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Color tunable Ca8ZnM(PO4)7 (M = Lu/Tb, Lu/Eu, Tb/Eu) phosphors: luminescence, energy transfer and thermal stability studies for n-UV white LEDs

Dalton transactions : an international journal of inorganic chemistry, 2021-08, Vol.50 (32), p.11123-11129

2021

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Study of Phosphor Thermal-Isolated Packaging Technologies for High-Power White Light-Emitting Diodes

IEEE photonics technology letters, 2007-08, Vol.19 (15), p.1121-1123

2007

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Thermal Study of High-Power Nitride-Based Flip-Chip Light-Emitting Diodes

IEEE transactions on electron devices, 2008-12, Vol.55 (12), p.3375-3382

2008

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Effects of growth pressure on the properties of p-GaN layers

Journal of crystal growth, 2011-06, Vol.325 (1), p.32-35

2011

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Effect of periodic Si-delta-doping on the evolution of yellow luminescence and stress in n-type GaN epilayers

Journal of crystal growth, 2014-02, Vol.387, p.52-56

2014

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Influence of the TEGa flow on the optical and structural properties of InGaN/GaN multiple quantum wells grown by MOCVD

Journal of crystal growth, 2011, Vol.314 (1), p.202-206

2011

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Role of InGaN Insertion Layer on Nitride-Based Light-Emitting Diodes

Japanese Journal of Applied Physics, 2012-07, Vol.51 (7), p.072101-072101-6

2012

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Performance Improvement of Nitride-Based Light-Emitting Diode With a Thin Mg-Delta-Doped Hole Injection Layer

Journal of display technology, 2013-04, Vol.9 (4), p.255-259

2013

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Role of InGaN Insertion Layer on Nitride-Based Light-Emitting Diodes

Japanese Journal of Applied Physics, 2012-07, Vol.51 (7R), p.72101

2012

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Influence of V/III Ratio of Low Temperature Grown AlN Interlayer on the Growth of GaN on Si Substrate

Japanese Journal of Applied Physics, 2011-10, Vol.50 (10R), p.105501

2011

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Color tunable Ca 8 ZnM(PO 4 ) 7 (M = Lu/Tb, Lu/Eu, Tb/Eu) phosphors: luminescence, energy transfer and thermal stability studies for n-UV white LEDs

Dalton transactions : an international journal of inorganic chemistry, 2021-08, Vol.50 (32), p.11123-11129

2021

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High Quality GaN Grown on Si(111) Using Fast Coalescence Growth

Japanese Journal of Applied Physics, 2011-12, Vol.50 (12), p.121001-121001-3

2011

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Cation sites modification enhanced luminescence and thermal quenching characteristic in the blue light-emitting Na3Sc2-xZnx(PO4)3:0.03Eu2+ phosphors

Journal of luminescence, 2020-12, Vol.228, p.117615, Article 117615

2020

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Influence of V/III Ratio of Low Temperature Grown AlN Interlayer on the Growth of GaN on Si Substrate

Japanese Journal of Applied Physics, 2011-10, Vol.50 (10R), p.105501

2011

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Contrary luminescence behaviors of InGaN/GaN light emitting diodes caused by carrier tunneling leakage

Journal of applied physics, 2011-09, Vol.110 (6), p.064511-064511-6

2011

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Emission enhancement in GaN-based light emitting diodes with shallow triangular quantum wells

Applied physics letters, 2012-07, Vol.101 (4), p.41116

2012

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Enhanced electrostatic discharge properties of nitride-based light-emitting diodes with inserting Si-delta-doped layers

Applied physics letters, 2011-09, Vol.99 (11), p.111109-111109-3

2011

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Analysis and modeling of the experimentally observed anomalous mobility properties of periodically Si-delta-doped GaN layers

Applied physics letters, 2012-05, Vol.100 (21), p.212102-212102-4

2012

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Color tunable CaZnM(PO) (M = Lu/Tb, Lu/Eu, Tb/Eu) phosphors: luminescence, energy transfer and thermal stability studies for n-UV white LEDs

Dalton transactions : an international journal of inorganic chemistry, 2021-08, Vol.5 (32), p.11123-11129

