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1.17 GW/cm² AlN-Based GaN-Channel HEMTs on Mono-Crystalline AlN Substrate

IEEE electron device letters, 2024-06, Vol.45 (6), p.1048-1051

2024

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10 W GaInP/GaAs power HBTs for base station applications

Digest. International Electron Devices Meeting, 2002, p.681-684

2002

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2 MeV ion irradiation effects on AlGaN/GaN HFET devices

Solid-state electronics, 2008-07, Vol.52 (7), p.1011-1017

2008

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2MeV ion irradiation effects on AlGaN/GaN HFET devices

Solid-state electronics, 2008-07, Vol.52 (7), p.1011-1017

2008

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A 3.2 W coplanar single-device X-band amplifier with GaAs HBT

European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005, 2005, p.49-52

2005

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38 GHz push-push GaAs-HBT MMIC oscillator

2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278), 2002, Vol.2, p.839-842 vol.2

2002

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4H-SiC bipolar junction transistor with high current and power density

Solid-state electronics, 2003-02, Vol.47 (2), p.229-231

2003

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Accurate analysis of the size distribution and crystallinity of boron doped Si nanocrystals via Raman and PL spectra

RSC advances, 2017-01, Vol.7 (54), p.34244-3425

2017

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Advances in GaN-based discrete power devices for L- and X-band applications

2006 European Microwave Integrated Circuits Conference, 2006, p.490-492

2006

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Advances in GaN-based discrete power devices for L- and X-band applications

2006 European Microwave Conference, 2006, p.1716-1718

2006

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Adversarial Robustness of MR Image Reconstruction Under Realistic Perturbations

Machine Learning for Medical Image Reconstruction, 2022, Vol.13587, p.24-33

2022

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Aging behaviour of AlGaN/GaN HFETs with advanced ohmic and Schottky contacts

Electronics letters, 2000-05, Vol.36 (11), p.980-981

2000

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Aging behaviour of AlGaN/GaN HFETs with advanced ohmic and Schottky contacts

Electronics letters, 2000-05, Vol.36 (11), p.1-1

2000

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Aging behaviour of AlGaN/GaN HFETs withadvanced ohmic and Schottky contacts

Electronics letters, 2000-05, Vol.36 (11), p.980-981

2000

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AlGaAs/GaAs HBT for high-temperature applications

IEEE transactions on electron devices, 1992-09, Vol.39 (9), p.1977-1981

1992

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AlGaN/GaN HEMT With Integrated Recessed Schottky-Drain Protection Diode

IEEE electron device letters, 2009-09, Vol.30 (9), p.901-903

2009

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AlGaN/GaN HFETs with New Ohmic and Schottky Contacts for Thermal Stability up to 400 °C

Physica status solidi. A, Applied research, 1999-11, Vol.176 (1), p.183-187

1999

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Analysis of Power Dissipation and High Temperature Operation in 4H-SiC Bipolar Junction Transistors with 4.9 MW/cm2 Power Density Handling Ability

Materials science forum, 2004-06, Vol.457-460, p.1121-1124

2004

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Analysis of the Survivability of GaN Low-Noise Amplifiers

IEEE transactions on microwave theory and techniques, 2007-01, Vol.55 (1), p.37-43

2007

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Annealing behaviour of Au/LaB6/Au/Ni/Ge systems on n-GaAs studied by the SNMS technique

Physica status solidi. A, Applied research, 1994-12, Vol.146 (2), p.697-702

1994

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Annealing behaviour of Au/LaB6/Au/Ni/Ge systems on n-GaAs studied by the SNMS technique

Physica status solidi. A, Applied research, 1994-12, Vol.146 (2), p.697-702

1994

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Assessment of the composition of Silicon-Rich Oxide films for photovoltaic applications by optical techniques

Energy procedia, 2011, Vol.10, p.28-32

2011

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Au/Pt/Ti/Pt base contacts to n-InGaP/p+-GaAs for self-passivating HBT ledge structures

Semiconductor science and technology, 2000-08, Vol.15 (8), p.818-822

2000

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Au–Sn solder bumps with tungsten silicide based barrier metallization schemes

Applied physics letters, 1995-10, Vol.67 (16), p.2367-2369

1995

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Boron Implant Isolation For High Temperature GaAs Integrated Circuits

Journal of the Electrochemical Society, 1992-05, Vol.139 (5), p.1470-1472

1992

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1.17 GW/cm² AlN-Based GaN-Channel HEMTs on Mono-Crystalline AlN Substrate

10 W GaInP/GaAs power HBTs for base station applications

2 MeV ion irradiation effects on AlGaN/GaN HFET devices

2MeV ion irradiation effects on AlGaN/GaN HFET devices

A 3.2 W coplanar single-device X-band amplifier with GaAs HBT

38 GHz push-push GaAs-HBT MMIC oscillator

4H-SiC bipolar junction transistor with high current and power density

Accurate analysis of the size distribution and crystallinity of boron doped Si nanocrystals via Raman and PL spectra

Advances in GaN-based discrete power devices for L- and X-band applications

Advances in GaN-based discrete power devices for L- and X-band applications

Adversarial Robustness of MR Image Reconstruction Under Realistic Perturbations

Aging behaviour of AlGaN/GaN HFETs with advanced ohmic and Schottky contacts

Aging behaviour of AlGaN/GaN HFETs with advanced ohmic and Schottky contacts

Aging behaviour of AlGaN/GaN HFETs withadvanced ohmic and Schottky contacts

AlGaAs/GaAs HBT for high-temperature applications

AlGaN/GaN HEMT With Integrated Recessed Schottky-Drain Protection Diode

AlGaN/GaN HFETs with New Ohmic and Schottky Contacts for Thermal Stability up to 400 °C

Analysis of Power Dissipation and High Temperature Operation in 4H-SiC Bipolar Junction Transistors with 4.9 MW/cm2 Power Density Handling Ability

Analysis of the Survivability of GaN Low-Noise Amplifiers

Annealing behaviour of Au/LaB6/Au/Ni/Ge systems on n-GaAs studied by the SNMS technique

Annealing behaviour of Au/LaB6/Au/Ni/Ge systems on n-GaAs studied by the SNMS technique

Assessment of the composition of Silicon-Rich Oxide films for photovoltaic applications by optical techniques

Au/Pt/Ti/Pt base contacts to n-InGaP/p+-GaAs for self-passivating HBT ledge structures

Au–Sn solder bumps with tungsten silicide based barrier metallization schemes

Boron Implant Isolation For High Temperature GaAs Integrated Circuits

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