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25 Gb/s NRZ transmission at 85°C using a high-speed 940 nm AlGaAs oxide-confined VCSEL grown on a Ge substrate

Optics letters, 2024-02, Vol.49 (3), p.586-589

2024

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The Stability of Exfolicated FeSe Nanosheets During in-air Device Fabrication Processes

IEEE transactions on nanotechnology, 2019, Vol.18, p.37-41

2019

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Interdiffusion in group IV semiconductor material systems: applications, research methods and discoveries

Science bulletin, 2019-10, Vol.64 (19), p.1436-1455

Xia, Guangrui (Maggie)

2019

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Thermal sublimation: a scalable and controllable thinning method for the fabrication of few-layer black phosphorus

Nanotechnology, 2017-07, Vol.28 (28), p.285301-285301

2017

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Thermally induced surface faceting on heteroepitaxial layers

Journal of applied physics, 2023-02, Vol.133 (7)

2023

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Experiments and Modeling of Si-Ge Interdiffusion with Partial Strain Relaxation in Epitaxial SiGe Heterostructures

ECS journal of solid state science and technology, 2014-01, Vol.3 (10), p.P302-P309

2014

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Study of Si-Ge interdiffusion with phosphorus doping

Journal of applied physics, 2016-10, Vol.120 (16), p.165108

2016

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Study of monolithically integrated 940 nm AlGaAs distributed Bragg reflectors on graded GaAsP/bulk Si substrates

Optical materials express, 2023-04, Vol.13 (4), p.1077

2023

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Increasing threshold voltage and reducing leakage of AlGaN/GaN HEMTs using dual-layer SiN x stressors

Semiconductor science and technology, 2020-04, Vol.35 (4), p.45010

2020

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Coupled dopant diffusion and segregation in inhomogeneous SiGe alloys: Experiments and modeling

Journal of applied physics, 2015-06, Vol.117 (21)

2015

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Enhanced Si-Ge interdiffusion in high phosphorus-doped germanium on silicon

Semiconductor science and technology, 2015-10, Vol.30 (10), p.105008

2015

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Si-Ge interdiffusion in strained Si/strained SiGe heterostructures and implications for enhanced mobility metal-oxide-semiconductor field-effect transistors

Journal of applied physics, 2007-02, Vol.101 (4), p.044901-044901-11

2007

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Effects of carbon on phosphorus diffusion in SiGe:C and the implications on phosphorus diffusion mechanisms

Journal of applied physics, 2014-10, Vol.116 (14)

2014

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Hydrogen diffusion in amorphous ZrO2

Journal of non-crystalline solids, 2016-05, Vol.440, p.7-11

2016

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Improved thin film quality and photoluminescence of N-doped epitaxial germanium-on-silicon using MOCVD

Optical materials express, 2020-01, Vol.10 (1), p.1

2020

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Synthesis of large-scale 2-D MoS2 atomic layers by hydrogen-free and promoter-free chemical vapor deposition

Materials letters, 2016-04, Vol.168, p.1-4

2016

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Oxygen-plasma-based digital etching for GaN/AlGaN high electron mobility transistors

2019 IEEE 13th International Conference on ASIC (ASICON), 2019, p.1-4

2019

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Achieving porous germanium from both p- and n-type epitaxial Ge-on-Si via bipolar potentiostatic etching

Electrochimica acta, 2023-12, Vol.470, p.143307, Article 143307

2023

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Fabrication of penetrating pores in epitaxial Ge-on-Si through preferential etching along threading dislocations

Electrochimica acta, 2024-07, Vol.493, p.144416, Article 144416

2024

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Evolution of GeSi islands in epitaxial Ge-on-Si during annealing

Applied surface science, 2024-06, Vol.659, p.159901, Article 159901

2024

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Corrigendum: Design considerations of biaxially tensile-strained germanium-on-silicon lasers (2016 Semiconductor Science and Technology 31 065015)

Semiconductor science and technology, 2016-09, Vol.31 (9), p.99501

2016

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Oxygen-based digital etching of AlGaN/GaN structures with AlN as etch-stop layers

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2019-12, Vol.37 (6)

2019

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Tuning the Optical Anisotropy in Gradient Porous Germanium on Si Substrate

Advanced optical materials, 2024-06

2024

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Design considerations of biaxially tensile-strained germanium-on-silicon lasers

Semiconductor science and technology, 2016-06, Vol.31 (6), p.65015

2016

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Dopant diffusion and segregation, Si-Ge interdiffusion and defect engineering in SiGe devices

2017 47th European Solid-State Device Research Conference (ESSDERC), 2017, p.280-283

Guangrui Xia

2017

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25 Gb/s NRZ transmission at 85°C using a high-speed 940 nm AlGaAs oxide-confined VCSEL grown on a Ge substrate

The Stability of Exfolicated FeSe Nanosheets During in-air Device Fabrication Processes

Interdiffusion in group IV semiconductor material systems: applications, research methods and discoveries

Thermal sublimation: a scalable and controllable thinning method for the fabrication of few-layer black phosphorus

Thermally induced surface faceting on heteroepitaxial layers

Experiments and Modeling of Si-Ge Interdiffusion with Partial Strain Relaxation in Epitaxial SiGe Heterostructures

Study of Si-Ge interdiffusion with phosphorus doping

Study of monolithically integrated 940 nm AlGaAs distributed Bragg reflectors on graded GaAsP/bulk Si substrates

Increasing threshold voltage and reducing leakage of AlGaN/GaN HEMTs using dual-layer SiN x stressors

Coupled dopant diffusion and segregation in inhomogeneous SiGe alloys: Experiments and modeling

Enhanced Si-Ge interdiffusion in high phosphorus-doped germanium on silicon

Si-Ge interdiffusion in strained Si/strained SiGe heterostructures and implications for enhanced mobility metal-oxide-semiconductor field-effect transistors

Effects of carbon on phosphorus diffusion in SiGe:C and the implications on phosphorus diffusion mechanisms

Hydrogen diffusion in amorphous ZrO2

Improved thin film quality and photoluminescence of N-doped epitaxial germanium-on-silicon using MOCVD

Synthesis of large-scale 2-D MoS2 atomic layers by hydrogen-free and promoter-free chemical vapor deposition

Oxygen-plasma-based digital etching for GaN/AlGaN high electron mobility transistors

Achieving porous germanium from both p- and n-type epitaxial Ge-on-Si via bipolar potentiostatic etching

Fabrication of penetrating pores in epitaxial Ge-on-Si through preferential etching along threading dislocations

Evolution of GeSi islands in epitaxial Ge-on-Si during annealing

Corrigendum: Design considerations of biaxially tensile-strained germanium-on-silicon lasers (2016 Semiconductor Science and Technology 31 065015)

Oxygen-based digital etching of AlGaN/GaN structures with AlN as etch-stop layers

Tuning the Optical Anisotropy in Gradient Porous Germanium on Si Substrate

Design considerations of biaxially tensile-strained germanium-on-silicon lasers

Dopant diffusion and segregation, Si-Ge interdiffusion and defect engineering in SiGe devices

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