytical approximation of complex band structures for band-to-band tunneling models

Tight-binding study of Γ-L bandstructure engineering for ballistic III-V nMOSFETs

A direct solution method for carrier transport using Markov process representation

Monte Carlo simulation of electron mobility in strained Si DG-FETs with TB bandstructure calculation

Conduction mechanism of TiN/HfO x /Pt resistive switching memory: A trap-assisted-tunneling model

Understanding metal oxide RRAM current overshoot and reliability using Kinetic Monte Carlo simulation

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