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The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior

Journal of applied physics, 2014-09, Vol.116 (11)

2014

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Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy

Journal of applied physics, 2015-05, Vol.117 (18)

2015

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Giant gauge factor of Van der Waals material based strain sensors

Nature communications, 2021-04, Vol.12 (1), p.2018-9, Article 2018

2021

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Study on the effect of size on InGaN red micro-LEDs

Scientific reports, 2022-01, Vol.12 (1), p.1324-1324, Article 1324

2022

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Micromagnetic simulations for deterministic switching in SOT-MRAM cell with additional heavy metal capping strip

Applied physics letters, 2023-04, Vol.122 (14)

2023

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High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy

Journal of applied physics, 2014-05, Vol.115 (19)

2014

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Localization landscape theory of disorder in semiconductors. II. Urbach tails of disordered quantum well layers

Physical review. B, 2017-04, Vol.95 (14), p.144205, Article 144205

2017

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Study on the Current Spreading Effect and Light Extraction Enhancement of Vertical GaN/InGaN LEDs

IEEE transactions on electron devices, 2012-02, Vol.59 (2), p.400-407

2012

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Origins of the high-energy electroluminescence peaks in long-wavelength (∼495–685 nm) InGaN light-emitting diodes

Applied physics letters, 2023-08, Vol.123 (9)

2023

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A 3D simulation comparison of carrier transport in green and blue c-plane multi-quantum well nitride light emitting diodes

Journal of applied physics, 2020-12, Vol.128 (23)

2020

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Impact of Gate Metal on the Performance of p-GaN/AlGaN/GaN High Electron Mobility Transistors

IEEE electron device letters, 2015-03, Vol.36 (3), p.232-234

2015

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Efficient and Bright Organic Radical Light‐Emitting Diodes with Low Efficiency Roll‐Off

Advanced materials (Weinheim), 2023-11, Vol.35 (45), p.e2303666-n/a

2023

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Interwell carrier transport in InGaN/(In)GaN multiple quantum wells

Applied physics letters, 2019-04, Vol.114 (15)

2019

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Defect-assisted hole transport through transition metal oxide-based injection layers for passivated nanocrystalline CsPbBr3 emissive thin films: A combined experimental and modeling study

Journal of applied physics, 2024-02, Vol.135 (5)

2024

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Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure

Applied physics letters, 2012-08, Vol.101 (8), p.83505

2012

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Application of localization landscape theory and the k · p model for direct modeling of carrier transport in a type II superlattice InAs/InAsSb photoconductor system

Journal of applied physics, 2020-01, Vol.127 (3)

2020

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A design of intermediate band solar cell for photon ratchet with multi-layer MoS2 nanoribbons

Applied physics letters, 2017-05, Vol.110 (20)

2017

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Localization landscape theory of disorder in semiconductors. I. Theory and modeling

Physical review. B, 2017-04, Vol.95 (14), p.144204, Article 144204

2017

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AlGaN-based deep ultraviolet light emitting diodes with magnesium delta-doped AlGaN last barrier

Applied physics letters, 2020-12, Vol.117 (25)

2020

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3D Self‐Consistent Quantum Transport Simulation for GaAs Gate‐All‐Around Nanowire Field‐Effect Transistor with Elastic and Inelastic Scattering Effects

Physica status solidi. A, Applications and materials science, 2019-01, Vol.216 (1), p.1800524-n/a

2019

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Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes

Physical review. B, 2017-04, Vol.95 (14), p.144206, Article 144206

2017

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Disorder effects in nitride semiconductors: impact on fundamental and device properties

Nanophotonics (Berlin, Germany), 2020-11, Vol.10 (1), p.3-21

2020

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Electronic properties of MoS2 nanoribbon with strain using tight‐binding method

physica status solidi (b), 2017-02, Vol.254 (2), p.n/a

2017

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Hole mobility behavior in Al-gradient polarization-induced p-type AlGaN grown on GaN template

Applied physics letters, 2022-01, Vol.120 (2)

2022

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Study of polarization properties of light emitted from a -plane InGaN/GaN quantum well-based light emitting diodes

Journal of applied physics, 2009-07, Vol.106 (2), p.023106-023106-6

2009

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The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior

Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy

Giant gauge factor of Van der Waals material based strain sensors

Study on the effect of size on InGaN red micro-LEDs

Micromagnetic simulations for deterministic switching in SOT-MRAM cell with additional heavy metal capping strip

High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy

Localization landscape theory of disorder in semiconductors. II. Urbach tails of disordered quantum well layers

Study on the Current Spreading Effect and Light Extraction Enhancement of Vertical GaN/InGaN LEDs

Origins of the high-energy electroluminescence peaks in long-wavelength (∼495–685 nm) InGaN light-emitting diodes

A 3D simulation comparison of carrier transport in green and blue c-plane multi-quantum well nitride light emitting diodes

Impact of Gate Metal on the Performance of p-GaN/AlGaN/GaN High Electron Mobility Transistors

Efficient and Bright Organic Radical Light‐Emitting Diodes with Low Efficiency Roll‐Off

Interwell carrier transport in InGaN/(In)GaN multiple quantum wells

Defect-assisted hole transport through transition metal oxide-based injection layers for passivated nanocrystalline CsPbBr3 emissive thin films: A combined experimental and modeling study

Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure

Application of localization landscape theory and the k · p model for direct modeling of carrier transport in a type II superlattice InAs/InAsSb photoconductor system

A design of intermediate band solar cell for photon ratchet with multi-layer MoS2 nanoribbons

Localization landscape theory of disorder in semiconductors. I. Theory and modeling

AlGaN-based deep ultraviolet light emitting diodes with magnesium delta-doped AlGaN last barrier

3D Self‐Consistent Quantum Transport Simulation for GaAs Gate‐All‐Around Nanowire Field‐Effect Transistor with Elastic and Inelastic Scattering Effects

Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes

Disorder effects in nitride semiconductors: impact on fundamental and device properties

Electronic properties of MoS2 nanoribbon with strain using tight‐binding method

Hole mobility behavior in Al-gradient polarization-induced p-type AlGaN grown on GaN template

Study of polarization properties of light emitted from a -plane InGaN/GaN quantum well-based light emitting diodes

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