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Gapped topological kink states and topological corner states in honeycomb lattice

Science bulletin, 2020-04, Vol.65 (7), p.531-537

2020

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Current induced second-order nonlinear Hall effect in bulk WTe2

Applied physics letters, 2023-10, Vol.123 (16)

2023

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Anomalous spin current anisotropy in a noncollinear antiferromagnet

Nature communications, 2023-09, Vol.14 (1), p.5873-5873, Article 5873

2023

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Spin photovoltaic effect in antiferromagnetic materials: Mechanisms, symmetry constraints, and recent progress

APL materials, 2023-07, Vol.11 (7), p.070903-070903-15

2023

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Spin photogalvanic effect in two-dimensional collinear antiferromagnets

npj quantum materials, 2021-04, Vol.6 (1), p.1-6, Article 35

2021

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Two-Dimensional Metals for Piezoelectriclike Devices Based on Berry-Curvature Dipole

Physical review applied, 2020-04, Vol.13 (4), Article 044014

2020

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Non-synchronous bulk photovoltaic effect in two-dimensional interlayer-sliding ferroelectrics

npj computational materials, 2022-07, Vol.8 (1), p.1-8, Article 138

2022

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Magnus Hall Effect in Two-Dimensional Materials

Chinese physics letters, 2021-06, Vol.38 (5), p.57301-86

2021

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Thickness dependence of superconductivity in layered GeP5

Rare metals, 2024-03, Vol.43 (3), p.1323-1328

2024

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Classification of second harmonic generation effect in magnetically ordered materials

npj quantum materials, 2023-12, Vol.8 (1), p.62-9, Article 62

2023

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Néel Spin Currents in Antiferromagnets

Physical review letters, 2023-05, Vol.130 (21), p.216702-216702, Article 216702

2023

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Electrical detection of ferroelectriclike metals through the nonlinear Hall effect

Physical review. B, 2020-07, Vol.102 (2), p.1, Article 024109

2020

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Ni-Intercalation-Induced Topological Nodal Line States and Superconductivity in NiTe

Journal of physical chemistry. C, 2023-03, Vol.127 (8), p.4303-4309

2023

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Multifunctional two-dimensional semiconductors SnP3: universal mechanism of layer-dependent electronic phase transition

Journal of physics. Condensed matter, 2018-11, Vol.30 (47), p.475702-475702

2018

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Room-temperature third-order nonlinear Hall effect in Weyl semimetal TaIrTe4

National science review, 2022-12, Vol.9 (12), p.nwac020-nwac020

2022

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Growth and Characterization of Sulfur-doped GaSe Single Crystals

Wu ji cai liao xue bao, 2015-01, Vol.30 (8), p.887

2015

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Spin-neutral tunneling anomalous Hall effect

Physical review. B, 2022-11, Vol.106 (18), Article L180404

2022

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A Modified Vertical Bridgman Method for Growth of GaSe Single Crystal: A Modified Vertical Bridgman Method for Growth of GaSe Single Crystal

Wu ji cai liao xue bao, 2014, Vol.29 (5), p.557-560

2014

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Few-layer α-Sb2O3 molecular crystals as high-k van der Waals dielectrics: electronic decoupling and significant surface ionic behaviors

Journal of materials chemistry. C, Materials for optical and electronic devices, 2024-06, Vol.12 (24), p.8825-8836

2024

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First-principles study on linear and nonlinear optical properties of ZnGeP2

中国物理B：英文版, 2015-03 (3), p.185-188

肖瑞春吴海信倪友保王振友黄昌保程旭东

2015

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Optical fingerprints of two-dimensional interlayer-sliding multiferroic materials

Physical review. B, 2024-09, Vol.110 (12), Article 125413

2024

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Magnus Hall Effect in Two-Dimensional MaterialsSupported by the National Basic Research Program of China (Grant No. 2019YFA0308403), the National Natural Science Foundation of China (Grant Nos. 11822407, 11947212, 11704348, and NSFC20SC07), the China Postdoctoral Science Foundation (Grant No. 2018M640513), and the Hong Kong Research Grants Council (Grant Nos. 26302118, 16305019, and N HKUST626/18)

Chinese physics letters, 2021-06, Vol.38 (5)

2021

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Extraordinary Magnetic Second Harmonic Generation in Monolayer CrPS 4

Advanced optical materials, 2024-08

2024

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Multifunctional two-dimensional semiconductors SnP 3 : universal mechanism of layer-dependent electronic phase transition

Journal of physics. Condensed matter, 2018-11, Vol.30 (47), p.475702

2018

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Prediction of giant tunneling magnetoresistance in Ru O 2 / Ti O 2 / Ru O 2 (110) antiferromagnetic tunnel junctions

Physical review. B, 2023-11, Vol.108 (17), Article 174439

2023

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Gapped topological kink states and topological corner states in honeycomb lattice

Current induced second-order nonlinear Hall effect in bulk WTe2

Anomalous spin current anisotropy in a noncollinear antiferromagnet

Spin photovoltaic effect in antiferromagnetic materials: Mechanisms, symmetry constraints, and recent progress

Spin photogalvanic effect in two-dimensional collinear antiferromagnets

Two-Dimensional Metals for Piezoelectriclike Devices Based on Berry-Curvature Dipole

Non-synchronous bulk photovoltaic effect in two-dimensional interlayer-sliding ferroelectrics

Magnus Hall Effect in Two-Dimensional Materials

Thickness dependence of superconductivity in layered GeP5

Classification of second harmonic generation effect in magnetically ordered materials

Néel Spin Currents in Antiferromagnets

Electrical detection of ferroelectriclike metals through the nonlinear Hall effect

Ni-Intercalation-Induced Topological Nodal Line States and Superconductivity in NiTe

Multifunctional two-dimensional semiconductors SnP3: universal mechanism of layer-dependent electronic phase transition

Room-temperature third-order nonlinear Hall effect in Weyl semimetal TaIrTe4

Growth and Characterization of Sulfur-doped GaSe Single Crystals

Spin-neutral tunneling anomalous Hall effect

A Modified Vertical Bridgman Method for Growth of GaSe Single Crystal: A Modified Vertical Bridgman Method for Growth of GaSe Single Crystal

Few-layer α-Sb2O3 molecular crystals as high-k van der Waals dielectrics: electronic decoupling and significant surface ionic behaviors

First-principles study on linear and nonlinear optical properties of ZnGeP2

Optical fingerprints of two-dimensional interlayer-sliding multiferroic materials

Extraordinary Magnetic Second Harmonic Generation in Monolayer CrPS 4

Multifunctional two-dimensional semiconductors SnP 3 : universal mechanism of layer-dependent electronic phase transition

Prediction of giant tunneling magnetoresistance in Ru O 2 / Ti O 2 / Ru O 2 (110) antiferromagnetic tunnel junctions

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