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High Speed and Large Memory Window Ferroelectric HfZrO₂ FinFET for High-Density Nonvolatile Memory

IEEE electron device letters, 2021-09, Vol.42 (9), p.1307-1310

2021

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Soft-Switching Bidirectional Isolated Full-Bridge Converter With Active and Passive Snubbers

IEEE transactions on industrial electronics (1982), 2014-03, Vol.61 (3), p.1368-1376

2014

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Analysis of Ge-Si Heterojunction Nanowire Tunnel FET: Impact of Tunneling Window of Band-to-Band Tunneling Model

Journal of the Electrochemical Society, 2017, Vol.164 (11), p.E3354-E3358

2017

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Uncovering the flocculating and dye recovery potential of pH‐responsive bioflocculant produced by Bacillus thuringiensis

Environmental progress, 2024-01, Vol.43 (1), p.n/a

2024

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A comprehensive study on flocculation of anionic dyes using the bioflocculant produced by Bacillus thuringiensis: Kinetics, affecting factors, and perspectives

Water environment research, 2023-05, Vol.95 (5), p.e10868-n/a

2023

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Device and Circuit Performance Estimation of Junctionless Bulk FinFETs

IEEE transactions on electron devices, 2013-06, Vol.60 (6), p.1807-1813

2013

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Self-induced ferroelectric 2-nm-thick Ge-doped HfO2 thin film applied to Ge nanowire ferroelectric gate-all-around field-effect transistor

Applied physics letters, 2020-12, Vol.117 (26)

2020

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3D TCAD Simulation for CMOS Nanoeletronic Devices

1, 2017

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Performance Comparison Between Bulk and SOI Junctionless Transistors

IEEE electron device letters, 2013-02, Vol.34 (2), p.169-171

2013

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High-Performance Stacked Double-Layer N-Channel Poly-Si Nanosheet Multigate Thin-Film Transistors

IEEE electron device letters, 2017-09, Vol.38 (9), p.1256-1258

2017

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Atomic-Level Analysis of Sub-5-nm-Thick Hf0.5Zr0.5O2 and Characterization of Nearly Hysteresis-Free Ferroelectric FinFET

IEEE electron device letters, 2019-08, Vol.40 (8), p.1233-1236

2019

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Performance Evaluation of Silicon and Germanium Ultrathin Body (1 nm) Junctionless Field-Effect Transistor With Ultrashort Gate Length (1 nm and 3 nm)

IEEE electron device letters, 2015-07, Vol.36 (7), p.654-656

2015

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Gate-all-around junctionless silicon transistors with atomically thin nanosheet channel (0.65 nm) and record sub-threshold slope (43 mV/dec)

Applied physics letters, 2017-01, Vol.110 (3)

2017

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Tightly Stacked 3D Diamond-Shaped Ge Nanowire Gate-All-Around FETs With Superior nFET and pFET Performance

IEEE electron device letters, 2021-12, Vol.42 (12), p.1727-1730

2021

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Performance of Junctionless and Inversion-Mode Thin-Film Transistors With Stacked Nanosheet Channels

IEEE transactions on nanotechnology, 2020, Vol.19, p.84-88

2020

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Performance Enhancement of Nanowire Tunnel Field-Effect Transistor With Asymmetry-Gate Based on Different Screening Length

IEEE electron device letters, 2013-12, Vol.34 (12), p.1482-1484

2013

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Polyethylene Glycol6000/carbon Nanodots as Fluorescent Bioimaging Agents

Nanomaterials (Basel, Switzerland), 2020-04, Vol.10 (4), p.677

2020

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Trench FinFET Nanostructure with Advanced Ferroelectric Nanomaterial HfZrO2 for Sub-60-mV/Decade Subthreshold Slope for Low Power Application

Nanomaterials (Basel, Switzerland), 2022-06, Vol.12 (13), p.2165

2022

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Characterizing the Electrical Properties of a Novel Junctionless Poly-Si Ultrathin-Body Field-Effect Transistor Using a Trench Structure

IEEE electron device letters, 2015-02, Vol.36 (2), p.150-152

2015

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Fabrication and Characterization of Stacked Poly-Si Nanosheet With Gate-All-Around and Multi-Gate Junctionless Field Effect Transistors

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.1133-1139

2019

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3-D Self-Aligned Stacked Ge Nanowire pGAAFET on Si nFinFET of Single Gate CFET

