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ZnO nanowire optoelectronic synapse for neuromorphic computing

Nanotechnology, 2022-02, Vol.33 (6), p.65205

2022

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Synaptic functions and a memristive mechanism on Pt/AlOx/HfOx/TiN bilayer-structure memristors

Journal of physics. D, Applied physics, 2020-01, Vol.53 (3)

2020

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Preparation and Characterization of Relaxor Ferroelectric 0.65Pb(Mg1/3Nb2/3)O3-0.35PbTiO3 by a Polymerizable Complex Method

Journal of the American Ceramic Society, 2009-06, Vol.92 (6), p.1256-1261

2009

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Towards an all-in fiber photodetector by directly bonding few-layer molybdenum disulfide to a fiber facet

Nanoscale, 2017-03, Vol.9 (10), p.3424-3428

2017

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Impact of Au Nanocrystal Size and Inter-Nanocrystal Distance on the Storage Characteristics of Memory Devices

Chinese physics letters, 2013-12, Vol.30 (12), p.128102-1-128102-4

2013

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A Charge-Trap Memory Device with a Composition-Modulated Zr-Silicate High-k Dielectric Multilayer Structure

Chinese physics letters, 2010-06, Vol.27 (6), p.254-257, Article 068502

2010

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Fabrication and characterization of La-doped HfO 2 gate dielectrics by metal-organic chemical vapor deposition

Applied surface science, 2010-02, Vol.256 (8), p.2496-2499

2010

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Theoretical Study of Carrier Mobility in Two-Dimensional Tetragonal Carbon Allotrope from Porous Graphene

Chinese physics letters, 2016-08, Vol.33 (8), p.38-40

高松向晖徐波夏奕东殷江刘治国

2016

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Bipolar resistance switching in the fully transparent BaSnO 3 -based memory device

Chinese physics B, 2014-08, Vol.23 (8), p.87304

2014

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Bipolar resistance switching in the fully transparent BaSnO3-based memory device

中国物理B：英文版, 2014-08 (8), p.481-486

Zhang Ting Yin Jiang Zhao Gao-Feng Zhang Wei-Feng Xia Yi-Dong Liu Zhi-Guo

2014

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TixSb2Te Thin Films for Phase Change Memory Applications

中国物理快报：英文版, 2014-07 (7), p.222-225

唐时宇李润欧欣许含霓夏奕东殷江刘治国

2014

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Fabrication and electrical characteristics of ultrathin (HfO 2) x (SiO 2) 1− x films by surface sol–gel method and reaction-anneal treatment

Microelectronic engineering, 2010-11, Vol.87 (9), p.1756-1759

2010

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The Distinguished Charge-Trapping Capability of the Memory Device with Al2O3-Cu2O Composite as the Charge Storage Layer

中国物理快报：英文版, 2014-02 (2), p.146-148

陆建新欧欣蓝学新曹正义刘晓杰卢伟龚昌杰徐波李爱东夏奕东殷江刘治国

2014

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Strontium-modified lead zirconate titanate thin films for electrically tunable device applications

Journal of applied physics, 2006-08, Vol.100 (3), p.036102-036102-3

2006

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Synaptic functions and a memristive mechanism on Pt/AlO x /HfO x /TiN bilayer-structure memristors

Journal of physics. D, Applied physics, 2020-01, Vol.53 (3), p.35302

2020

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Systemic Therapy after Radiotherapy Significantly Reduces the Risk of Mortality of Patients with 1-3 Brain Metastases： A Retrospective Study of 250 Patients

Chinese medical journal, 2017-12, Vol.130 (24), p.2916-2921

2017

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Fatigue study of SrBi2Ta2O9 thin films processed in forming gas

Sensors and actuators. A, Physical, 2002-04, Vol.99 (1-2), p.213-215

2002

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Towards an all-in fiber photodetector by directly bonding few-layer molybdenum disulfide to a fiber facetElectronic supplementary information (ESI) available. See DOI: 10.1039/c6nr08436b

