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Low Dark Current InGaAs(P)/InP p–i–n Photodiodes

Japanese Journal of Applied Physics, 2003, Vol.42 (Part 1, No. 7A), p.4249-4252

2003

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Investigation of the electron transfer characteristics in multi-δ-doped GaAs FET's

IEEE transactions on electron devices, 1996-08, Vol.43 (8), p.1181-1186

1996

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InAlAs/InGaAs doped channel heterostructure for high-linearity, high-temperature and high-breakdown operations

Solid-state electronics, 2005-02, Vol.49 (2), p.163-166

2005

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Enhanced Two-Dimensional Electron Gas Concentrations and Mobilities in Multiple δ-DopedGaAs/In 0.25 Ga 0.75 As/GaAs Pseudomorphic Heterostructures

Japanese Journal of Applied Physics, 1994-04, Vol.33 (4R), p.1778

1994

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Investigation of InGaP/GaAs heterojunction bipolar transistor with doping graded base

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2003-11, Vol.21 (6), p.2555-2557

2003

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Comparative study of In0.52Al0.48As/InxGa1−xAs/InP high-electron-mobility transistors with a symmetrically graded and an inversely graded channel

Semiconductor science and technology, 2006-06, Vol.21 (6), p.781-785

2006

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Characteristics of In0.52Al0.48As/InxGa1−xAsyP1−y/In0.52Al0.48As high electron-mobility transistors

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2004-05, Vol.22 (3), p.1044-1047

2004

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Characteristics of In0.52Al0.48As/InxGa1−xAs HEMT’s with various InxGa1−xAs channels

Solid-state electronics, 2004-01, Vol.48 (1), p.119-124

2004

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Comparative study of In 0.52 Al 0.48 As/In x Ga 1− x As/InP high-electron-mobility transistors with a symmetrically graded and an inversely graded channel

Semiconductor science and technology, 2006-06, Vol.21 (6), p.781-785

2006

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Characteristics of In 0.52Al 0.48As/In xGa 1− xAs HEMT’s with various In xGa 1− xAs channels

Solid-state electronics, 2004, Vol.48 (1), p.119-124

2004

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Clinical Analysis of Primary Nephrotic Syndrome Complicated by Plastic Bronchitis in Children

Klinische Pädiatrie, 2021-03, Vol.233 (2), p.63-68

2021

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Investigation of the electron transfer characteristics in multi-/spl delta/-doped GaAs FET's

IEEE transactions on electron devices, 1996-08, Vol.43 (8), p.1181-1186

1996

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Investigation of the electron transfer characteristics inmulti-delta -doped GaAs FET' s

IEEE transactions on electron devices, 1996-08, Vol.43 (8), p.1181-1186

1996

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Enhanced two-dimensional electron gas concentrations and mobilities in multiple δ-doped GaAs/In0.25Ga0.75As/GaAs pseudomorphic heterostructures

Japanese journal of applied physics, 1994, Vol.33 (4A), p.1778-1780

1994

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Enhancement-mode In 0.52 Al 0.48 As/In 0.6 Ga 0.4 As tunneling real space transfer high electron mobility transistor

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2004-05, Vol.22 (3), p.974-976

2004

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Characteristics of In 0.52 Al 0.48 As/In x Ga 1−x As y P 1−y / In 0.52 Al 0.48 As high electron-mobility transistors

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2004-05, Vol.22 (3), p.1044-1047

2004

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Enhancement-mode In0.52Al0.48As/In0.6Ga0.4As tunneling real space transfer high electron mobility transistor

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2004-05, Vol.22 (3), p.974-976

2004

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Low Dark Current InGaAs(P)/InP p–i–n Photodiodes

Investigation of the electron transfer characteristics in multi-δ-doped GaAs FET's

InAlAs/InGaAs doped channel heterostructure for high-linearity, high-temperature and high-breakdown operations

Enhanced Two-Dimensional Electron Gas Concentrations and Mobilities in Multiple δ-DopedGaAs/In 0.25 Ga 0.75 As/GaAs Pseudomorphic Heterostructures

Investigation of InGaP/GaAs heterojunction bipolar transistor with doping graded base

Comparative study of In0.52Al0.48As/InxGa1−xAs/InP high-electron-mobility transistors with a symmetrically graded and an inversely graded channel

Characteristics of In0.52Al0.48As/InxGa1−xAsyP1−y/In0.52Al0.48As high electron-mobility transistors

Characteristics of In0.52Al0.48As/InxGa1−xAs HEMT’s with various InxGa1−xAs channels

Comparative study of In 0.52 Al 0.48 As/In x Ga 1− x As/InP high-electron-mobility transistors with a symmetrically graded and an inversely graded channel

Characteristics of In 0.52Al 0.48As/In xGa 1− xAs HEMT’s with various In xGa 1− xAs channels

Clinical Analysis of Primary Nephrotic Syndrome Complicated by Plastic Bronchitis in Children

Investigation of the electron transfer characteristics in multi-/spl delta/-doped GaAs FET's

Investigation of the electron transfer characteristics inmulti-delta -doped GaAs FET' s

Enhanced two-dimensional electron gas concentrations and mobilities in multiple δ-doped GaAs/In0.25Ga0.75As/GaAs pseudomorphic heterostructures

Enhancement-mode In 0.52 Al 0.48 As/In 0.6 Ga 0.4 As tunneling real space transfer high electron mobility transistor

Characteristics of In 0.52 Al 0.48 As/In x Ga 1−x As y P 1−y / In 0.52 Al 0.48 As high electron-mobility transistors

Enhancement-mode In0.52Al0.48As/In0.6Ga0.4As tunneling real space transfer high electron mobility transistor

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