2021

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High Quality GaN Grown on Si(111) Using Fast Coalescence Growth

Japanese Journal of Applied Physics, 2011-12, Vol.50 (12R), p.121001

2011

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Influence of V/III Ratio of Low Temperature Grown AlN Interlayer on the Growth of GaN on Si$\langle 111\rangle$ Substrate

Jpn J Appl Phys, 2011-10, Vol.50 (10), p.105501-105501-4

2011

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High temperature micromechanical behavior of Ti2AlN particle reinforced TiAl based composites investigated by in-situ high-energy X-ray diffraction

Materials & design, 2021-12, Vol.212, p.110225, Article 110225

2021

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Deep Learning-Based Channel Prediction for LEO Satellite Massive MIMO Communication System

IEEE wireless communications letters, 2021-08, Vol.10 (8), p.1835-1839

2021

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High temperature micro-deformation behavior of continuous TiNb fiber reinforced TiAl matrix composite investigated by in-situ high-energy X-ray diffraction

Materials science & engineering. A, Structural materials : properties, microstructure and processing, 2022-06, Vol.846, p.143255, Article 143255

2022

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Influence of optical axis pointing error on optical pose measurement accuracy

Ying yong guang xue, 2023, Vol.44 (2), p.365-370

2023

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Color tunable Ca8ZnM(PO4)7 (M = Lu/Tb, Lu/Eu, Tb/Eu) phosphors: luminescence, energy transfer and thermal stability studies for n-UV white LEDs

Study of Phosphor Thermal-Isolated Packaging Technologies for High-Power White Light-Emitting Diodes

Thermal Study of High-Power Nitride-Based Flip-Chip Light-Emitting Diodes

Effects of growth pressure on the properties of p-GaN layers

Effect of periodic Si-delta-doping on the evolution of yellow luminescence and stress in n-type GaN epilayers

Influence of the TEGa flow on the optical and structural properties of InGaN/GaN multiple quantum wells grown by MOCVD

Role of InGaN Insertion Layer on Nitride-Based Light-Emitting Diodes

Performance Improvement of Nitride-Based Light-Emitting Diode With a Thin Mg-Delta-Doped Hole Injection Layer

Role of InGaN Insertion Layer on Nitride-Based Light-Emitting Diodes

Influence of V/III Ratio of Low Temperature Grown AlN Interlayer on the Growth of GaN on Si Substrate

Color tunable Ca 8 ZnM(PO 4 ) 7 (M = Lu/Tb, Lu/Eu, Tb/Eu) phosphors: luminescence, energy transfer and thermal stability studies for n-UV white LEDs

High Quality GaN Grown on Si(111) Using Fast Coalescence Growth

Cation sites modification enhanced luminescence and thermal quenching characteristic in the blue light-emitting Na3Sc2-xZnx(PO4)3:0.03Eu2+ phosphors

Influence of V/III Ratio of Low Temperature Grown AlN Interlayer on the Growth of GaN on Si Substrate

Contrary luminescence behaviors of InGaN/GaN light emitting diodes caused by carrier tunneling leakage

Emission enhancement in GaN-based light emitting diodes with shallow triangular quantum wells

Enhanced electrostatic discharge properties of nitride-based light-emitting diodes with inserting Si-delta-doped layers

Analysis and modeling of the experimentally observed anomalous mobility properties of periodically Si-delta-doped GaN layers

Color tunable CaZnM(PO) (M = Lu/Tb, Lu/Eu, Tb/Eu) phosphors: luminescence, energy transfer and thermal stability studies for n-UV white LEDs

High Quality GaN Grown on Si(111) Using Fast Coalescence Growth

Influence of V/III Ratio of Low Temperature Grown AlN Interlayer on the Growth of GaN on Si$\langle 111\rangle$ Substrate

High temperature micromechanical behavior of Ti2AlN particle reinforced TiAl based composites investigated by in-situ high-energy X-ray diffraction

Deep Learning-Based Channel Prediction for LEO Satellite Massive MIMO Communication System

High temperature micro-deformation behavior of continuous TiNb fiber reinforced TiAl matrix composite investigated by in-situ high-energy X-ray diffraction

Influence of optical axis pointing error on optical pose measurement accuracy

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