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Gate Reliability Investigation in Normally-Off p-Type-GaN Cap/AlGaN/GaN HEMTs Under Forward Bias Stress

IEEE electron device letters, 2016-04, Vol.37 (4), p.385-388

2016

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Optimization of Vertical GaN Drift Region Layers for Avalanche and Punch-Through pn-Diodes

IEEE electron device letters, 2023-03, Vol.44 (3), p.1-1

2023

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IEEE_Xplore

1.17 GW/cm² AlN-Based GaN-Channel HEMTs on Mono-Crystalline AlN Substrate

IEEE electron device letters, 2024-06, Vol.45 (6), p.1048-1051

2024

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IEEE_Xplore

Punchthrough-Voltage Enhancement of AlGaN/GaN HEMTs Using AlGaN Double-Heterojunction Confinement

IEEE transactions on electron devices, 2008-12, Vol.55 (12), p.3354-3359

2008

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IEEE_Xplore

Analysis of the Survivability of GaN Low-Noise Amplifiers

IEEE transactions on microwave theory and techniques, 2007-01, Vol.55 (1), p.37-43

2007

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IEEE_Xplore

Effect of External Mechanical Stress on DC Performance and Reliability of Integrated E/D GaN HEMTs

IEEE transactions on semiconductor manufacturing, 2018-11, Vol.31 (4), p.419-425

2018

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IEEE_Xplore

Normally-off AlGaN/GaN HFET with p-type GaN Gate and AlGaN buffer

2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2010, p.347-350

2010

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IEEE_Xplore

Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers

IEEE electron device letters, 2009-02, Vol.30 (2), p.103-106

2009

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IEEE_Xplore

AlGaN/GaN HEMT With Integrated Recessed Schottky-Drain Protection Diode

IEEE electron device letters, 2009-09, Vol.30 (9), p.901-903

2009

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IEEE_Xplore

Improving the Linearity of GaN HEMTs by Optimizing Epitaxial Structure

IEEE transactions on electron devices, 2009-03, Vol.56 (3), p.361-364

2009

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IEEE_Xplore

Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors

Applied physics letters, 2015-11, Vol.107 (19)

2015

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Highly Rugged 30 GHz GaN Low-Noise Amplifiers

IEEE microwave and wireless components letters, 2009-04, Vol.19 (4), p.251-253

2009

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IEEE_Xplore

Fast-Switching GaN-Based Lateral Power Schottky Barrier Diodes With Low Onset Voltage and Strong Reverse Blocking

IEEE electron device letters, 2012-03, Vol.33 (3), p.357-359

2012

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IEEE_Xplore

Influence of the device geometry on the Schottky gate characteristics of AlGaN/GaN HEMTs

Semiconductor science and technology, 2010-07, Vol.25 (7), p.075005-075005

2010

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Low-resistive gate module for RF GaN-HFETs by electroplating

Semiconductor science and technology, 2024-02, Vol.39 (2), p.25007

2024

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Electrical and EDX-analysis of CF4 and Ar plasma treated AlGaN/GaN HEMTs

Physica status solidi. C, 2011-07, Vol.8 (7-8), p.2207-2209

2011

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Proton and Heavy Ion Irradiation Effects on AlGaN/GaN HFET Devices

IEEE transactions on nuclear science, 2006-12, Vol.53 (6), p.3661-3666

2006

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IEEE_Xplore

High gain ultraviolet photodetectors based on AlGaN/GaN heterostructures for optical switching

Applied physics letters, 2011-05, Vol.98 (21), p.211114-211114-3

2011

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Laser-assisted processing of VIAs for AlGaN/GaN HEMTs on SiC substrates

IEEE electron device letters, 2006-06, Vol.27 (6), p.425-427

2006

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IEEE_Xplore

Dispersion effects in on-state resistance of lateral Ga2O3 MOSFETs at 300 V switching

Electronics letters, 2020-08, Vol.56 (16), p.838-840

2020

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Switch-mode amplifier ICs with over 90% efficiency for Class-S PAs using GaAs-HBTs and GaN-HEMTs

2008 IEEE MTT-S International Microwave Symposium Digest, 2008, p.751-754

2008

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IEEE_Xplore

Vertical GaN MISFET for chip-on-chip high speed laser driving applications

Electronics letters, 2020-09, Vol.56 (20), p.1084-1086

2020

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Normally-off high-voltage p-GaN gate GaN HFET with carbon-doped buffer

2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs, 2011, p.239-242

2011

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IEEE_Xplore

Off-state breakdown and dispersion optimization in AlGaN/GaN heterojunction field-effect transistors utilizing carbon doped buffer

Applied physics letters, 2012-05, Vol.100 (22), p.223502-223502-3

2012

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38 GHz push-push GaAs-HBT MMIC oscillator

2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278), 2002, Vol.2, p.839-842 vol.2

2002

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IEEE_Xplore

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Gate Reliability Investigation in Normally-Off p-Type-GaN Cap/AlGaN/GaN HEMTs Under Forward Bias Stress

Optimization of Vertical GaN Drift Region Layers for Avalanche and Punch-Through pn-Diodes

1.17 GW/cm² AlN-Based GaN-Channel HEMTs on Mono-Crystalline AlN Substrate

Punchthrough-Voltage Enhancement of AlGaN/GaN HEMTs Using AlGaN Double-Heterojunction Confinement

Analysis of the Survivability of GaN Low-Noise Amplifiers

Effect of External Mechanical Stress on DC Performance and Reliability of Integrated E/D GaN HEMTs

Normally-off AlGaN/GaN HFET with p-type GaN Gate and AlGaN buffer

Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers

AlGaN/GaN HEMT With Integrated Recessed Schottky-Drain Protection Diode

Improving the Linearity of GaN HEMTs by Optimizing Epitaxial Structure

Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors

Highly Rugged 30 GHz GaN Low-Noise Amplifiers

Fast-Switching GaN-Based Lateral Power Schottky Barrier Diodes With Low Onset Voltage and Strong Reverse Blocking

Influence of the device geometry on the Schottky gate characteristics of AlGaN/GaN HEMTs

Low-resistive gate module for RF GaN-HFETs by electroplating

Electrical and EDX-analysis of CF4 and Ar plasma treated AlGaN/GaN HEMTs

Proton and Heavy Ion Irradiation Effects on AlGaN/GaN HFET Devices

High gain ultraviolet photodetectors based on AlGaN/GaN heterostructures for optical switching

Laser-assisted processing of VIAs for AlGaN/GaN HEMTs on SiC substrates

Dispersion effects in on-state resistance of lateral Ga2O3 MOSFETs at 300 V switching

Switch-mode amplifier ICs with over 90% efficiency for Class-S PAs using GaAs-HBTs and GaN-HEMTs

Vertical GaN MISFET for chip-on-chip high speed laser driving applications

Normally-off high-voltage p-GaN gate GaN HFET with carbon-doped buffer

Off-state breakdown and dispersion optimization in AlGaN/GaN heterojunction field-effect transistors utilizing carbon doped buffer

38 GHz push-push GaAs-HBT MMIC oscillator

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