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Enzymatic synthesis of L-lactic acid from carbon dioxide and ethanol with an inherent cofactor regeneration cycle

Biotechnology and bioengineering, 2011-02, Vol.108 (2), p.465-469

2011

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Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD

Materials, 2021-09, Vol.14 (18), p.5339

2021

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Modified Gysel Power Divider for Dual-Band Applications

IEEE microwave and wireless components letters, 2011-01, Vol.21 (1), p.16-18

2011

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Enrichment of rare cancer cells through depletion of normal cells using density and flow-through, immunomagnetic cell separation

Experimental hematology, 2004-10, Vol.32 (10), p.891-904

2004

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Experimental and theoretical study on device-processing-incorporated fluorine in AlGaN/GaN heterostructures

AIP advances, 2020-06, Vol.10 (6), p.065122-065122-4

2020

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High voltage charge pump circuit using vertical parallel plate capacitors

2017 IEEE 12th International Conference on ASIC (ASICON), 2017, p.762-764

2017

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Co-evolutionary digital twins: A multidimensional dynamic approach to digital engineering

Advanced engineering informatics, 2024-08, Vol.61, p.102554, Article 102554

2024

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Low-Noise Amplifiers Using 100-nm Gate Length GaN-on-Silicon Process in W-Band

IEEE microwave and wireless components letters, 2020-10, Vol.30 (10), p.957-960

2020

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The Study of 0.34 THz Monolithically Integrated Fourth Subharmonic Mixer Using Planar Schottky Barrier Diode

Journal of infrared, millimeter and terahertz waves, 2015-11, Vol.36 (11), p.1112-1122

2015

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An 18-31-GHz GaN-Based LNA With 0.8-dB Minimum NF and High Robustness

IEEE microwave and wireless components letters, 2020-09, Vol.30 (9), p.1-4

2020

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Design of two-terminal PNPN diode for high-density and high-speed memory applications

Journal of semiconductors, 2014, Vol.35 (1), p.51-55

童小东吴昊粱擎擎钟会才朱慧珑赵超叶甜春

2014

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Mitigation of Reverse Short-Channel Effect With Multilayer TiN/Ti/TiN Metal Gates in Gate Last PMOSFETs

IEEE electron device letters, 2014-08, Vol.35 (8), p.811-813

2014

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Comparison of two immunomagnetic separation technologies to deplete T cells from human blood samples

Biotechnology and bioengineering, 2006-05, Vol.94 (1), p.66-80

2006

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On substrate dopant engineering for ET-SOI MOSFETs with UT-BOX

Journal of semiconductors, 2014-11, Vol.35 (11), p.64-69

吴昊许淼万光星朱慧珑赵利川童小东赵超陈大鹏叶甜春

2014

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Enzymic Thin Film Coatings for Bioactive Materials

Biotechnology progress, 2008-05, Vol.24 (3), p.714-719

2008

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Early stage degradation related to dislocation evolution in neutron irradiated AlGaN/GaN HEMTs

Applied physics letters, 2020-07, Vol.117 (2)

2020

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An 18-56-GHz Wideband GaN Low-Noise Amplifier With 2.2-4.4-dB Noise Figure

IEEE microwave and wireless components letters, 2020-12, Vol.30 (12), p.1153-1156

2020

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A 22-30-GHz GaN Low-Noise Amplifier With 0.4-1.1-dB Noise Figure

IEEE microwave and wireless components letters, 2019-02, Vol.29 (2), p.134-136

2019

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A 23‐31 GHz gallium nitride high‐robustness low‐noise amplifier with 1.1‐dB noise figure and 28‐dBm saturation output power

Microwave and optical technology letters, 2020-03, Vol.62 (3), p.1077-1081

2020

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23.5‐30 GHz gallium nitride on silicon power amplifier MMIC with 7.6‐12.4 W saturation output power

Microwave and optical technology letters, 2019-07, Vol.61 (7), p.1797-1801

2019

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Degradation of Ka-Band GaN LNA Under High-Input Power Stress: Experimental and Theoretical Insights

IEEE transactions on electron devices, 2019-12, Vol.66 (12), p.5091-5096

2019

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Robust GaN-Based LNAs With Active Epitaxial Current Limiters

IEEE microwave and wireless components letters, 2021-12, Vol.31 (12), p.1287-1290

2021

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A 23‐31GHz gallium nitride high‐robustness low‐noise amplifier with 1.1‐dB noise figure and 28‐dBm saturation output power

Microwave and optical technology letters, 2020-03, Vol.62 (3), p.1077-1081

2020

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23.5‐30GHz gallium nitride on silicon power amplifier MMIC with 7.6‐12.4 W saturation output power

Microwave and optical technology letters, 2019-07, Vol.61 (7), p.1797-1801

2019

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A vertically integrated capacitorless memory cell

Journal of semiconductors, 2013-08, Vol.34 (8), p.65-69

童小东吴昊赵利川王明钟汇才

2013

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Enzymatic synthesis of L-lactic acid from carbon dioxide and ethanol with an inherent cofactor regeneration cycle

Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD

Modified Gysel Power Divider for Dual-Band Applications

Enrichment of rare cancer cells through depletion of normal cells using density and flow-through, immunomagnetic cell separation

Experimental and theoretical study on device-processing-incorporated fluorine in AlGaN/GaN heterostructures

High voltage charge pump circuit using vertical parallel plate capacitors

Co-evolutionary digital twins: A multidimensional dynamic approach to digital engineering

Low-Noise Amplifiers Using 100-nm Gate Length GaN-on-Silicon Process in W-Band

The Study of 0.34 THz Monolithically Integrated Fourth Subharmonic Mixer Using Planar Schottky Barrier Diode

An 18-31-GHz GaN-Based LNA With 0.8-dB Minimum NF and High Robustness

Design of two-terminal PNPN diode for high-density and high-speed memory applications

Mitigation of Reverse Short-Channel Effect With Multilayer TiN/Ti/TiN Metal Gates in Gate Last PMOSFETs

Comparison of two immunomagnetic separation technologies to deplete T cells from human blood samples

On substrate dopant engineering for ET-SOI MOSFETs with UT-BOX

Enzymic Thin Film Coatings for Bioactive Materials

Early stage degradation related to dislocation evolution in neutron irradiated AlGaN/GaN HEMTs

An 18-56-GHz Wideband GaN Low-Noise Amplifier With 2.2-4.4-dB Noise Figure

A 22-30-GHz GaN Low-Noise Amplifier With 0.4-1.1-dB Noise Figure

A 23‐31 GHz gallium nitride high‐robustness low‐noise amplifier with 1.1‐dB noise figure and 28‐dBm saturation output power

23.5‐30 GHz gallium nitride on silicon power amplifier MMIC with 7.6‐12.4 W saturation output power

Degradation of Ka-Band GaN LNA Under High-Input Power Stress: Experimental and Theoretical Insights

Robust GaN-Based LNAs With Active Epitaxial Current Limiters

A 23‐31GHz gallium nitride high‐robustness low‐noise amplifier with 1.1‐dB noise figure and 28‐dBm saturation output power

23.5‐30GHz gallium nitride on silicon power amplifier MMIC with 7.6‐12.4 W saturation output power

A vertically integrated capacitorless memory cell

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