2017-03

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Theoretical Study of Carrier Mobility in Two-Dimensional Tetragonal Carbon Allotrope from Porous GrapheneSupported by the Fundamental Research Funds for the Central Universities, the Project Funded by the Priority Academic Program Development of Jiangsu Higher Education Institutions, and the National Natural Science Foundation of China under Grant No 11204123

Chinese physics letters, 2016-08, Vol.33 (8)

2016

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Using Quantile Regression Approach to Analyze Price Movements of Agricultural Products in China

Journal of Integrative Agriculture, 2012-04, Vol.11 (4), p.674-683

2012

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Fabrication and characterization of La-doped HfO2 gate dielectrics by metal-organic chemical vapor deposition

Applied surface science, 2010-02, Vol.256 (8), p.2496-2499

2010

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Bipolar resistance switching in the fully transparent BaSnO sub(3)-based memory device

Chinese physics B, 2014-08, Vol.23 (8), p.087304-1-087304-6

2014

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Ti x Sb 2 Te Thin Films for Phase Change Memory Applications

Chinese physics letters, 2014-07, Vol.31 (7), p.78503

2014

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Preparation and magnetic properties of L10–FePt/TiO2 nanocomposite thin films

Journal of alloys and compounds, 2012-11, Vol.542, p.128-131

2012

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Ti sub(x)Sb sub(2)Te Thin Films for Phase Change Memory Applications

Chinese physics letters, 2014-07, Vol.31 (7), p.0778503-1-0778503-4

2014

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ZnO nanowire optoelectronic synapse for neuromorphic computing

Synaptic functions and a memristive mechanism on Pt/AlOx/HfOx/TiN bilayer-structure memristors

Preparation and Characterization of Relaxor Ferroelectric 0.65Pb(Mg1/3Nb2/3)O3-0.35PbTiO3 by a Polymerizable Complex Method

Towards an all-in fiber photodetector by directly bonding few-layer molybdenum disulfide to a fiber facet

Impact of Au Nanocrystal Size and Inter-Nanocrystal Distance on the Storage Characteristics of Memory Devices

A Charge-Trap Memory Device with a Composition-Modulated Zr-Silicate High-k Dielectric Multilayer Structure

Fabrication and characterization of La-doped HfO 2 gate dielectrics by metal-organic chemical vapor deposition

Theoretical Study of Carrier Mobility in Two-Dimensional Tetragonal Carbon Allotrope from Porous Graphene

Bipolar resistance switching in the fully transparent BaSnO 3 -based memory device

Bipolar resistance switching in the fully transparent BaSnO3-based memory device

TixSb2Te Thin Films for Phase Change Memory Applications

Fabrication and electrical characteristics of ultrathin (HfO 2) x (SiO 2) 1− x films by surface sol–gel method and reaction-anneal treatment

The Distinguished Charge-Trapping Capability of the Memory Device with Al2O3-Cu2O Composite as the Charge Storage Layer

Strontium-modified lead zirconate titanate thin films for electrically tunable device applications

Synaptic functions and a memristive mechanism on Pt/AlO x /HfO x /TiN bilayer-structure memristors

Systemic Therapy after Radiotherapy Significantly Reduces the Risk of Mortality of Patients with 1-3 Brain Metastases： A Retrospective Study of 250 Patients

Fatigue study of SrBi2Ta2O9 thin films processed in forming gas

Towards an all-in fiber photodetector by directly bonding few-layer molybdenum disulfide to a fiber facetElectronic supplementary information (ESI) available. See DOI: 10.1039/c6nr08436b

Using Quantile Regression Approach to Analyze Price Movements of Agricultural Products in China

Fabrication and characterization of La-doped HfO2 gate dielectrics by metal-organic chemical vapor deposition

Bipolar resistance switching in the fully transparent BaSnO sub(3)-based memory device

Ti x Sb 2 Te Thin Films for Phase Change Memory Applications

Preparation and magnetic properties of L10–FePt/TiO2 nanocomposite thin films

Ti sub(x)Sb sub(2)Te Thin Films for Phase Change Memory Applications

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