IEEE journal of the Electron Devices Society, 2023-01, Vol.11, p.1-1

2023

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Ultra Thin Poly-Si Nanosheet Junctionless Field-Effect Transistor with Nickel Silicide Contact

Materials, 2017-11, Vol.10 (11), p.1276

2017

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Twin Thin-Film Transistor Nonvolatile Memory With an Indium-Gallium-Zinc-Oxide Floating Gate

IEEE electron device letters, 2013-01, Vol.34 (1), p.75-77

2013

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Investigation of SiGe/Si Bilayer Inverted-T Channel Gate-All-Around Field-Effect-Transistor With Self-Induced Ferroelectric Ge Doped HfO

IEEE journal of the Electron Devices Society, 2022, Vol.10, p.408-412

2022

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Evaluating the Flocculation and Dye Recovery Potential of Cationic Dye Basic Blue 41 Using a Natural Flocculant Derived from Colletotrichum gloeosporioides

Water, air, and soil pollution, 2024-06, Vol.235 (6), p.346, Article 346

2024

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High Speed and Large Memory Window Ferroelectric HfZrO₂ FinFET for High-Density Nonvolatile Memory

Soft-Switching Bidirectional Isolated Full-Bridge Converter With Active and Passive Snubbers

Analysis of Ge-Si Heterojunction Nanowire Tunnel FET: Impact of Tunneling Window of Band-to-Band Tunneling Model

Uncovering the flocculating and dye recovery potential of pH‐responsive bioflocculant produced by Bacillus thuringiensis

A comprehensive study on flocculation of anionic dyes using the bioflocculant produced by Bacillus thuringiensis: Kinetics, affecting factors, and perspectives

Device and Circuit Performance Estimation of Junctionless Bulk FinFETs

Self-induced ferroelectric 2-nm-thick Ge-doped HfO2 thin film applied to Ge nanowire ferroelectric gate-all-around field-effect transistor

3D TCAD Simulation for CMOS Nanoeletronic Devices

Performance Comparison Between Bulk and SOI Junctionless Transistors

High-Performance Stacked Double-Layer N-Channel Poly-Si Nanosheet Multigate Thin-Film Transistors

Atomic-Level Analysis of Sub-5-nm-Thick Hf0.5Zr0.5O2 and Characterization of Nearly Hysteresis-Free Ferroelectric FinFET

Performance Evaluation of Silicon and Germanium Ultrathin Body (1 nm) Junctionless Field-Effect Transistor With Ultrashort Gate Length (1 nm and 3 nm)

Gate-all-around junctionless silicon transistors with atomically thin nanosheet channel (0.65 nm) and record sub-threshold slope (43 mV/dec)

Tightly Stacked 3D Diamond-Shaped Ge Nanowire Gate-All-Around FETs With Superior nFET and pFET Performance

Performance of Junctionless and Inversion-Mode Thin-Film Transistors With Stacked Nanosheet Channels

Performance Enhancement of Nanowire Tunnel Field-Effect Transistor With Asymmetry-Gate Based on Different Screening Length

Polyethylene Glycol6000/carbon Nanodots as Fluorescent Bioimaging Agents

Trench FinFET Nanostructure with Advanced Ferroelectric Nanomaterial HfZrO2 for Sub-60-mV/Decade Subthreshold Slope for Low Power Application

Characterizing the Electrical Properties of a Novel Junctionless Poly-Si Ultrathin-Body Field-Effect Transistor Using a Trench Structure

Fabrication and Characterization of Stacked Poly-Si Nanosheet With Gate-All-Around and Multi-Gate Junctionless Field Effect Transistors

3-D Self-Aligned Stacked Ge Nanowire pGAAFET on Si nFinFET of Single Gate CFET

Ultra Thin Poly-Si Nanosheet Junctionless Field-Effect Transistor with Nickel Silicide Contact

Twin Thin-Film Transistor Nonvolatile Memory With an Indium-Gallium-Zinc-Oxide Floating Gate

Investigation of SiGe/Si Bilayer Inverted-T Channel Gate-All-Around Field-Effect-Transistor With Self-Induced Ferroelectric Ge Doped HfO

Evaluating the Flocculation and Dye Recovery Potential of Cationic Dye Basic Blue 41 Using a Natural Flocculant Derived from Colletotrichum gloeosporioides

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