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Behaviors of beryllium compensation doping in InGaAsP grown by gas source molecular beam epitaxy

AIP advances, 2017-07, Vol.7 (7), p.075117-075117-10

2017

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Extension of REBMIX algorithm to von Mises parametric family for modeling joint distribution of wind speed and direction

Engineering structures, 2019-03, Vol.183, p.1134-1145

2019

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Nearly lattice-matched short-wave infrared InGaAsBi detectors on InP

Applied physics letters, 2016-01, Vol.108 (3)

2016

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Effect of bismuth surfactant on InP-based highly strained InAs/InGaAs triangular quantum wells

Applied physics letters, 2015-11, Vol.107 (21)

2015

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Metamorphic InAs1-xBix/In0.83Al0.17As quantum well structures on InP for mid-infrared emission

Applied physics letters, 2016-09, Vol.109 (12)

2016

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Optimization of InAlAs buffers for growth of GaAs-based high indium content InGaAs photodetectors

Journal of crystal growth, 2015-09, Vol.425, p.346-350

2015

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Analysis of non-stationary wind characteristics at an arch bridge using structural health monitoring data

Journal of civil structural health monitoring, 2017-09, Vol.7 (4), p.573-587

2017

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Dark current characteristics of GaAs-based 2.6 µ m InGaAs photodetectors on different types of InAlAs buffer layers

Journal of physics. D, Applied physics, 2014-02, Vol.47 (8), p.85107

2014

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Effects of well widths and well numbers on InP-based triangular quantum well lasers beyond 2.4 mu m

Journal of crystal growth, 2015-09, Vol.425, p.376-380

2015

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InGaAsP/InP photodetectors targeting on 1.06μm wavelength detection

Infrared physics & technology, 2016-03, Vol.75, p.65-69

2016

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Metamorphic InAs quantum well lasers on InP substrates with different well shapes and waveguides

Journal of crystal growth, 2017-11, Vol.477, p.253-257

2017

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Characteristics of InGaAsBi with various lattice mismatches on InP substrate

AIP advances, 2016-07, Vol.6 (7)

2016

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Stochastic characterization of wind field characteristics of an arch bridge instrumented with structural health monitoring system

Structural safety, 2018-03, Vol.71, p.47-56

2018

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InP-based type-I quantum well lasers up to 2.9 μ m at 230 K in pulsed mode on a metamorphic buffer

Applied physics letters, 2015-03, Vol.106 (12)

2015

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Effects of continuously or step-continuously graded buffer on the performance of wavelength extended InGaAs photodetectors

Journal of crystal growth, 2016-04, Vol.440, p.1-5

2016

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Effects of continuously graded or step-graded InxAl1−xAs buffer on the performance of InP-based In0.83Ga0.17As photodetectors

Journal of crystal growth, 2015-09, Vol.425, p.337-340

2015

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Analysis of dark currents and deep level traps in InP- and GaAs-based In0.83Ga0.17As photodetectors

Journal of crystal growth, 2017-11, Vol.477, p.82-85

2017

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Effects of material parameters on the temperature dependent spectral response of In0.83Ga0.17As photodetectors

Journal of alloys and compounds, 2015-01, Vol.619, p.52-57

2015

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Effects of continuously graded or step-graded In sub(x)Al sub(1-x)As buffer on the performance of InP-based In sub(0.83)Ga sub(0.17)As photodetectors

Journal of crystal growth, 2015-09, Vol.425, p.337-340

2015

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2.25- \mu m Avalanche Photodiodes Using Metamorphic Absorber and Lattice-Matched Multiplier on InP

IEEE photonics technology letters, 2017-01, Vol.29 (1), p.55-58

2017

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Effects of material parameters on the temperature dependent spectral response of In sub(0.83)Ga sub(0.17)As photodetectors

Journal of alloys and compounds, 2015-01, Vol.619, p.52-57

2015

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Dark current characteristics of GaAs-based 2.6 µm InGaAs photodetectors on different types of InAlAs buffer layers

Journal of physics. D, Applied physics, 2014-02, Vol.47 (8)

2014

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Dark current characteristics of GaAs-based 2.6 [mu]m InGaAs photodetectors on different types of InAIAs buffer layers

Journal of physics. D, Applied physics, 2014-02, Vol.47 (8), p.1-4

2014

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Stochastic characterization of wind field characteristics of an arch bridge instrumented with structural health monitoring system

Structural safety, 2017-01, Vol.71, p.47

2017

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Analysis of dark currents and deep level traps in InP- and GaAs-based In^sub 0.83^Ga^sub 0.17^As photodetectors

Journal of crystal growth, 2017-11, Vol.477, p.82

2017

Volltextzugriff (PDF)

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